Develop a carrier control method for diamond using heterojunction doping technique

• Project/Area Number: 20H00313
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Review Section: Medium-sized Section 26:Materials engineering and related fields
• Research Institution: National Institute for Materials Science
• Principal Investigator: 小出 康夫 国立研究開発法人物質・材料研究機構, 電子・光機能材料研究センター, 特命研究員 (70195650)
• Co-Investigator(Kenkyū-buntansha): 劉 江偉 国立研究開発法人物質・材料研究機構, 電子・光機能材料研究センター, 主幹研究員 (30732119) ; 廖 梅勇 国立研究開発法人物質・材料研究機構, 電子・光機能材料研究センター, 主席研究員 (70528950) ; 井村 将隆 国立研究開発法人物質・材料研究機構, 電子・光機能材料研究センター, 主幹研究員 (80465971)
• Project Period (FY): 2020-04-01 – 2024-03-31
• Project Status: Completed (Fiscal Year 2023)
• Budget Amount: ¥44,850,000 (Direct Cost: ¥34,500,000、Indirect Cost: ¥10,350,000); Fiscal Year 2023: ¥7,150,000 (Direct Cost: ¥5,500,000、Indirect Cost: ¥1,650,000); Fiscal Year 2022: ¥7,150,000 (Direct Cost: ¥5,500,000、Indirect Cost: ¥1,650,000); Fiscal Year 2021: ¥15,600,000 (Direct Cost: ¥12,000,000、Indirect Cost: ¥3,600,000); Fiscal Year 2020: ¥14,950,000 (Direct Cost: ¥11,500,000、Indirect Cost: ¥3,450,000)
• Keywords: ダイヤモンド / III族窒化物 / ヘテロ接合 / ナノラミネート構造 / トランジスタ / ヘテロ構造

Outline of Research at the Start

ダイヤモンドは半導体材料の中で最も熱的・化学的に安定な究極の半導体材料であり、高温・極限環境における電子デバイスとして期待される。しかしながら、ドーパントのイオン化エネルギーが大きく、室温での高キャリア濃度を確保できない欠点がある。本申請においては、その欠点を解決する原理手法として、ヘテロ（異種）接合窒化アルミニウム（AlN）からのキャリアドーピング、およびナノラミネート酸化物薄膜の巨大誘電率効果を利用して、高濃度キャリアを確保・制御する原理の実証とともに電界効果トランジスタを作製し、デバイスの熱安定性を確保することを目的とする。

Outline of Annual Research Achievements

本基盤研究(A)の目的は、ダイヤモンドにおける室温での高キャリア濃度を確保できない欠点を解決する原理手法として、(1)ヘテロ（異種）接合窒化アルミニウム（AlN）からのキャリアドーピング、および(2)ナノラミネート酸化物薄膜の巨大誘電率効果を利用して、高濃度キャリアを確保・制御する原理の実証とともに電界効果トランジスタを作製することにある。2023年最終年度は、昨年度計画した点を踏まえ、開発および確立した手法を用いて以下の通り進めた結果、研究実績は以下の通りまとめられる。
(1)有機金属化合物気相成長(MOVPE法)によるMgドープAlNの酸素終端ダイヤモンド基板上への成長は、1100℃程度で進めたがダイヤ界面近傍に発生する高密度転位が影響してダイヤモンド側への十分な正孔発生は得られなかった。引き続きMOVPE成長条件を検討するともに転位密度減少方策含め検討を継続する予定である。
(2)他の方法として、ダイヤモンド/MgドープAlN作製のために、原子層堆積法及びスパッタリング法を用いて、ダイヤモンドエピ基板上にAlN/MgO/AlNの3層構造を作製し、800℃以上の熱処理からMgドープAlN(O)の作製を試みた。その結果、800℃の熱処理ではAlN/MgO/AlN構造は絶縁性であり、1200及び1400℃の熱処理後に10kOhm/sqの導電性に変化した。
(3)熱処理AlN/MgO/AlN構造をゲート構造及びTiAuをソース、ゲート、及びドレイン金属電極とした電界効果トランジスタを作製した。結果としてダイヤモンド側への正孔発生は確認できずトランジスタ動作の実証はできなかった。ダイヤモンド上へのアクセプタとして振る舞うMgを添加したAlN層を作製する手法の探索は今後も進める予定である。
(2)昨年度詳細に調べた原子層堆積（ALD）法を用いたTiOx[x nm]／AlOy[y nm]（x,y < 1nm）ナノラミネート膜を用いてダイヤモンドFETおよびキャパシタを作製し、トランジスタ特性の高性能化を進めた。

Research Progress Status

令和5年度が最終年度であるため、記入しない。

Strategy for Future Research Activity

令和5年度が最終年度であるため、記入しない。

Research Products

• [Int'l Joint Research] O. Auchiello, and E.D. Obaldia/Department of MSE/University of Texas, Dallas(米国)
• [Journal Article] Electrical property improvement for boron-doped diamond metal-oxide-semiconductor field-effect transistors (2024)
  • Author(s): Liu Jiangwei、Teraji Tokuyuki、Da Bo、Koide Yasuo
  • Journal Title: Applied Physics Letters Volume: 124 Issue: 7 Pages: 072103-072103
  • DOI: 10.1063/5.0194424
  • Peer Reviewed
• [Journal Article] Suppression of High Threshold Voltage for Boron-Doped Diamond MOSFETs (2024)
  • Author(s): Liu Jiangwei、Teraji Tokuyuki、Da Bo、Koide Yasuo
  • Journal Title: IEEE Transactions on Electron Devices Volume: 71 Issue: 3 Pages: 1764-1768
  • DOI: 10.1109/ted.2024.3356468
  • Peer Reviewed / Open Access
• [Journal Article] Experimental Formation and Mechanism Study for Super-High Dielectric Constant AlOx/TiOy Nanolaminates (2023)
  • Author(s): J. W. Liu, M. Okamura, H. Mashiko, M. Imura, M.Y. Liao, R. Kikuchi, M. Suzuka, Y. Koide
  • Journal Title: Nanomaterials Volume: 13 Issue: 7 Pages: 1256-1256
  • DOI: 10.3390/nano13071256
  • Peer Reviewed / Open Access
• [Journal Article] Low-Resistance Ohmic Contact Materials for p-GaN Based on Metallurgy (2023)
  • Author(s): Y. Koide
  • Journal Title: COJ Technical & Scientific Research Volume: 4 Pages: 000585-000585
  • Peer Reviewed / Open Access
• [Journal Article] Electrical Properties of Boron-Doped Diamond MOSFETs With Ozone as Oxygen Precursor for Al2O3 Deposition (2023)
  • Author(s): J.W. Liu, T. Teraji、D. Bo, Y. Koide
  • Journal Title: IEEE Transactions on Electron Devices Volume: 70 Issue: 5 Pages: 2199-2203
  • DOI: 10.1109/ted.2023.3256349
  • Peer Reviewed / Open Access
• [Journal Article] Improvement of structural quality of AlN layers grown on c-plane sapphire substrate by metal organic vapor phase epitaxy using post-growth annealing with trimethylgallium (2022)
  • Author(s): Imura Masataka、Inaba Hideki、Mano Takaaki、Ishida Nobuyuki、Uesugi Fumihiko、Kuroda Yoko、Nakayama Yoshiko、Takeguchi Masaki、Koide Yasuo
  • Journal Title: AIP Advances Volume: 12 Issue: 1 Pages: 015203-015203
  • DOI: 10.1063/5.0076706
  • Peer Reviewed / Open Access
• [Journal Article] Investigation of Ohmic Contact Resistance, Surface Resistance, and Channel Resistance for Hydrogen-Terminated Diamond MOSFETs. (2022)
  • Author(s): Jiangwei Liu, Hirotaka Ohsato, Bo Da, Yasuo Koide
  • Journal Title: IEEE Transactions on Electron Devices Volume: 69 Issue: 3 Pages: 1181-1185
  • DOI: 10.1109/ted.2022.3140699
  • Peer Reviewed
• [Journal Article] Highly tolerant diamond Schottky barrier photodiodes for deep-ultraviolet xenon excimer lamp and protons detection (2022)
  • Author(s): Masataka Imura, Manabu Togawa, Masaya Miyahara, Hironori Okumura, Jiro Nishinaga, Meiyong Liao, Yasuo Koide
  • Journal Title: Functional Diamond Volume: 2 Issue: 1 Pages: 167-174
  • DOI: 10.1080/26941112.2022.2150526
  • Peer Reviewed / Open Access
• [Journal Article] Boron-Doped Diamond MOSFETs With High Output Current and Extrinsic Transconductance (2021)
  • Author(s): J. Liu, T. Teraji, B. Da, Y. Koide
  • Journal Title: IEEE Transactions on Electron Devices. Volume: 68 Issue: 8 Pages: 3963-3967
  • DOI: 10.1109/ted.2021.3087115
  • Peer Reviewed
• [Journal Article] Reliable Ohmic Contact Properties for Ni/Hydrogen-Terminated Diamond at Annealing Temperature up to 900 °C (2021)
  • Author(s): X. Yuan, J-W. Liu, J-L Liu, J. Wei, B. Da, C. Li, Y. Koide
  • Journal Title: Coatings Volume: 11 Issue: 4 Pages: 470-470
  • DOI: 10.3390/coatings11040470
  • Peer Reviewed
• [Journal Article] Science and Technology of Integrated Super-High Dielectric Constant AlOx/TiOy Nanolaminates / Diamond for MOS Capacitors and MOSFETs (2020)
  • Author(s): Jiangwei Liu, Orlando Auciello, Elida de Obaldia, Bo Da, Yasuo Koide
  • Journal Title: Carbon Volume: 172 Pages: 112-121
  • DOI: 10.1016/j.carbon.2020.10.031
  • Peer Reviewed / Int'l Joint Research
• [Presentation] ホウ素ドープダイヤモンド金属酸化物半導体界面効果トランジスタ. (2024)
  • Author(s): 劉 江偉, 寺地 徳之, 達 博, 小出 康夫.
  • Organizer: 2024年第71回応用物理学会春季学術講演会
• [Presentation] Super-High Dielectric Constant AlOx/TiOy Nanolaminates: Formation and Mechanism Discussion. STAC (2024)
  • Author(s): LIU, Jiangwei, Masayuki Okamura, Naonori Mashiko, IMURA, Masataka, LIAO, Meiyong, Ryousuke Kikuchi, Michio Suzuka, KOIDE, Yasuo.
  • Organizer: D2MatE 2024
  • Int'l Joint Research
• [Presentation] Effect of post-growth annealing with trimethylgallium on structural quality of AlN layers grown on c-plane sapphire substrate by MOVPE (2023)
  • Author(s): IMURA Masataka, INABA hideki, MANO, Takaaki, KOIDE, Yasuo
  • Organizer: The 14th International Conference on Nitride Semiconductors (ICNS-14)
  • Int'l Joint Research
• [Presentation] High Thermal Stability for Boron-Doped Diamond Field-Effect Transistors (2023)
  • Author(s): LIU, Jiangwei, TERAJI, Tokuyuki, DA, Bo, KOIDE, Yasuo
  • Organizer: NIMS Award Symposium 2023
• [Presentation] Boron-doped diamond MOSFETs. (2023)
  • Author(s): LIU, Jiangwei, TERAJI, Tokuyuki, DA, Bo, KOIDE, Yasuo
  • Organizer: 第84回応用物理学会秋季学術講演会
• [Presentation] Deposition and mechanism study for super-high dielectric constant AlOx/TiOy nanolaminates (2023)
  • Author(s): LIU, Jiangwei, Masayuki Okamura, Naonori Mashiko, IMURA, Masataka, LIAO, Meiyong, Ryousuke Kikuchi, Michio Suzuka, KOIDE, Yasuo.
  • Organizer: 6th International Conference on MATERIALS SCIENCE & NANOTECHNOLOGY.
  • Int'l Joint Research / Invited
• [Presentation] MATERIALS SCIENCE AND DEVICE TECHNOLOGY DEVELOPMENT FOR INTERFACEENGINEERED SUPER HIGH-K DIELECTRIC NANOLAMINATE-BASED OXIDES / CRYSTALLINE DIAMOND FOR NEW GENERATION HIGH POWER ELECTRONICS. (2023)
  • Author(s): Orlando Auciello, Geunhee Lee, Elida de Obaldia, LIU, Jiangwei, KOIDE, Yasuo, Abel Hurtado-Macas
  • Organizer: 31st International Materials Research Congress 2023
  • Int'l Joint Research
• [Presentation] Diamond Metal-Oxide-Semiconductor Field-effect Transistors on a Large-area Wafer (2023)
  • Author(s): LIU, Jiangwei, OOSATO, Hirotaka, DA, Bo, KOIDE, Yasuo.
  • Organizer: 2023 IEEE 6th International Conference on Electronic Information and Communication Technology (ICEICT 2023).
  • Int'l Joint Research / Invited
• [Presentation] Discussion on resistances in hydrogen-terminated diamond MOSFETs. (2023)
  • Author(s): LIU, Jiangwei, OOSATO, Hirotaka, DA, Bo, KOIDE, Yasuo.
  • Organizer: International Conference on New Diamond and Nano Carbons (NDNC) 2023
  • Int'l Joint Research
• [Presentation] Boron-doped diamond MOSFETs with high output current and extrinsic transconductance (2023)
  • Author(s): LIU, Jiangwei, TERAJI, Tokuyuki, DA, Bo, KOIDE, Yasuo.
  • Organizer: International Conference on New Diamond and Nano Carbons (NDNC) 2023.
  • Int'l Joint Research
• [Presentation] TMGa添加ポストアニール処理によるc面サファイア基板上AlNの結晶品質改善 (2022)
  • Author(s): 井村 将隆, 稲葉 英樹, 間野 高明, 石田 暢之, 上杉 文彦, 黒田 陽子, 中山 佳子, 竹口 雅樹, 小出 康夫
  • Organizer: 2022年第69回応用物理学会春季学術講演会
• [Presentation] Investigation of Ohmic Contact Resistance, Surface Resistance, and Channel Resistance for Hydrogen-terminated Diamond MOSFETs (2022)
  • Author(s): LIU Jiangwei, OOSATO Hirotaka, DA Bo, KOIDE Yasuo
  • Organizer: 15th International Conference on New Diamond and Nano Carbons 2022
  • Int'l Joint Research
• [Presentation] Ohmic Contact Resistance, Surface Resistance, and Channel Resistance for Hydrogen-Terminated Diamond MOSFETs. (2022)
  • Author(s): LIU Jiangwei, OOSATO Hirotaka, DA Bo, KOIDE, Yasuo
  • Organizer: 9th International Symposium on Control of Semiconductor Interfaces (ISCSI-Ⅸ)
  • Int'l Joint Research
• [Presentation] Cutting-Edge Diamond FET and MEMS Devices (2022)
  • Author(s): KOIDE Yasuo
  • Organizer: 2nd Global Summit on Polymer Science and Composite Materials (PolyScience2022). 2022
  • Int'l Joint Research / Invited
• [Presentation] Resistance clarification in hydrogen-terminated diamond MOSFETs. (2022)
  • Author(s): LIU Jiangwei, OOSATO Hirotaka, DA Bo, KOIDE Yasuo
  • Organizer: 令和4年応用物理学会秋季学術講演会. 2022
• [Presentation] Challenge to development of III-nitride Nanolaminates/Diamond Heterojunction devices (2021)
  • Author(s): 小出 康夫, 井村 将隆, 劉 江偉, 廖 梅勇
  • Organizer: Virtual Workshop on Materials Science and Advanced Electronics Created by Singularity
  • Int'l Joint Research
• [Presentation] Science and Technology of Integrated Multifunctional Super High-K Dielectric Oxide Nanolaminates / Diamond for New Generation High Power Electronics. Virtual Workshop on Materials Science and Advanced Electronics Created by Singularity (2021)
  • Author(s): Orlando Auciello, 劉 江偉, 小出 康夫, Elida de Obaldia
  • Organizer: Virtual Workshop on Materials Science and Advanced Electronics Created by Singularity
  • Int'l Joint Research
• [Presentation] High output current boron-doped diamond MESFETs. Virtual Workshop on Materials Science and Advanced Electronics Created by Singularity. (2021)
  • Author(s): 劉 江偉, 寺地 徳之, 達 博, 小出 康夫
  • Organizer: Virtual Workshop on Materials Science and Advanced Electronics Created by Singularity
  • Int'l Joint Research
• [Presentation] Super high-dielectric constant Al2O3/TiO2 nanolaminates deposited by the atomic layer deposition technique (for diamond MOSFETs). (2021)
  • Author(s): 劉 江偉, Orlando Auciello, Elida de Obaldia, 達 博, 小出 康夫
  • Organizer: マテリアル先端リサーチインフラ オンラインセミナー 『原子層堆積技術（ALD）による成膜技術』. 2021
• [Presentation] Triple-gate fin-type hydrogenated diamond MOSFETs. (2021)
  • Author(s): 劉 江偉, 大里 啓孝, 達 博, 小出 康夫
  • Organizer: 14th International Conference on New Diamond and Nano Carbons (NDNC) 2020. 2021
  • Int'l Joint Research
• [Presentation] An AlOx/TiOy nanolaminate on hydrogenated diamond for metal-oxide-semiconductor electronic devices. (2021)
  • Author(s): 劉 江偉, Orlando Auciello, Elida de Obaldia, 達 博, 小出 康夫
  • Organizer: 14th International Conference on New Diamond and Nano Carbons (NDNC) 2020. 2021
  • Int'l Joint Research
• [Presentation] Science and Technology of Integrated Super-High Dielectric Constant AlOx/TiOy Nanolaminates / Diamond for Transformational Nanoelectronics (2021)
  • Author(s): 劉 江偉, Elida de Obaldia, 達 博, 小出 康夫
  • Organizer: IEEE 2021 ISAF-ISIF-PFM Joint Conference. 2021
  • Int'l Joint Research
• [Presentation] Science and Technology of Integrated Super-High Dielectric Constant AlOx/TiOy Nanolaminates / Diamond for MOS Capacitors and MOSFETs. (2021)
  • Author(s): Orlando Auciello, 劉 江偉, Elida de Obaldia, 達 博, 小出 康夫
  • Organizer: 2021 MRS Spring Meeting & Exhibit
  • Invited
• [Presentation] Ⅲ族窒化物ナノラミネート特異構造を用いたダイヤモンド電子デバイスの開発 (2021)
  • Author(s): 小出 康夫, 劉 江偉, 井村 将隆, 廖 梅勇
  • Organizer: 第68回応用物理学会春季学術講演会. 2021
  • Invited
• [Presentation] Operations of hydrogenated diamond MOSFETs after high-temperature annealing (2021)
  • Author(s): 劉 江偉, 大里 啓孝, 達 博, 寺地 徳之, 小林 篤, 藤岡 洋, 小出 康夫.
  • Organizer: The 8th Asian Conference on Crystal Growth and Crystal Technology. 2021
  • Int'l Joint Research
• [Presentation] Development of Atomic Layer Deposition Technique of AlxGa1-xN for Hydrogen-terminated diamond MIS-FETs (2021)
  • Author(s): 井村 将隆, 小出 康夫
  • Organizer: The 8th Asian Conference on Crystal Growth and Crystal Technology. 2021
  • Int'l Joint Research
• [Presentation] Development of Boron-Doping Diamond-Based Metal-Semiconductor Field-Effect Transistors (2021)
  • Author(s): 劉 江偉, 寺地 徳之, 達 博, 大里 啓孝, 小出 康夫
  • Organizer: MANA INTERNATIONAL SYMPOSIUM 2021 jointly with ICYS. 2021
  • Int'l Joint Research
• [Presentation] Diamond MOSFETs with a super-high dielectric constant AlOx/TiOx nanolaminate insulator. (2021)
  • Author(s): 小出 康夫, 劉 江偉, 達 博, Orlando Auciello, Elida de Obaldia
  • Organizer: The 8th Asian Conference on Crystal Growth and Crystal Technology On-Line Conference. 2021
  • Int'l Joint Research
• [Presentation] Development of Atomic Layer Deposition Technique of AlxGa1-xN for Hydrogen-terminated diamond MIS-FETs (2021)
  • Author(s): Masataka Imura, Yasuo Koide
  • Organizer: The 8th Asian Conference on Crystal Growth and Crystal Technology
  • Int'l Joint Research
• [Presentation] Diamond MOSFETs with a super-high dielectric constant AlOx/TiOx nanolaminate insulator (2021)
  • Author(s): Yasuo Koide, Jiangwei Liu, Bo Da, Orlando Auciello, Elida de Obaldia
  • Organizer: The 8th Asian Conference on Crystal Growth and Crystal Technology
  • Int'l Joint Research
• [Presentation] Operations of hydrogenated diamond MOSFETs after high-temperature annealing (2021)
  • Author(s): Jiangwei Liu, Hirotaka Oosato, Bo Da, Tokuyuki Teraji, Atsushi Kobayashi, Hiroshi Fujioka, and Yasuo Koide
  • Organizer: The 8th Asian Conference on Crystal Growth and Crystal Technology
  • Int'l Joint Research
• [Presentation] Ⅲ族窒化物ナノラミネート特異構造を用いたダイヤモンド電子デバイスの開発 (2021)
  • Author(s): 小出康夫, 劉江偉, 井村将隆, 廖梅勇
  • Organizer: 2021年第68回応用物理学会春季学術講演会 シンポジウム「特異構造の結晶科学～学術とエレクトロニクス展開～」
  • Invited
• [Presentation] Advanced diamond FET and MEMS devices (2020)
  • Author(s): Yasuo Koide
  • Organizer: MRS Spring & Fall Meeting, EL15: Ultra-Wide Bandgap Materials, Devices and Systems
  • Invited
• [Presentation] ワイドギャップ半導体異種接合とデバイス応用 (2020)
  • Author(s): 小出康夫，井村将隆，劉 江偉，廖 梅勇
  • Organizer: 第81回応用物理学会秋季学術講演会 シンポジウム「第3世代異種材料接合と膜成長自在制御：界面ナノ・キベルネテス（舵手）」
  • Invited