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Nanolaminate multifunctional film with the atomic-level oxygen vacancy control and its mechanism of giant dielectric constant

Research Project

Project/Area Number 20H02189
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Review Section Basic Section 21050:Electric and electronic materials-related
Research InstitutionNational Institute for Materials Science

Principal Investigator

NABATAME TOSHIHIDE  国立研究開発法人物質・材料研究機構, ナノアーキテクトニクス材料研究センター, 特命研究員 (10551343)

Co-Investigator(Kenkyū-buntansha) 池田 直樹  国立研究開発法人物質・材料研究機構, 技術開発・共用部門, 主任エンジニア (10415771)
大井 暁彦  国立研究開発法人物質・材料研究機構, 技術開発・共用部門, 主任エンジニア (20370364)
塚越 一仁  国立研究開発法人物質・材料研究機構, ナノアーキテクトニクス材料研究センター, グループリーダー (50322665)
Project Period (FY) 2020-04-01 – 2024-03-31
Project Status Completed (Fiscal Year 2023)
Budget Amount *help
¥17,550,000 (Direct Cost: ¥13,500,000、Indirect Cost: ¥4,050,000)
Fiscal Year 2023: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2022: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2021: ¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
Fiscal Year 2020: ¥6,500,000 (Direct Cost: ¥5,000,000、Indirect Cost: ¥1,500,000)
Keywords原子層堆積法 / ナノラミネート構造 / 機能性複合酸化物膜 / 高誘電率 / HfAlOx膜 / HfZrOx膜 / GaNパワーデバイス / ナノラミネート膜 / (HfO2)/(ZrO2)膜 / MIMキャパシタ / 誘電率 / ナノラミネート複合機能膜 / 酸素欠損 / 巨大誘電率 / キャパシタ / 複合酸化物 / 積層膜 / 電気特性 / ZrO2 / Al2O3
Outline of Research at the Start

金属酸化物を絶縁膜として用いたコンデンサー、DRAMメモリ及びパワーデバイス等の電子デバイスでは、低消費電力を達成するために低電圧駆動、低リーク電流及び高容量が望まれている。
これらのスペックを満足させるために、材料物性から限界のある単一の金属酸化物に代わり、原子層堆積法を用いて、酸化アルミニウムナノ層と異種金属酸化物ナノ層をプログラムして積層したナノラミネート(=超格子形状)超構造の複合機能性膜を創生して、この複合機能性膜が絶縁膜としての有望性について検討する事を研究の目的とした。

Outline of Final Research Achievements

We investigated characteristics of multifunctional oxide films with a nanolaminate structure which two types of metal oxides are alternately layered at the atomic level using atomic layer deposition. In the (HfO2)m/(ZrO2)n laminate films, the Hf/Zr ratio could be controlled by changing ALD m/n cycles. HfAlOx film which fabricated from (HfO2)m/(Al2O3)n nanolaminate structure exhibited superior reliability characteristics. Nanolaminate structures consisting of two types of metal oxides by ALD is one of the promising methods for designing new nanomaterials.

Academic Significance and Societal Importance of the Research Achievements

本研究で試みた原子層堆積法を用いて原子レベルで制御した2種類の酸化物を積層させて作製したナノラミネート構造は、組合せ及び組成比を幅広く変える事ができ、その結果、ナノレベルでの材料設計ができた。この手法で得られたナノラミネート膜からの構造変化で、その電気的な特性を評価する事で、学術的に有意義な知見を得られた。また、幅広いアプリケーションの1つであるGaNパワーデバイスで、(HfO2)m/(Al2O3)nナノラミネート構造から作製したHfAlOx膜が優れた信頼性特性を示したことから、ゲート絶縁膜として有望な候補材料である事を示せたことは社会的に貢献できたと思う。

Report

(5 results)
  • 2023 Annual Research Report   Final Research Report ( PDF )
  • 2022 Annual Research Report
  • 2021 Annual Research Report
  • 2020 Annual Research Report
  • Research Products

    (57 results)

All 2024 2023 2022 2021 2020

All Journal Article (14 results) (of which Int'l Joint Research: 4 results,  Peer Reviewed: 14 results,  Open Access: 2 results) Presentation (43 results) (of which Int'l Joint Research: 27 results,  Invited: 11 results)

  • [Journal Article] 電子デバイスへ向けた原子層堆積法で作製した金属酸化膜の研究2023

    • Author(s)
      生田目 俊秀
    • Journal Title

      表面技術

      Volume: 74 Pages: 137-140

    • Related Report
      2023 Annual Research Report 2022 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Effects of oxidant gas for atomic layer deposition on crystal structure and fatigue of ferroelectric HfxZr1-xO2 thin films2023

    • Author(s)
      Onaya Takashi, Nabatame Toshihide, Nagata Takahiro, Tsukagoshi Kazuhito, Kim Jiyoung, Nam Chang-Yong, Tsai Esther H.R., Kita Koji
    • Journal Title

      Solid-State Electronics

      Volume: 210 Pages: 108801-108801

    • DOI

      10.1016/j.sse.2023.108801

    • Related Report
      2023 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] (Invited) Characteristics of GaN/High-k Capacitors Under Positive Bias Stress2023

    • Author(s)
      Toshihide Nabatame, Tomomi Sawada, Yoshihiro Irokawa, Yasuo Koide, Kazuhito Tsukagoshi
    • Journal Title

      ECS Transactions

      Volume: 112 Issue: 1 Pages: 109-117

    • DOI

      10.1149/11201.0109ecst

    • Related Report
      2023 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Wake-up-free properties and high fatigue resistance of HfxZr1-xO2-based metal-ferroelectric-semiconductor using top ZrO2 nucleation layer at low thermal budget (300°C)2022

    • Author(s)
      Onaya Takashi、Nabatame Toshihide、Inoue Mari、Sawada Tomomi、Ota Hiroyuki、Morita Yukinori
    • Journal Title

      APL Materials

      Volume: 10 Issue: 5 Pages: 051110-051110

    • DOI

      10.1063/5.0091661

    • Related Report
      2022 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Influence of HfO2 and SiO2 interfacial layers on the characteristics of n-GaN/HfSiOx capacitors using plasma-enhanced atomic layer deposition2021

    • Author(s)
      Nabatame Toshihide、Maeda Erika、Inoue Mari、Hirose Masafumi、Irokawa Yoshihiro、Ohi Akihiko、Ikeda Naoki、Onaya Takashi、Shiozaki Koji、Ochi Ryota、Hashizume Tamotsu、Koide Yasuo
    • Journal Title

      Journal of Vacuum Science &Technology A

      Volume: 39 Issue: 6 Pages: 062405-062405

    • DOI

      10.1116/6.0001334

    • Related Report
      2021 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Study of SiO2 Interfacial Layer Growth during Fabrication Process of Ferroelectric HfxZ1-xO2-Based Metal-Ferroelectric Semiconductor2021

    • Author(s)
      Onaya Takashi、Nabatame Toshihide、Inoue Mari、Sawada Tomomi、Ota Hiroyuki、Morita Yukinori
    • Journal Title

      ECS Transactions

      Volume: 104 Issue: 4 Pages: 129-135

    • DOI

      10.1149/10404.0129ecst

    • Related Report
      2021 Annual Research Report
    • Peer Reviewed
  • [Journal Article] (Invited) Study of HfO2-Based High-k Gate Insulators for GaN Power Device2021

    • Author(s)
      Nabatame Toshihide、Maeda Erika、Inoue Mari、Hirose Masafumi、Ochi Ryota、Sawada Tomomi、Irokawa Yoshihiro、Hashizume Tamotsu、Shiozaki Koji、Onaya Takashi、Tsukagoshi Kazuhito、Koide Yasuo
    • Journal Title

      ECS Transactions

      Volume: 104 Issue: 4 Pages: 113-120

    • DOI

      10.1149/10404.0113ecst

    • Related Report
      2021 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Importance of Annealing Step on Dielectric Constant of ZrO2 Layer of MIM Capacitors with Al2O3/ZrO2 and ZrO2/Al2O3 Stack Structures2021

    • Author(s)
      Sawada Tomomi、Nabatame Toshihide、Onaya Takashi、Inoue Mari、Ohi Akihiko、Ikeda Naoki、Tsukagoshi Kazuhito
    • Journal Title

      ECS Transactions

      Volume: 104 Issue: 4 Pages: 121-128

    • DOI

      10.1149/10404.0121ecst

    • Related Report
      2021 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Interface characteristics of β-Ga2O3/Al2O3/Pt capacitors after postmetallization annealing2021

    • Author(s)
      Hirose Masafumi、Nabatame Toshihide、Irokawa Yoshihiro、Maeda Erika、Ohi Akihiko、Ikeda Naoki、Sang Liwen、Koide Yasuo、Kiyono Hajime
    • Journal Title

      Journal of Vacuum Science &Technology A

      Volume: 39 Issue: 1 Pages: 012401-012401

    • DOI

      10.1116/6.0000626

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Comparison of characteristics of thin-film transistor with In2O3 and carbon-doped In2O3 channels by atomic layer deposition and post-metallization annealing in O32021

    • Author(s)
      Kobayashi Riku、Nabatame Toshihide、Onaya Takashi、Ohi Akihiko、Ikeda Naoki、Nagata Takahiro、Tsukagoshi Kazuhito、Ogura Atsushi
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 60 Issue: 3 Pages: 030903-030903

    • DOI

      10.35848/1347-4065/abde54

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1-xO2 thin films using synchrotron x-ray analysis2021

    • Author(s)
      Onaya Takashi、Nabatame Toshihide、Jung Yong Chan、Hernandez-Arriaga Heber、Mohan Jaidah、Kim Harrison Sejoon、Sawamoto Naomi、Nam Chang-Yong、Tsai Esther H. R.、Nagata Takahiro、Kim Jiyoung、Ogura Atsushi
    • Journal Title

      APL Materials

      Volume: 9 Issue: 3 Pages: 031111-031111

    • DOI

      10.1063/5.0035848

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed / Open Access / Int'l Joint Research
  • [Journal Article] Influence of adsorbed oxygen concentration on characteristics of carbon-doped indium oxide thin-film transistors under bias stress2021

    • Author(s)
      Kobayashi Riku、Nabatame Toshihide、Onaya Takashi、Ohi Akihiko、Ikeda Naoki、Nagata Takahiro、Tsukagoshi Kazuhito、Ogura Atsushi
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 60 Issue: SC Pages: SCCM01-SCCM01

    • DOI

      10.35848/1347-4065/abe685

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Improvement of Ferroelectricity and Fatigue Property of Thicker HfxZr1-XO2/ZrO2 Bi-layer2020

    • Author(s)
      Onaya Takashi、Nabatame Toshihide、Inoue Mari、Jung Yong Chan、Hernandez-Arriaga Heber、Mohan Jaidah、Kim Harrison Sejoon、Sawamoto Naomi、Nagata Takahiro、Kim Jiyoung、Ogura Atsushi
    • Journal Title

      ECS Transactions

      Volume: 98 Issue: 3 Pages: 63-70

    • DOI

      10.1149/09803.0063ecst

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Improvement in ferroelectricity and breakdown voltage of over 20-nm-thick HfxZr1-xO2/ZrO2 bilayer by atomic layer deposition2020

    • Author(s)
      Onaya Takashi、Nabatame Toshihide、Inoue Mari、Jung Yong Chan、Hernandez-Arriaga Heber、Mohan Jaidah、Kim Harrison Sejoon、Sawamoto Naomi、Nagata Takahiro、Kim Jiyoung、Ogura Atsushi
    • Journal Title

      Applied Physics Letters

      Volume: 117 Issue: 23 Pages: 232902-232902

    • DOI

      10.1063/5.0029709

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Presentation] 強誘電体HfxZr1-xO2/TiNの界面反応に起因する分極疲労抑制メカニズムに関する考察2024

    • Author(s)
      女屋 崇, 生田目 俊秀, 長田 貴弘, 山下 良之, 塚越 一仁, 喜多 浩之
    • Organizer
      第29回 電子デバイス界面テクノロジー研究会
    • Related Report
      2023 Annual Research Report
  • [Presentation] SiO2ダミープロセスを用いたc及びm面のGaN/Al2O3/PtキャパシタのPBS特性の改善2024

    • Author(s)
      生田目 俊秀, 澤田 朋実, 色川 芳宏, 宮本 真奈美, 三浦 博美, 小出 康夫, 塚越 一仁
    • Organizer
      第29回 電子デバイス界面テクノロジー研究会
    • Related Report
      2023 Annual Research Report
  • [Presentation] Improvement of PBS properties for c- and m-GaN/Al2O3/Pt capacitors using a dummy SiO2 layer2023

    • Author(s)
      Toshihide NABATAME, Tomomi SAWADA, Yoshihiro IROKAWA, Manami Miyamoto, Hiromi Miura, Yasuo KOIDE, Kazuhito TSUKAGOSHI
    • Organizer
      54th IEEE Semiconductor Interface Specialists Conference
    • Related Report
      2023 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Improvement of Fatigue Properties of Ferroelectric HfxZr1-xO2 Thin Films Using Surface Oxidized TiN Bottom-Electrode2023

    • Author(s)
      Takashi ONAYA, Toshihide NABATAME, Takahiro NAGATA, Yoshiyuki YAMASHITA, Kazuhito TSUKAGOSHI, Yukinori Morita, Hiroyuki Ota, Shinji Migita, Koji Kita
    • Organizer
      54th IEEE Semiconductor Interface Specialists Conference
    • Related Report
      2023 Annual Research Report
    • Int'l Joint Research
  • [Presentation] 原子層堆積技術がリードする電子デバイス2023

    • Author(s)
      生田目 俊秀
    • Organizer
      日本電子材料技術協会 2023年第60回秋期講演大会
    • Related Report
      2023 Annual Research Report
    • Invited
  • [Presentation] Impact of ALD-ZrO2 nucleation layers on leakage current properties and dielectric constant of ferroelectric HfxZr1-xO2 thin films2023

    • Author(s)
      Onaya Takashi, Toshihide NABATAME, Kazuhito TSUKAGOSHI, Kita Koji
    • Organizer
      36th International Microprocesses and Nanotechnology Conference (MNC 2023)
    • Related Report
      2023 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Improvement of characteristics for n-GaN/Al2O3/Pt capacitor with the GaN surface modified by the dummy SiO2 process2023

    • Author(s)
      Toshihide NABATAME, Yoshihiro IROKAWA, Tomomi SAWADA, Manami MIYAMOTO, Hiromi MIURA, Yasuo KOIDE, Kazuhito TSUKAGOSHI
    • Organizer
      2023 International Workshop on Dielectric Thin Films For Future Electron Devices
    • Related Report
      2023 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Origin of Fatigue Properties Induced by Oxygen Vacancies Originating from Ferroelectric-HfxZr1-xO2/TiN Interface Reaction During Field Cycling2023

    • Author(s)
      Takashi ONAYA, Takahiro NAGATA, Toshihide NABATAME, Yoshiyuki YAMASHITA, Kazuhito TSUKAGOSHI, Koji KITA
    • Organizer
      023 International Workshop on Dielectric Thin Films For Future Electron Devices
    • Related Report
      2023 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Characteristics of GaN/High-k capacitors under positive bias stress2023

    • Author(s)
      Toshihide NABATAME, Tomomi SAWADA, Yoshihiro IROKAWA, Yasuo KOIDE, Kazuhito TSUKAGOSHI
    • Organizer
      244th ECS Meeting
    • Related Report
      2023 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] 原子層堆積法で作製したInOxチャネルを用いた 酸化物トランジスタの特性2023

    • Author(s)
      生田目 俊秀, 小林 陸, 塚越 一仁.
    • Organizer
      第87回半導体・集積回路技術シンポジウム
    • Related Report
      2023 Annual Research Report
    • Invited
  • [Presentation] Crystalline structure of Ga2O3 films on GaN(0001) and sapphire(0001) substrates after annealing process2023

    • Author(s)
      Tomomi SAWADA, Toshihide NABATAME, Makoto TAKAHASHI, Kazuhiro ITO, Yoshihiro IROKAWA, Yasuo KOIDE, Kazuhito TSUKAGOSHI
    • Organizer
      THERMEC 2023 International Conference on Processing & Manufacturing of Advanced Materials Processing, Fabrication, Properties, Applications
    • Related Report
      2023 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Ga diffusion profile and electrical properties of GaN capacitors with high-k gate insulators2023

    • Author(s)
      Toshihide NABATAME, Tomomi SAWADA, Yoshihiro IROKAWA, Hideyuki YASUFUKU, Mitsuaki NISHIO, Satoshi KAWADA, Yasuo KOIDE, Kazuhito TSUKAGOSHI
    • Organizer
      THERMEC 2023 International Conference on Processing & Manufacturing of Advanced Materials Processing, Fabrication, Properties, Applications
    • Related Report
      2023 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Role of interface reaction layer between ferroelectric HfxZr1-xO2 thin film and TiN electrode on endurance properties2023

    • Author(s)
      Takashi ONAYA, Toshihide NABATAME, Takahiro NAGATA, Kazuhito TSUKAGOSHI, Jiyoung Kim, Chang-Yong Nam, Esther H.R. Tsai, Koji Kita
    • Organizer
      INFOS2023 23rd CONFERENCE ON INSULATING FILMS ON SEMICONDUCTORS
    • Related Report
      2023 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Characteristics of oxide TFT using atomic-layer deposited InOx-based metal oxide channel2023

    • Author(s)
      Toshihide NABATAME, Riku KOBAYASHI, Kazuhito TSUKAGOSHI
    • Organizer
      2023 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors
    • Related Report
      2023 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] GaN(0001)基板上でのアモルファスGa2O3膜の熱処理による高配向結晶成長2023

    • Author(s)
      澤田 朋実, 生田目 俊秀, 高橋 誠, 伊藤 和博, 女屋 崇, 色川 芳宏, 小出 康夫, 塚越 一仁
    • Organizer
      第28回 電子デバイス界面テクノロジー研究会
    • Related Report
      2022 Annual Research Report
  • [Presentation] TiN下部電極の表面酸化による強誘電体TiN/HfxZr1-xO2/TiNキャパシタの分極疲労の抑制2023

    • Author(s)
      女屋 崇, 生田目 俊秀, 森田 行則, 太田 裕之, 右田 真司, 喜多 浩之, 長田 貴弘, 塚越 一仁, 松川 貴
    • Organizer
      第28回 電子デバイス界面テクノロジー研究会
    • Related Report
      2022 Annual Research Report
  • [Presentation] 酸化物半導体デバイスにおける原子層堆積技術の最前線.2023

    • Author(s)
      生田目 俊秀
    • Organizer
      2023年 第70回応用物理学会春季学術講演会
    • Related Report
      2022 Annual Research Report
    • Invited
  • [Presentation] 分極疲労時の強誘電体HfxZr1-xO2/TiN界面反応に起因した酸素欠損生成の起源2023

    • Author(s)
      女屋 崇, 長田 貴弘, 生田目 俊秀, 山下 良之, 塚越 一仁, 森田 行則, 太田 裕之, 右田 真司, 喜多 浩之
    • Organizer
      2023年 第70回応用物理学会春季学術講演会
    • Related Report
      2022 Annual Research Report
  • [Presentation] Ferroelectric HfxZr1-xO2-based capacitors with controlled-oxidation surface of TiN bottom-electrode2022

    • Author(s)
      Takashi Onaya, Toshihide Nabatame, Yukinori Morita, Hiroyuki Ota, Shinji Migita, Koji Kita, Takahiro Nagata, Kazuhito Tsukagoshi
    • Organizer
      MNC 2022, 35th International Microprocesses and Nanotechnology Conference. 2022
    • Related Report
      2022 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Structural change of Ga2O3 film on GaN(0001) substrate by atomic layer deposition and post-deposition annealing2022

    • Author(s)
      Tomomi Sawada, Toshihide Nabatame, Makoto Takahashi, Kazuhiro Ito, Takashi Onaya, Yoshihiro Irokawa, Yasuo Koide, Kazuhiro Tsukagoshi
    • Organizer
      MNC 2022, 35th International Microprocesses and Nanotechnology Conference. 2022
    • Related Report
      2022 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Study of gate insulator for GaN power device using atomic layer deposition2022

    • Author(s)
      Toshihide Nabatame
    • Organizer
      MNC 2022, 35th International Microprocesses and Nanotechnology Conference. 2022
    • Related Report
      2022 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Growth of Ga2O3 films on Si and GaN substrates by atomic layer deposition and post-deposition annealing2022

    • Author(s)
      Toshihide Nabatame, Tomomi Sawada, Makoto Takahashi, Kazuhiro Ito, Takashi Onaya, Yoshihiro Irokawa, Yasuo Koide, Kazuhiro Tsukagoshi
    • Organizer
      Visual-JW 2022 & DEJI2MA-2
    • Related Report
      2022 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] 異なる酸化剤を用いた原子層堆積法により作製した 強誘電体HfxZr1-xO2/TiNの構造評価2022

    • Author(s)
      女屋 崇, 生田目 俊秀, 長田 貴弘, 上田 茂典, Y. C. Jung, H. Hernandez-Arriaga, J. Mohan, J. Kim, C.-Y. Nam, E. H. R. Tsai, 喜多 浩之, 右田 真司, 太田 裕之, 森田 行則
    • Organizer
      2022年 第83回応用物理学会秋季学術講演会
    • Related Report
      2022 Annual Research Report
  • [Presentation] 強誘電性の向上へ向けたTiN/HfxZr1-xO2界面のTiOxNy層の重要性2022

    • Author(s)
      女屋 崇, 生田目 俊秀, 長田 貴弘, 上田 茂典, Yong Chan Jung, Heber Hernandez-Arriaga, Jaidah Mohan, Jiyoung Kim, Chang-Yong Nam, Esther H. R. Tsai, 太田 裕之, 森田 行則
    • Organizer
      第27回 電子デバイス界面テクノロジー研究会. 2022
    • Related Report
      2021 Annual Research Report
  • [Presentation] Study of HfSiOx film as gate insulator for GaN power device2021

    • Author(s)
      Toshihide Nabatame, Erika Maeda, Mari Inoue, Ryota Ochi, Yasuhiro Irokawa, Tamotsu Hashizume, Koji Shiozaki, Yasuo Koide
    • Organizer
      20th International Workshop on Junction Technology 2021
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Effect of Ti Scavenging Layer on Ferroelectricity of HfxZr1-xO2 Thin Films Fabricated by Atomic Layer Deposition Using Hf/Zr Cocktail Precursor2021

    • Author(s)
      Takashi Onaya, Toshihide Nabatame, Naomi, Sawamoto, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Atsushi Ogura
    • Organizer
      AVS 21st International Conference on Atomic Layer Deposition (ALD 2021)
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Study of SiO2 growth mechanism between a single SiO2 and (HfO2)/(SiO2) nanolaminate formation by ALD using TDMAS and H2O gas2021

    • Author(s)
      Toshihide Nabatame, Mari Inoue, Erika Maeda, Takashi Onaya, Masashi Hirose, Riku Kobayashi, Akihiko Ohi, Naoki Ikeda, Kazuhito Tsukagoshi
    • Organizer
      21st International Conference on Atomic Layer Deposition. 2021
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Investigation of HfSiOx gate insulator formed by changing fabrication process conditions for GaN power device2021

    • Author(s)
      Toshihide Nabatame, Erika Maeda, Mari Inoue, Masashi Hirose, Ryota Ochi, Yasuhiro Irokawa, Tamotsu Hashizume, Koji Shiozaki, Yasuo Koide
    • Organizer
      2021 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2021)
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] TiN/HfxZr1-xO2/Si-MFS作製におけるSiO2界面層成長の抑制2021

    • Author(s)
      女屋 崇, 生田目 俊秀, 井上 万里, 澤田 朋実, 太田 裕之, 森田 行則
    • Organizer
      第82回応用物理学会秋季学術講演会
    • Related Report
      2021 Annual Research Report
  • [Presentation] Study of SiO2 Interfacial Layer Growth during Fabrication Process of Ferroelectric HfxZr1-xO2-Based Metal-Ferroelectric-Semiconductor2021

    • Author(s)
      Takashi Onaya, Toshihide Nabatame, Mari Inoue, Tomomi Sawada, Hiroyuki Ota, Yukinori Morita
    • Organizer
      240th ECS Meeting
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research
  • [Presentation] mportance of Annealing Step on Dielectric Constant of ZrO2 Layer of MIM Capacitors with Al2O3/ZrO2 and ZrO2/Al2O3 Stack Structures2021

    • Author(s)
      Sawada Tomomi、Nabatame Toshihide、Onaya Takashi、Inoue Mari、Ohi Akihiko、Ikeda Naoki、Tsukagoshi Kazuhito
    • Organizer
      240th ECS Meeting
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Study of HfO2-based High-k gate insulators for GaN power device2021

    • Author(s)
      Nabatame Toshihide、Maeda Erika、Inoue Mari、Hirose Masafumi、Ochi Ryota、Sawada Tomomi、Irokawa Yoshihiro、Hashizume Tamotsu、Shiozaki Koji、Onaya Takashi、Tsukagoshi Kazuhito、Koide Yasuo
    • Organizer
      240th ECS Meeting
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Study on Ferroelectric Switching Properties and Fatigue Mechanism of Low-Temperature Fabricated HfxZr1-xO2 Thin Films using Pulse Measurement2021

    • Author(s)
      女屋 崇, 生田目 俊秀, Yong Chan Jung, Heber Hernandez-Arriaga, Jaidah Mohan, Harrison Sejoon Kim, 澤本 直美, 長田 貴弘, Jiyoung Kim, 小椋 厚志
    • Organizer
      第26回 電子デバイス界面テクノロジー研究会-材料・プロセス・デバイス特性の物理- (EDIT26). 2021
    • Related Report
      2020 Annual Research Report
  • [Presentation] Control of ferroelectric phase formation in HfxZr1-xO2 thin films using nano-ZrO2 nucleation layer technique2021

    • Author(s)
      Takashi Onaya, Toshihide Nabatame, Naomi Sawamoto, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Atsushi Ogura
    • Organizer
      MANA International Symposium 2021
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research
  • [Presentation] 放射光X線による低温形成したHfxZr1-xO2薄膜の直方晶相同定の検討2021

    • Author(s)
      女屋 崇, 生田目 俊秀, Yong Chan Jung, Heber Hernandez-Arriaga, Jaidah Mohan, Harrison Sejoon Kim, 澤本 直美, Chang-Yong Nam, Esther H. R. Tsai, 長田 貴弘, Jiyoung Kim, 小椋 厚志
    • Organizer
      第68回応用物理学会春季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] Study of ALD HfO2-based high-k for GaN power devices and Ferroelectric devices2020

    • Author(s)
      Toshihide Nabatame, Takashi Onaya, Erika Maeda, Masashi Hirose, Yoshihiro Irokawa, Koji Shiozaki, Yasuo Koide
    • Organizer
      20th International conference on Atomic Layer Deposition (ALD/ALE 2020)
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Air及びN2雰囲気のバイアスストレスによるアモルファスCarbon-doped In2O3TFTのトランジスタ特性2020

    • Author(s)
      小林 陸, 生田目 俊秀, 女屋 崇, 大井 暁彦, 池田 直樹, 長田 貴弘, 塚越 一仁, 小椋 厚志
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] GaNパワーデバイス用HfAlOx、HfSiOx、AlSiOx、Al2O3及びHfO2 絶縁膜の特性比較2020

    • Author(s)
      前田 瑛里香, 生田目 俊秀, 廣瀨 雅史, 井上 万里, 大井 暁彦, 池田 直樹, 塩崎宏司, 橋詰保, 清野肇
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] HfxZr1-xO2/ZrO2積層構造による強誘電体厚膜の強誘電性の向上2020

    • Author(s)
      女屋 崇, 生田目 俊秀, 井上 万里, Yong Chan Jung, Heber Hernandez-Arriaga, Jaidah Mohan, Harrison S. Kim, 澤本 直美, 長田 貴弘, Jiyoung Kim, 小椋 厚志
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] Improvement of Ferroelectricity and Fatigue Property of Thicker HfxZr1-xO2/ZrO2 Bi-layer2020

    • Author(s)
      Takashi Onaya, Toshihide Nabatame, Mari Inoue, Yong Chan Jung, Heber Hernandez-Arriaga, Jaidah Mohan, Harrison S Kim, Naomi Sawamoto, Takahiro Nagata, Jiyoung Kim, Atsushi Ogura
    • Organizer
      Pacific Rim Meeting on Electrochemical and Solid-State Science 2020 (PRiME 2020)
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Characteristic of flexible ReRAM with Al2O3/TiO2 active layer by ALD and PDA process at low temperature2020

    • Author(s)
      Toshihide Nabatame, Tomoji Oishi, Mari Inoue, Makoto Takahashi, Kazuhiro Ito, Naoki Ikeda, Akihiko Ohi
    • Organizer
      Pacific Rim Meeting on Electrochemical and Solid-State Science 2020 (PRiME 2020)
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research
  • [Presentation] nfluence of Adsorbed O2 on The Gate-Bias Stress Stability of Back-Gate-Type TFT with Carbon-Doped In2O3 Channel2020

    • Author(s)
      Riku Kobayashi, Toshihide Nabatame, Takahsi Onaya, Akihiko Ohi,Naoki Ikeda, Takahiro Nagata, Kazuhito Tsukagoshi, Atsusi Ogura
    • Organizer
      33rd International Microprocesses and Nanotechnology Conference 2020
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Possibility of Above 20-nm-Thick HfxZr1-xO2/ZrO2 and HfxZr1-xO2/HfO2 Bilayers for High Polarization and Breakdown Voltage2020

    • Author(s)
      Takashi Onaya, Toshihide Nabatame, Mari Inoue, Yong Chan Jung, Heber Hernandez-Arriaga, Jaidah Mohan, Harrison Sejoon Kim, Naomi Sawamoto, Takahiro Nagata, Jiyoung Kim, Atsushi Ogura
    • Organizer
      51th IEEE Semiconductor Interface Specialists Conference. 2020
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research

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Published: 2020-04-28   Modified: 2025-01-30  

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