Intelligent Active Balancing of Parallel/Series-connected Power Devices
| Project/Area Number |
20K14720
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| Research Category |
Grant-in-Aid for Early-Career Scientists
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| Allocation Type | Multi-year Fund |
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| Review Section |
Basic Section 21010:Power engineering-related
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| Research Institution | Kyoto University of Advanced Science |
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Principal Investigator |
Tripathi Ravi・Nath 京都先端科学大学, ナガモリアクチュエータ研究所, 助教 (00869745)
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| Project Period (FY) |
2020-04-01 – 2024-03-31
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| Project Status |
Granted (Fiscal Year 2022)
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| Budget Amount *help |
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2022: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2021: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2020: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
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| Keywords | Power device / Paralleling / SiC / GaN / Power Devices / Parallel Connection / Gate Control / Balancing / Active Balancing / Intelligent Control |
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| Outline of Research at the Start |
The scientific and technological evolution of state-of- the-art devices since its inception has made a leap in power rating. This ultimately leads to extend the horizon for operating range of a single device considering blocking voltage and current capability. However, higher current/voltage ratings of power devices are required for high power conversion and control Enhancement and optimization of the performance of power semiconductor devices are of fundamental concern, especially for the system consisting of parallel/series connected devices.
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| Outline of Annual Research Achievements |
The intelligent balancing of the parallel connected power devices is explored considering the wide band gap power devices. Parallel connected SiC devices are controlled using the gate delay and gate compensation control with appropriate resolution that is capable of minimizing the unbalanced current.
Further, a hybrid switch ooncept is proposed and implemented considering a chopper circuit for the improved ruggedness and switching performance of the GaN and SiC switches. A parallel hybrid GaN and SiC switch with intelligent switching control technique using single gate driver solution, is demonstrated with improved system performance.
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| Current Status of Research Progress |
Current Status of Research Progress
2: Research has progressed on the whole more than it was originally planned.
Reason
The two parallel connected SiC devices are explored with intelligent switching control operation , optimized and improved current balancing is successfully achieved with gate delay control and gate voltage control. Incorporating both control methodology , it is capable of achieving dynamic as well as static current sharing among the devices. Especially in case of SiC devices the unbalancing among the devices happen due to threshold voltage. SiC is capable of achieving static current balancing inherently , however this phenomenon works in the change in on resistance correspond to junction temperature. But change in junction temperature ultimately affects the threshold voltage. So in this case both dynamic and static current control is incorporated.
In addition a novel concept based on paralleling devices and intelligent control, a paralleled hybrid switch concept for SiC and GaN is proposed and implemented with validation on the dc-dc converter circuit.
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| Strategy for Future Research Activity |
Future plan is to explore the paralleling of Sic devices for four parallel switches to validate the proposed concept as well as to explore the intelligent balancing possibility for GaN devices as a separate
Project for the high speed switching and intelligent control
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Report
(3 results)
Research Products
(3 results)
