| Budget Amount *help |
¥46,410,000 (Direct Cost: ¥35,700,000、Indirect Cost: ¥10,710,000)
Fiscal Year 2011: ¥6,240,000 (Direct Cost: ¥4,800,000、Indirect Cost: ¥1,440,000)
Fiscal Year 2010: ¥17,680,000 (Direct Cost: ¥13,600,000、Indirect Cost: ¥4,080,000)
Fiscal Year 2009: ¥22,490,000 (Direct Cost: ¥17,300,000、Indirect Cost: ¥5,190,000)
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| Research Abstract |
To elucidate the origin of interface dipoles presented at dielectric and semiconductor interface, flatband voltages of MOS capacitors with rare earth oxides have been characterized. A model to reproduce the thickness dependent flatband voltage shift has been proposed. The composition of Si atoms in oxides rarely affects the magnitude of interface dipole. Oxygen atom supply at the interface, either by rare earth oxide stacking or by process, can shift the flatband voltage, suggesting that the main origin of interface dipole is due to oxygen defect during silicate reaction.
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