| Budget Amount *help |
¥17,940,000 (Direct Cost: ¥13,800,000、Indirect Cost: ¥4,140,000)
Fiscal Year 2011: ¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2010: ¥5,980,000 (Direct Cost: ¥4,600,000、Indirect Cost: ¥1,380,000)
Fiscal Year 2009: ¥7,670,000 (Direct Cost: ¥5,900,000、Indirect Cost: ¥1,770,000)
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| Research Abstract |
Germanium on insulator structures have been expected as starting materials for future electric devices. Therefore, new fabrication process of GOI structure is required to obtain high-quality single-crystalline Ge layers. In this study we have proposed novel method and examined the advantages of the process. The transistors based on the GOI structures fabricated by this process showed excellent electrical properties, indicting the benefit of this method and the availability for future electric devices.
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