Fabrication and electrical characterization of GOI structures by rapid melt growth
| Project/Area Number |
21360149
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (B)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 一般 |
|---|
| Research Field |
Electronic materials/Electric materials
|
|---|
| Research Institution | Osaka University |
|---|
Principal Investigator |
|
|---|
| Co-Investigator(Renkei-kenkyūsha) |
WATANABE Heiji 大阪大学, 大学院・工学研究科, 教授 (90379115)
HOSOI Takuji 大阪大学, 大学院・工学研究科, 助教 (90452466)
|
|---|
| Project Period (FY) |
2009 – 2011
|
| Project Status |
Completed (Fiscal Year 2011)
|
| Budget Amount *help |
¥17,940,000 (Direct Cost: ¥13,800,000、Indirect Cost: ¥4,140,000)
Fiscal Year 2011: ¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2010: ¥5,980,000 (Direct Cost: ¥4,600,000、Indirect Cost: ¥1,380,000)
Fiscal Year 2009: ¥7,670,000 (Direct Cost: ¥5,900,000、Indirect Cost: ¥1,770,000)
|
|---|
| Keywords | 作成・評価技術 / Ge on insulator / 液相エピタキシャル成長 / 急速昇温加熱 / ゲルマニウム / シリコンゲルマニウム / 選択成長 / バックゲートトランジスタ / 電子デバイス / 半導体 / 結晶成長 |
|---|
| Research Abstract |
Germanium on insulator structures have been expected as starting materials for future electric devices. Therefore, new fabrication process of GOI structure is required to obtain high-quality single-crystalline Ge layers. In this study we have proposed novel method and examined the advantages of the process. The transistors based on the GOI structures fabricated by this process showed excellent electrical properties, indicting the benefit of this method and the availability for future electric devices.
|
Report
(4 results)
Research Products
(30 results)
