| Budget Amount *help |
¥17,810,000 (Direct Cost: ¥13,700,000、Indirect Cost: ¥4,110,000)
Fiscal Year 2011: ¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2010: ¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2009: ¥9,100,000 (Direct Cost: ¥7,000,000、Indirect Cost: ¥2,100,000)
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| Research Abstract |
To evolve the miniaturization and versatility for industrial and consumer electronics which will become core products for future in Japan, we have clarified the relationship between the structure and the operating principle for our proposed new-structured metal/tunneling oxide-layer/electron trapping-layer/SiC/n-Si two-terminal resistive nonvolatile memory and have obtained an on/off current ratio of > 10 and an endurance cycle of >10^4. In addition to the results, we have furthermore devised advanced-type memory by changing materials for the layers and substrate and have obtained important fundamental technologies and guidelines for practical integration applications.
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