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Doping of Functional Impurities in Silicon Nanocrystals and Nanowires for Novel Properties

Research Project

Project/Area Number 21510112
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Nanomaterials/Nanobioscience
Research InstitutionUniversity of Tsukuba

Principal Investigator

MURAKAMI Kouichi  筑波大学, 数理物質系, 教授 (10116113)

Co-Investigator(Kenkyū-buntansha) FUKADA Naoki  独立行政法人物質・材料研究機構, 国際ナノアーキテクトニクス研究拠点, 独立研究者 (90302207)
Project Period (FY) 2009 – 2011
Project Status Completed (Fiscal Year 2011)
Budget Amount *help
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2011: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2010: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2009: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
KeywordsSiナノワイヤ / Siナノ結晶 / 界面水素パッシベーション / 不純物ドーピング / 最大固溶度 / 酸化と偏析挙動 / 新物性 / CVD作成法 / 酸化に伴う不純物偏析出 / 動径方向濃度分布測定 / イオン注入 / 水素原子処 / スピンメモリー効果 / 機能性不純物ドーピング / ドナー / イオン注入効果 / フォトルミネッセンス / 常磁性の偶奇性 / 水素原子処理効果
Research Abstract

We have investigated 1)hydrogen (H) passivation of the interfaces of SiO2 and Si crystalline cores in SiNWs and SiNCs, and 2) novel properties for impurity-doped SiNWs and SiNCs. It was found in this study that donor and acceptor impurities with each maximum solubility can be doped in them and show the opposite segregation effects, and novel optical and magnetic properties are demonstrated in H-passivated samples.

Report

(4 results)
  • 2011 Annual Research Report   Final Research Report ( PDF )
  • 2010 Annual Research Report
  • 2009 Annual Research Report
  • Research Products

    (16 results)

All 2012 2011 2010 2009

All Journal Article (10 results) (of which Peer Reviewed: 9 results) Presentation (6 results)

  • [Journal Article] Segregation Behaviors and Radial Distribution of Dopant Atoms in Silicon Nanowires2011

    • Author(s)
      N. Fukata, S. Ishida, S. Yokono, R.Takiguichi, J. Chen, T. Sekiguchi, andK. Murakami
    • Journal Title

      Nano Lett

      Volume: 11 Pages: 651-656

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Segregation Behaviors and Radial Distribution of Dopant Atoms in Silicon Nanowires2011

    • Author(s)
      N.Fukata, ほか
    • Journal Title

      Nano Letters

      Volume: 11 Pages: 651-656

    • Related Report
      2011 Annual Research Report 2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Si結晶における水素の侵入過程と状態2010

    • Author(s)
      村上浩一
    • Journal Title

      真空

      Volume: vol.53 Pages: 265-270

    • NAID

      10026292914

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Si結晶における水素の侵入過程と状態2010

    • Author(s)
      村上浩一
    • Journal Title

      真空(J,Vac.Soc,Jpn)

      Volume: 53 Pages: 1-6

    • NAID

      10026292914

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Isotope Effect of Penetration of Hydrogen and Deuterium into Silicon through Si/SiO2 Interface2009

    • Author(s)
      K. Murakami, N. Fukata, K. Ishioka, M.Kitajima, N. Uchida, K. Morisawa, H.Morihiro, R. Shirakawa, and M.Tsujimura
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: 48

    • NAID

      40016742995

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Phosphorus Ion Implantation in Silicon Nanocrystals embedded in SiO22009

    • Author(s)
      Kouichi Murakami, Ryota Shirakawa, Masatoshi Tsujimura, Noriyuki Uchida, Naoki Fukata, and Shun-ichi Hishita
    • Journal Title

      J. Appl. Phys

      Volume: 105

    • NAID

      120007131288

    • Related Report
      2011 Final Research Report
  • [Journal Article] Electronic States of P Donors in SiNanocrystals embedded in amorphous SiO2 layer studied by Electron Spin Resonance-Hydrogen Passivation Effects ?2009

    • Author(s)
      Kouichi Murakami, Masatoshi Tsujimura, Ryota Shirakawa, Noriyuki Uchida, and Naoki Fukata
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: 48

    • NAID

      40016704634

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Phosphorus Ion Implantation in Silicon Nanocrystals embedded in SiO_22009

    • Author(s)
      Kouichi Murakami, et al.
    • Journal Title

      J.Appl.Phys. 105

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Electronic States of P Donors in Si Nanocrystals embedded in amorphous SiO_2 layer studied by Electron Spin Resonance -Hydrogen Passivation Effects-2009

    • Author(s)
      Kouichi Murakami, et al.
    • Journal Title

      Jpn.J.Appl.Phys. 48

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Isotope Effect of Penetration of Hydrogen and Deuterium into Silicon through Si/SiO_2 Interface2009

    • Author(s)
      Kouichi Murakami, et al.
    • Journal Title

      Jpn.J.Appl.Phys. 48

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Presentation] シリコンナノワイヤ中のPドナーの熱酸化過程での偏析挙動2012

    • Author(s)
      神永惇, ほか
    • Organizer
      応用物理学会第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学
    • Year and Date
      2012-03-18
    • Related Report
      2011 Final Research Report
  • [Presentation] Segregation Behaviors and Radial Distribution of Dopant Atoms in Silicon Nanowires2011

    • Author(s)
      N.Fukata, ほか
    • Organizer
      MRS Fall-meeting
    • Place of Presentation
      Hynes Convention Center Boston, USA
    • Year and Date
      2011-12-01
    • Related Report
      2011 Annual Research Report
  • [Presentation] Segregation behaviors and radialdistribution of dopant atoms in siliconnanowires2011

    • Author(s)
      N. Fukata, S. Ishida, S.Yokono, R. Takiguchi, T. Sekiguchi1, and K. Murakami
    • Organizer
      2011 MRS FALL Meeting
    • Place of Presentation
      Boston(USA)
    • Year and Date
      2011-02-01
    • Related Report
      2011 Final Research Report
  • [Presentation] Siナノワイヤ中のBアクセプタ濃度分布の定量評価2010

    • Author(s)
      滝口亮, 石田慎哉, 横野茂輝, 深田直樹, 陣君, 関口隆史, 村上浩一
    • Organizer
      秋季応用物理学会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-14
    • Related Report
      2010 Annual Research Report
  • [Presentation] Doping and radial distribution of boron atoms in silicon nanowires2010

    • Author(s)
      R.Takiguchi, S.Ishida, S.Yokono, N.Fukata, S.Hishita, J.Chen, T.Sekiguchi, K.Murakami
    • Organizer
      第6回シリコン材料の科学と技術フォーラム(2010岡山会議)
    • Place of Presentation
      岡山大学
    • Related Report
      2010 Annual Research Report
  • [Presentation] Siナノワイヤにイオン注入したBの電気の活性化2009

    • Author(s)
      齋藤直之, 石田慎哉, 横野茂輝, 深田直樹, 陣君, 関口隆史, 菱田俊一, 村上浩一
    • Organizer
      応用物理学会
    • Place of Presentation
      富山大学
    • Related Report
      2009 Annual Research Report

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Published: 2009-04-01   Modified: 2016-04-21  

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