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In-situ micro-structure fabrication of semiconductor device using maskless selective growth with FIB

Research Project

Project/Area Number 21560327
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionToyohashi University of Technology

Principal Investigator

PAK Kangsa  豊橋技術科学大学, 大学院・工学研究科, 准教授 (10124736)

Project Period (FY) 2009 – 2011
Project Status Completed (Fiscal Year 2011)
Budget Amount *help
¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2011: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2010: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2009: ¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000)
Keywords選択成長 / 化合物半導体 / ガリウムヒ素 / 集束イオンビーム / FIB / 不純物ドー / 不純物ドーピング / 両性不純物
Research Abstract

The maskless selective epitaxy(MLSE) of III-V semiconductor compounds could become an important technique in the preparation of complex integrated device structures such as optoelectronic integrated circuits(OEICs). Focused ion beam(FIB) technology is useful for semiconductor maskless processes such as doping, ion beam assisted etching and deposition in high vacuum. Recently, we investigated on Sn high doped-GaAs, and we successfully fabricated MLSE growth layers of n-and p-GaAs. Using the result, we attempted in fabricating selective p-n junctions and succeeded in-situ pn junction device formation.

Report

(4 results)
  • 2011 Annual Research Report   Final Research Report ( PDF )
  • 2010 Annual Research Report
  • 2009 Annual Research Report
  • Research Products

    (7 results)

All 2011 2010 2009 Other

All Presentation (6 results) Remarks (1 results)

  • [Presentation] Study of maskless selective growth and evaluation of GaAs using a low energy Sn-Ga focused ion beam2011

    • Author(s)
      M. Mokhtar, M. Ishikawa, M. Hisada and K. Pak
    • Organizer
      30^<th> Electronic Material Symposium
    • Place of Presentation
      Laforet Biwako, Shiga, Japan
    • Year and Date
      2011-06-30
    • Related Report
      2011 Final Research Report
  • [Presentation] Study of maskless selective growth and evaluation of GaAs using a low energy Sn-Ga focused ion beam2011

    • Author(s)
      M.Mokhtar, M.Ishikawa, M.Hisada, K.Pak
    • Organizer
      30^h Electronic Material Symposium
    • Place of Presentation
      Laforet Biwako, Shiga, Japan
    • Year and Date
      2011-06-30
    • Related Report
      2011 Annual Research Report
  • [Presentation] A study of in-situ doping on maskless selective growth of GaAs using a low energy Sn-Ga focused ion beam2010

    • Author(s)
      H.Takeda, M.Mokhtar, M.Ishikawa, K.Pak
    • Organizer
      29^<th> Electronic Material Symposium
    • Place of Presentation
      Laforet Shuzenji, Izu, Shizuoka, Japan
    • Year and Date
      2010-07-15
    • Related Report
      2010 Annual Research Report
  • [Presentation] A study of in-situ doping on maskless selective growth of GaAs using a low energy Sn-Ga focused ion beam2010

    • Author(s)
      H. Takeda, M. Mokhtar, M. Ishikawa, and Pak
    • Organizer
      29^<th> Electronic Material Symposium
    • Place of Presentation
      Laforet Shuzenji, Shizuoka, Japan
    • Year and Date
      2010-07-14
    • Related Report
      2011 Final Research Report
  • [Presentation] Maskless selective growth and doping of n-GaAs using a low energy Sn-Ga focused ionbeam2009

    • Author(s)
      T. Suzuki, K. Nobuhara, H. Takeda, M. Mokhtar and K. Pak
    • Organizer
      28^<th> Electronic Material Symposium
    • Place of Presentation
      Laforet Biwako, Shiga, Japan
    • Year and Date
      2009-07-09
    • Related Report
      2011 Final Research Report
  • [Presentation] Maskless selective growth and doping of n-GaAs using a low energy Sn-Ga focused ion beam2009

    • Author(s)
      T. Suzuki, K. Nobuhara, H. Takeda, M. Mokhtar, K. Pak
    • Organizer
      28^<th> Electronic Material Symposium
    • Place of Presentation
      Laforet Biwako, Shiga, Japan
    • Year and Date
      2009-07-09
    • Related Report
      2009 Annual Research Report
  • [Remarks]

    • URL

      http://www.int.ee.tut.ac.jp/paklab/

    • Related Report
      2011 Final Research Report

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Published: 2009-04-01   Modified: 2016-04-21  

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