In-situ micro-structure fabrication of semiconductor device using maskless selective growth with FIB
| Project/Area Number |
21560327
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Toyohashi University of Technology |
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Principal Investigator |
PAK Kangsa 豊橋技術科学大学, 大学院・工学研究科, 准教授 (10124736)
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| Project Period (FY) |
2009 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2011: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2010: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2009: ¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000)
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| Keywords | 選択成長 / 化合物半導体 / ガリウムヒ素 / 集束イオンビーム / FIB / 不純物ドー / 不純物ドーピング / 両性不純物 |
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| Research Abstract |
The maskless selective epitaxy(MLSE) of III-V semiconductor compounds could become an important technique in the preparation of complex integrated device structures such as optoelectronic integrated circuits(OEICs). Focused ion beam(FIB) technology is useful for semiconductor maskless processes such as doping, ion beam assisted etching and deposition in high vacuum. Recently, we investigated on Sn high doped-GaAs, and we successfully fabricated MLSE growth layers of n-and p-GaAs. Using the result, we attempted in fabricating selective p-n junctions and succeeded in-situ pn junction device formation.
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Report
(4 results)
Research Products
(7 results)
