| Project/Area Number |
21560362
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (C)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 一般 |
|---|
| Research Field |
Electron device/Electronic equipment
|
|---|
| Research Institution | Sophia University |
|---|
Principal Investigator |
WAHO Takao 上智大学, 理工学部, 教授 (90317511)
|
|---|
| Co-Investigator(Renkei-kenkyūsha) |
SHIMOMURA Kazuhiko 上智大学, 理工学部, 教授 (90222041)
|
|---|
| Research Collaborator |
SHIMOMURA Kazuhiko 上智大学, 理工学部, 教授 (90222041)
|
|---|
| Project Period (FY) |
2009 – 2011
|
| Project Status |
Completed (Fiscal Year 2011)
|
| Budget Amount *help |
¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2011: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2010: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2009: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
|
|---|
| Keywords | 先端機能デバイス / 集積回路 / 半導体超微細化 / ナノワイヤ / 化合物半導体 / 電子デバイス・機器 / 国際情報交換 / ドイツ / 国際情報交換(ドイツ) / 国際研究者交流(ドイツ) |
|---|
| Research Abstract |
By using a field-assisted self-assembly technique, we have succeeded in placing InAs nanowires on an IC substrate with a good controllability of position and direction. A simple sample-and-hold(S/H) circuit is then fabricated by applying the technique, and a successful S/H operation is obtained. Furthermore, a high-speed and high-resolution S/H circuit is proposed based on circuit simulations that use InAs nanowire HFET device parameters extracted from high-frequency S-parameters.
|
