Selective formation of germanium-on-insulator structures based on liquid phase epitaxy by laser annealing

• Project/Area Number: 21760009
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Single-year Grants
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Osaka University
• Principal Investigator: HOSOI Takuji Osaka University, 工学研究科, 助教 (90452466)
• Project Period (FY): 2009 – 2010
• Project Status: Completed (Fiscal Year 2010)
• Budget Amount: ¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000); Fiscal Year 2010: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000); Fiscal Year 2009: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
• Keywords: ゲルマニウム / GOI基板 / SGOI基板 / 液相エピタキシャル成長 / 半導体基板 / SiGe(シリコンゲルマニウム) / GOI(Germanium On Insulator) / GOI (Germanium On Insulator)

Research Abstract

GOI (Ge-On-Insulator) and SGOI(SiGe-On-Insulator) structures are promising candidates for next-generation semiconductor substrate. We proposed and demonstrated the selective fabrication of single-crystalline Ge wires and high-quality fully relaxed SiGe layers on insulators by liquid-phase epitaxy.

Research Products

• [Journal Article] Fabrication of Fully Relaxed SiGe Layers with High Ge Concentration on Silicon-on-Insulator Wafers by Rapid Melt Growth (2010)
  • Author(s): Takayoshi Shimura, Shimpei Ogiwara, Chiaki Yoshimoto, Takuji Hosoi, Heiji Watanabe
  • Journal Title: Appl.Phys.Express Vol.3
  • NAID: 10027441491
  • Peer Reviewed
• [Journal Article] Fabrication of Fully Relaxed SiGe Layers with High Ge Concentration on Silicon-on-Insulator Wafers by Rapid Melt Growth (2010)
  • Author(s): T.Shimura, T.Hosoi, et al.
  • Journal Title: Applied Physics Express Volume: 3
  • NAID: 10027441491
  • Peer Reviewed
• [Journal Article] Fabrication of Local Ge-on-Insulator Structures by Lateral Liquid-Phase Epitaxy : Effect of Controlling Interface Energy between Ge and Insulators on Lateral Epitaxial Growth (2009)
  • Author(s): Tatsuya Hashimoto, Chiaki Yoshimoto, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe
  • Journal Title: Appl.Phys.Express Vol.2
  • NAID: 10025086916
  • Peer Reviewed
• [Journal Article] Fabrication of Local Ge-on-Insulator Structures by Lateral Liquid-Phase Epitaxy : Effect of Controlling Interface Energy between Ge and Insulators on Lateral Epitaxial Growth (2009)
  • Author(s): T.Hashimoto, et al.
  • Journal Title: Applied Physics Express 2
  • Peer Reviewed
• [Presentation] 急速加熱液相エピタキシャル成長法による高Ge濃度SGOI構造の作製 (2011)
  • Author(s): 荻原伸平、鈴木雄一朗、吉本千秋、細井卓治, 志村考功, 渡部平司
  • Organizer: ゲートスタック研究会-材料・プロセス・評価の物理-第16回研究会
  • Place of Presentation: 東京工業大学
  • Year and Date: 2011-01-22
• [Presentation] 急速加熱液相エピタキシャル成長法による高Ge濃度SGOI構造の作製 (2011)
  • Author(s): 荻原伸平、細井卓治, 他4名
  • Organizer: ゲートスタック研究会第16回研究集会
  • Place of Presentation: 東京工業大学(東京都目黒区)
  • Year and Date: 2011-01-22
• [Presentation] 急速加熱液相エピタキシャル成長法による高Ge濃度SGOI構造の作製 (2010)
  • Author(s): 荻原伸平、吉本千秋、細井卓治、志村考功、渡部平司
  • Organizer: 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学
  • Year and Date: 2010-09-14
• [Presentation] 急速加熱液相エピタキシャル成長法により作製したSGOI構造のGe濃度のアニール温度依存性 (2010)
  • Author(s): 荻原伸平、鈴木雄一朗、吉本千秋、細井卓治、志村考功、渡部平司
  • Organizer: 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学
  • Year and Date: 2010-09-14
• [Presentation] 急速加熱液相エピタキシャル成長法による高Ge濃度SGOI構造の作製 (2010)
  • Author(s): 荻原伸平、細井卓治, 他3名
  • Organizer: 第71回応用物理学関係連合講演会
  • Place of Presentation: 長崎大学(長崎県長崎市)
  • Year and Date: 2010-09-14
• [Presentation] 急速加熱液相エピタキシャル成長法により作製したSGOI構造のGe濃度のアニール温度依存性 (2010)
  • Author(s): 荻原伸平、細井卓治, 他4名
  • Organizer: 第71回応用物理学関係連合講演会
  • Place of Presentation: 長崎大学(長崎県長崎市)
  • Year and Date: 2010-09-14
• [Presentation] Fabrication of Single-Crystal Local Germanium-on-Insulator Structures by Lateral Liquid-Phase Epitaxy (2009)
  • Author(s): Tatsuya Hashimoto, Chiaki Yoshimoto, Takuji Hosoi
  • Organizer: 2009 Material Research Society Fall Meeting
  • Place of Presentation: Boston, USA.
  • Year and Date: 2009-11-30
• [Presentation] Fabrication of Single-Crystal Local Germanium-on-Insulator Structures by Lateral Liquid-Phase Epitaxy (2009)
  • Author(s): T.Hashimoto, et al.
  • Organizer: 2009 Material Research Society Fall Meeting
  • Place of Presentation: Boston, MA, USA
  • Year and Date: 2009-11-30
• [Presentation] Fabrication of Ge Nano-Wires on Insulators Using Lateral Liquid-Phase Epitaxy (2009)
  • Author(s): Chiaki Yoshimoto, Tatsuya Hashimoto, Takuji Hosoi
  • Organizer: 5th Handai Nanoscience and Nanotechnology International Symposium
  • Place of Presentation: Osaka University, JAPAN.
  • Year and Date: 2009-09-01
• [Presentation] Fabrication of Ge Nano-Wires on Insulators Using Lateral Liquid-Phase Epitaxy (2009)
  • Author(s): C.Yoshimoto, et al.
  • Organizer: 5th Handai Nanoscience and Nanotechnology International Symposium
  • Place of Presentation: Osaka, Japan
  • Year and Date: 2009-09-01