Research Project
Grant-in-Aid for Young Scientists (B)
GOI (Ge-On-Insulator) and SGOI(SiGe-On-Insulator) structures are promising candidates for next-generation semiconductor substrate. We proposed and demonstrated the selective fabrication of single-crystalline Ge wires and high-quality fully relaxed SiGe layers on insulators by liquid-phase epitaxy.
All 2011 2010 2009
All Journal Article (4 results) (of which Peer Reviewed: 4 results) Presentation (10 results)
Appl.Phys.Express Vol.3
10027441491
Applied Physics Express
Volume: 3
Appl.Phys.Express Vol.2
10025086916
Applied Physics Express 2