Research Project
Grant-in-Aid for Young Scientists (B)
III-V high mobility channels are a promising technology for future logic applications. To enhance the current injection and reduce the series resistance, heavily doped source/drain structures were formed by MOVPE regrowth. The maximum drain current of 1.3 A/mm and transconductance of 0.8 S/mm were obtained for the regrown souce/drain MOSFET with the channel length of 170 nm. The results show that regrown source is an effective way to improve the drain current of III-V MOSFETs.
All 2011 2010 2009
All Journal Article (4 results) (of which Peer Reviewed: 4 results) Presentation (31 results) Patent(Industrial Property Rights) (1 results)
Applied Physics Express vol.4
Applied Phys.Exp.
Volume: vol.4
Applied Physics Express vol.3
10026690574
Volume: vol.3
