High performance III-V MOSFETs using MOVPE selectively regrown source
Project/Area Number |
21760253
|
Research Category |
Grant-in-Aid for Young Scientists (B)
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Allocation Type | Single-year Grants |
Research Field |
Electron device/Electronic equipment
|
Research Institution | Tokyo Institute of Technology |
Principal Investigator |
KANAZAWA Toru Tokyo Institute of Technology, 大学院・理工学研究科, 助教 (40514922)
|
Project Period (FY) |
2009 – 2010
|
Project Status |
Completed (Fiscal Year 2010)
|
Budget Amount *help |
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2010: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Fiscal Year 2009: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
|
Keywords | MOSFET / 高移動度チャネル / III-V族半導体 / MOVPE / 電子デバイス・機器 / 半導体物性 / 結晶成長 / 極微細加工プロセス / III-V族化合物半導体 / 半導体超微細化 |
Research Abstract |
III-V high mobility channels are a promising technology for future logic applications. To enhance the current injection and reduce the series resistance, heavily doped source/drain structures were formed by MOVPE regrowth. The maximum drain current of 1.3 A/mm and transconductance of 0.8 S/mm were obtained for the regrown souce/drain MOSFET with the channel length of 170 nm. The results show that regrown source is an effective way to improve the drain current of III-V MOSFETs.
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Report
(3 results)
Research Products
(36 results)