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High performance III-V MOSFETs using MOVPE selectively regrown source

Research Project

Project/Area Number 21760253
Research Category

Grant-in-Aid for Young Scientists (B)

Allocation TypeSingle-year Grants
Research Field Electron device/Electronic equipment
Research InstitutionTokyo Institute of Technology

Principal Investigator

KANAZAWA Toru  Tokyo Institute of Technology, 大学院・理工学研究科, 助教 (40514922)

Project Period (FY) 2009 – 2010
Project Status Completed (Fiscal Year 2010)
Budget Amount *help
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2010: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Fiscal Year 2009: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
KeywordsMOSFET / 高移動度チャネル / III-V族半導体 / MOVPE / 電子デバイス・機器 / 半導体物性 / 結晶成長 / 極微細加工プロセス / III-V族化合物半導体 / 半導体超微細化
Research Abstract

III-V high mobility channels are a promising technology for future logic applications. To enhance the current injection and reduce the series resistance, heavily doped source/drain structures were formed by MOVPE regrowth. The maximum drain current of 1.3 A/mm and transconductance of 0.8 S/mm were obtained for the regrown souce/drain MOSFET with the channel length of 170 nm. The results show that regrown source is an effective way to improve the drain current of III-V MOSFETs.

Report

(3 results)
  • 2010 Annual Research Report   Final Research Report ( PDF )
  • 2009 Annual Research Report
  • Research Products

    (36 results)

All 2011 2010 2009

All Journal Article (4 results) (of which Peer Reviewed: 4 results) Presentation (31 results) Patent(Industrial Property Rights) (1 results)

  • [Journal Article] InP/InGaAs Composite Metal-Oxide-Semiconductor Firld-Effect Transistors with Regrown Source and Al_2O_3 gatedielectric Exhibiting Maximum Drain Current Exceeding 1.3 mA/μm2011

    • Author(s)
      R.Terao, T.Kanazawa, S.Ikeda, Y.Yonai, A.Kato, Y.Miyamoto
    • Journal Title

      Applied Physics Express vol.4

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] InP/InGaAs Composite MOSFETs with Regrown Source and Al_2O_3 gatedielectric Exhibiting Maximum Drain Current Exceeding 1.3 mA/μm2011

    • Author(s)
      R.Terao, T.Kanazawa, S.Ikeda, Y.Yonai, A.Kato, Y.Miyamoto
    • Journal Title

      Applied Phys.Exp.

      Volume: vol.4

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Submicron InP/InGaAs Composite-Channel Metal-Oxide-Semiconductor Field-Effect Transistor with Selectively Regrown n+-Source2010

    • Author(s)
      T.Kanazawa, K.Wakabayashi, H.Saito, R.Terao, S.Ikeda, Y.Miyamoto, K.Furuya
    • Journal Title

      Applied Physics Express vol.3

    • NAID

      10026690574

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Submicron InP/InGaAs Composite-Channel Metal-Oxide-Semiconductor Field-Effect Transistor with Selectively Regrown n^+-Source2010

    • Author(s)
      T.Kanazawa, K.Wakabayashi, H.Saito, R.Terao, S.Ikeda, Y.Miyamoto, K.Furuya
    • Journal Title

      Applied Phys.Exp.

      Volume: vol.3

    • NAID

      10026690574

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Presentation] 裏面電極を有するIII-V族量子井戸型チャネルMOSFET2011

    • Author(s)
      金澤徹、寺尾良輔、山口裕太郎、池田俊介、米内義晴、加藤淳、宮本恭幸
    • Organizer
      電子情報通信学会電子デバイス研究会
    • Place of Presentation
      東京
    • Year and Date
      2011-01-14
    • Related Report
      2010 Annual Research Report 2010 Final Research Report
  • [Presentation] Submicron-channel InGaAs MISFET with epitaxially grown source2010

    • Author(s)
      Y. Miyamoto, H. Saito, T. Kanazawa
    • Organizer
      10th IEEE Int. Conf. Solid-State and Integrated Circuit Technology (ICSICT-2010)
    • Place of Presentation
      Shanghai, China
    • Year and Date
      2010-11-03
    • Related Report
      2010 Final Research Report
  • [Presentation] Submicron-channel InGaAs MISFET with epitaxially grown source2010

    • Author(s)
      Y.Miyamoto
    • Organizer
      2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)
    • Place of Presentation
      上海
    • Year and Date
      2010-11-03
    • Related Report
      2010 Annual Research Report
  • [Presentation] InP/InGaAs MOSFET with back-electrode structure bonded on Si substrate using a BCB adhesive layer2010

    • Author(s)
      T. Kanazawa, R. Terao, Y. Yamaguchi, S. Ikeda, Y. Yonai, Y. Miyamoto
    • Organizer
      2010 Int. Conf. Solid State Devices and Materials (SSDM 2010)
    • Place of Presentation
      Tokyo
    • Year and Date
      2010-09-22
    • Related Report
      2010 Final Research Report
  • [Presentation] InP/InGaAs MOSFET with back-electrode structure bonded on Si substrate using a BCB adhesive Layer2010

    • Author(s)
      T.Kanazawa
    • Organizer
      2010 International Conference on Solid State Devices and Materials (SSDM 2010)
    • Place of Presentation
      東京
    • Year and Date
      2010-09-22
    • Related Report
      2010 Annual Research Report
  • [Presentation] InP/IGaAs Quantum Well Channel MOSFET Bonded on Silicon Substrate2010

    • Author(s)
      T. Kanazawa
    • Organizer
      2nd Japanese-Russion Young Scientists Conf. Nano-Materials and Nano-Technology
    • Place of Presentation
      Tokyo
    • Year and Date
      2010-09-21
    • Related Report
      2010 Final Research Report
  • [Presentation] Si基板上貼付された裏面電極付InP/InGaAs MOSFET2010

    • Author(s)
      金澤徹、寺尾良輔、山口裕太郎、池田俊介、米内義晴、加藤淳、宮本恭幸
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎
    • Year and Date
      2010-09-14
    • Related Report
      2010 Annual Research Report 2010 Final Research Report
  • [Presentation] Al_2O_3ゲート絶縁膜および再成長ソースを有するサブミクロンInP/InGaAs n-MOSFET2010

    • Author(s)
      寺尾良輔、金澤徹、池田俊介、米内義晴、加藤淳、宮本恭幸
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎
    • Year and Date
      2010-09-14
    • Related Report
      2010 Annual Research Report 2010 Final Research Report
  • [Presentation] InGaAs/InP MISFET with epitaxially grown source2010

    • Author(s)
      Y. Miyamoto, T. Kanazawa, H. Saito, K. Furuya
    • Organizer
      2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD)
    • Place of Presentation
      Busan
    • Year and Date
      2010-06-25
    • Related Report
      2010 Final Research Report
  • [Presentation] InGaAs MISFET with epitaxially grown sourcce2010

    • Author(s)
      Y. Miyamoto, T. Kanazawa, H. Saito
    • Organizer
      The 3rd Int. Symp. Prganic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2010)
    • Place of Presentation
      Toyama
    • Year and Date
      2010-06-23
    • Related Report
      2010 Final Research Report
  • [Presentation] InGaAs MISFET with epitaxially grown source2010

    • Author(s)
      Y.Miyamoto
    • Organizer
      The 3rd International Symposium on Organic and Inorganic Electronic Materials and Related Nano technologies (EM-NANO 2010)
    • Place of Presentation
      富山
    • Year and Date
      2010-06-23
    • Related Report
      2010 Annual Research Report
  • [Presentation] Submicron InP/InGaAs composite channel MOSFET with selectively regrown n^+-source/drain buried in channel undercut2010

    • Author(s)
      T. Kanazawa, K. Wakabayashi, H. Saito, R. Terao, T. Tajima, S. Ikeda, Y. Miyamoto, K. Furuya
    • Organizer
      The 22nd Int. Conf. Indium Phosphide and Related Materials (IPRM 2010)
    • Place of Presentation
      Takamatsu
    • Year and Date
      2010-06-01
    • Related Report
      2010 Final Research Report
  • [Presentation] Submicron InP/InGaAs composite channel MOSFETs with selectively regrown n^+-source/drain buried in channel undercut2010

    • Author(s)
      T.Kanazawa
    • Organizer
      22nd Int.Conf.Indium Phosphide and Related Materials (IPRM2010)
    • Place of Presentation
      高松
    • Year and Date
      2010-06-01
    • Related Report
      2010 Annual Research Report
  • [Presentation] High-mobility MOSFET with submicron III-V channel2010

    • Author(s)
      金澤徹
    • Organizer
      Technical Meeting on Electron Devices, IEE of Japan
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2010-05-26
    • Related Report
      2009 Annual Research Report
  • [Presentation] III-V族サブミクロンチャネルを有する高移動度MOSFET2010

    • Author(s)
      金澤徹、若林和也、斎藤尚史、寺尾良輔、池田俊介、宮本恭幸、古屋一仁
    • Organizer
      電気学会電子デバイス研究会
    • Place of Presentation
      東京
    • Year and Date
      2010-03-26
    • Related Report
      2010 Final Research Report
  • [Presentation] 再成長ソースを有するサブミクロンInP/InGaAs nMOSFETの電流電圧特性2010

    • Author(s)
      若林和也、金澤徹、斎藤尚史、寺尾良輔、池田俊介、宮本恭幸、古屋一仁
    • Organizer
      第57回応用物理学会関係連合講演会
    • Place of Presentation
      平塚
    • Year and Date
      2010-03-19
    • Related Report
      2010 Final Research Report
  • [Presentation] Al_2O_3ゲート絶縁膜を用いたInP/InGaAsチャネルn-MOSFETの電気特性2010

    • Author(s)
      寺尾良輔、金澤徹、斎藤尚史、若林和也、池田俊介、宮本恭幸、古屋一仁
    • Organizer
      第57回応用物理学会関係連合講演会
    • Place of Presentation
      平塚
    • Year and Date
      2010-03-19
    • Related Report
      2010 Final Research Report
  • [Presentation] 再成長ソースを有するサブミクロンInP/InGaAs nMOSFETの電流電圧特性2010

    • Author(s)
      若林和也
    • Organizer
      第57回応用物理学会関係連合講演会
    • Place of Presentation
      平塚市
    • Year and Date
      2010-03-19
    • Related Report
      2009 Annual Research Report
  • [Presentation] Al_2O_3ゲート絶縁膜を用いたInP/InGaAsコンポジットチャネルMOSFET2010

    • Author(s)
      金澤徹、若林和也、斎藤尚史、田島智宣、池田俊介、宮本恭幸、古屋一仁
    • Organizer
      電子情報通信学会電子デバイス研究会
    • Place of Presentation
      東京
    • Year and Date
      2010-01-14
    • Related Report
      2010 Final Research Report
  • [Presentation] InP/InGaAs composite channel MOSFET with Al_2O_3 gate dielectric2010

    • Author(s)
      金澤徹
    • Organizer
      IEICE Technical Report of meeting on Electron Devices
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2010-01-14
    • Related Report
      2009 Annual Research Report
  • [Presentation] InGaAs/InP MISFET2009

    • Author(s)
      Y.Miyamoto
    • Organizer
      Int.Symposium on Silicon Nano Devices in 2030
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2009-10-14
    • Related Report
      2009 Annual Research Report
  • [Presentation] Fabrication of InP/InGaAs Undoped Channel MOSFET with Selectively Regrown N^+-InGaAs Source REgion2009

    • Author(s)
      T. Kanazawa, H. Saito, K. Wakabayashi, T. Tajima, R. Terao, Y. Miyamoto, K. Furuya
    • Organizer
      2009 Int. Conf. Solide State Devices and Materials (SSDM 2009)
    • Place of Presentation
      Sendai
    • Year and Date
      2009-10-07
    • Related Report
      2010 Final Research Report
  • [Presentation] Fabrication of InP/InGaAs Undoped Channel MOSFET with Selectively Regrown N+-InGaAs Source Region2009

    • Author(s)
      金澤徹
    • Organizer
      2009 Int.Conf.Solid State Devices and Materials(SSDM 2009)
    • Place of Presentation
      Miyagi, Japan
    • Year and Date
      2009-10-07
    • Related Report
      2009 Annual Research Report
  • [Presentation] 再成長ソースを有するアンドープチャネルMOSFET2009

    • Author(s)
      若林和也、金澤徹、斎藤尚史、寺尾良輔、田島智宣、宮本恭幸、古屋一仁
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山
    • Year and Date
      2009-09-08
    • Related Report
      2010 Final Research Report
  • [Presentation] 再成長ソースを有するアンドーブチャネルInP/InGaAs MOSFETの電流特性2009

    • Author(s)
      若林和也
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山市
    • Year and Date
      2009-09-08
    • Related Report
      2009 Annual Research Report
  • [Presentation] MOVEP再成長n^+-ソースを有するIII-V族高移動度チャネルMOSFET2009

    • Author(s)
      金澤徹、斎藤尚史、若林和也、寺尾良輔、田島智宣、池田俊介、宮本恭幸、古屋一仁
    • Organizer
      電気学会電気・情報・システム部門大会
    • Place of Presentation
      徳島
    • Year and Date
      2009-09-04
    • Related Report
      2010 Final Research Report
  • [Presentation] MOVPE再成長n^+-ソースを有するIII-V族高移動度チャネルMOSFET2009

    • Author(s)
      金澤徹
    • Organizer
      IEE of Japan(Special Session on Compound Semiconductor Electron Devices for More Moore More than Moore)
    • Place of Presentation
      徳島市
    • Year and Date
      2009-09-04
    • Related Report
      2009 Annual Research Report
  • [Presentation] InGaAs/InP MISFET with epitaxially grown source2009

    • Author(s)
      Y.Miyamoto
    • Organizer
      2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices(AWAD)
    • Place of Presentation
      Busan, Korea
    • Year and Date
      2009-06-25
    • Related Report
      2009 Annual Research Report
  • [Presentation] InP/INGaAs-channel MOSFET with MOVPE Selective Regrown Source2009

    • Author(s)
      T. Kanazawa, K. Wakabayashi, H. Saito, R. Terao, T. Tajima, S. Ikeda, Y. Miyamoto, K.
    • Organizer
      The 21st Int. Conf. Indium Phosphide and Related Materials (IPRM 2009)
    • Place of Presentation
      Newport Beach, USA
    • Year and Date
      2009-05-13
    • Related Report
      2010 Final Research Report
  • [Presentation] InP/InGaAs-channel MOSFET with MOVPE Selective Regrown Source2009

    • Author(s)
      金澤徹
    • Organizer
      The 21st Int.Conf.Indium Phosphide and Related Materials(IPRM2009)
    • Place of Presentation
      Newport Beach, USA
    • Year and Date
      2009-05-13
    • Related Report
      2009 Annual Research Report
  • [Presentation] InP/In_<0.53>Ga_<0.47>As composite channel n-MOSFET with heavily dopedregrown source/drain structure2009

    • Author(s)
      若林和也
    • Organizer
      Int.Symposium on Silicon Nano Devices in 2030
    • Place of Presentation
      Tokyo, Japan
    • Related Report
      2009 Annual Research Report
  • [Patent(Industrial Property Rights)] 電界効果トランジスタ2010

    • Inventor(s)
      宮本恭幸、金澤徹
    • Industrial Property Rights Holder
      東京工業大学
    • Industrial Property Number
      2010-204769
    • Filing Date
      2010-09-13
    • Related Report
      2010 Annual Research Report 2010 Final Research Report

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Published: 2009-04-01   Modified: 2016-04-21  

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