Formation of high-quality poly-Si films by rapid crystallization of sputtered a-Si films
| Project/Area Number |
21760580
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Material processing/treatments
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| Research Institution | Japan Advanced Institute of Science and Technology |
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Principal Investigator |
OHDAIRA Keisuke Japan Advanced Institute of Science and Technology, マテリアルサイエンス研究科, 助教 (40396510)
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| Project Period (FY) |
2009 – 2010
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| Project Status |
Completed (Fiscal Year 2010)
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| Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2010: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2009: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
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| Keywords | 熱処理 / 結晶化 / 多結晶シリコン / 太陽電池 / フラッシュランプアニール / スパッタリング / 簿膜 |
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| Research Abstract |
I have established the method of forming polycrystalline silicon (poly-Si) films without serious thermal damage onto glass substrates by crystallizing precursor amorphous Si (a-Si) films formed by sputtering, safer than chemical vapor deposition (CVD). I have clarified that sputtered a-Si films can be crystallized without Cr adhesion films and show a crystallization mechanism similar to that shown in CVD a-Si films.
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Report
(3 results)
Research Products
(14 results)
