| Budget Amount *help |
¥42,900,000 (Direct Cost: ¥33,000,000、Indirect Cost: ¥9,900,000)
Fiscal Year 2023: ¥5,720,000 (Direct Cost: ¥4,400,000、Indirect Cost: ¥1,320,000)
Fiscal Year 2022: ¥15,600,000 (Direct Cost: ¥12,000,000、Indirect Cost: ¥3,600,000)
Fiscal Year 2021: ¥21,580,000 (Direct Cost: ¥16,600,000、Indirect Cost: ¥4,980,000)
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| Outline of Final Research Achievements |
Our research achievements are as follows.
(1)We achieved high-performance and high reliability oxide semiconductor transistor using Sn-doped IGZO, and realized 1T1C memory fabrication and demonstration by co-integrating with HfO2-based ferroelectric. This work indicates the feasibility of monolithic 3D integrated RAM. (2)We demonstrated 3D vertical InOx channel ferroelectric transistor memory for high capacity and low power memory application. (3) We developed atomic-layer-deposition method for nanosheet oxide semiconductor which is necessary for device size scaling, and achieved high-performance and high-reliability oxide semiconductor transistor.
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