Study on fabrication process of 3-D structured MOS transistor having atomically flat gate insulator/Si interface

• Project/Area Number: 22000010
• Research Category: Grant-in-Aid for Specially Promoted Research
• Allocation Type: Single-year Grants
• Review Section: Science and Engineering; Engineering
• Research Institution: Tohoku University
• Principal Investigator: OHMI Tadahiro 東北大学, 未来科学技術共同研究センター, 名誉教授 (20016463)
• Co-Investigator(Kenkyū-buntansha): HIRAYAMA Masaki 東北大学, 未来科学技術共同研究センター, 准教授 (70250701) ; GOTO Tetsuya 東北大学, 未来科学技術共同研究センター, 准教授 (00359556) ; SUWA Tomoyuki 東北大学, 未来科学技術共同研究センター, 助教 (70431541)
• Project Period (FY): 2010-04-21 – 2015-03-31
• Project Status: Completed (Fiscal Year 2014)
• Budget Amount: ¥616,720,000 (Direct Cost: ¥474,400,000、Indirect Cost: ¥142,320,000); Fiscal Year 2014: ¥62,790,000 (Direct Cost: ¥48,300,000、Indirect Cost: ¥14,490,000); Fiscal Year 2013: ¥67,860,000 (Direct Cost: ¥52,200,000、Indirect Cost: ¥15,660,000); Fiscal Year 2012: ¥78,650,000 (Direct Cost: ¥60,500,000、Indirect Cost: ¥18,150,000); Fiscal Year 2011: ¥213,330,000 (Direct Cost: ¥164,100,000、Indirect Cost: ¥49,230,000); Fiscal Year 2010: ¥194,090,000 (Direct Cost: ¥149,300,000、Indirect Cost: ¥44,790,000)
• Keywords: シリコン / MOSFET / LSI / 半導体製造プロセス / 半導体製造装置 / MOSトランジスタ / シリコン表面平坦化 / プラズマプロセス / 面方位 / ラフネス / シリサイド / 3次元構造

Outline of Final Research Achievements

In this study, the atomically flattening technology of any crystalline silicon surface was developed ; in the result the electrical reliability was drastically improved. By an introduction of this technology, 3-D structured MOS transistor having atomically flat gate insulator/Si interface can be fabricated.

Assessment Rating

Verification Result (Rating)

A-

Research Products

• [Journal Article] Atomically flattening of Si surface of silicon on insulator and isolation-patterned wafers (2015)
  • Author(s): Tetsuya Goto, Rihito Kuroda, Naoya Akagawa, Tomoyuki Suwa, Akinobu Teramoto, Xiang Li, Toshiki Obara, Daiki Kimoto, Shigetoshi Sugawa, Tadahiro Ohmi, Yutaka Kamata, Yuki Kumagai, and Katsuhiko Shibusawa
  • Journal Title: Japanese Journal of Applied Physics Volume: 54 Issue: 4S Pages: 04DA04-04DA04
  • DOI: 10.7567/jjap.54.04da04
  • NAID: 210000144951
  • Peer Reviewed
• [Journal Article] Effect of Composition Ratio on Erbium Silicide Work Function on Different Morphology of Si(100) Surface Changed by Alkaline Etching (2014)
  • Author(s): Hiroaki Tanaka, Tomoyuki Suwa, Akinobu Teramoto, Tsukasa Motoya, Shigetoshi Sugawa, and Tadahiro Ohmi
  • Journal Title: ECS Transactions Volume: 61 Issue: 3 Pages: 47-53
  • DOI: 10.1149/06103.0047ecst
  • Peer Reviewed
• [Journal Article] Flattening Technique of (551) Silicon Surface Using Xe/H2 Plasma (2014)
  • Author(s): Tomoyuki Suwa, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi
  • Journal Title: ECS Transactions Volume: 61 Issue: 2 Pages: 401-407
  • DOI: 10.1149/06102.0401ecst
  • Peer Reviewed
• [Journal Article] Carrier Mobility Characteristics of (100), (110), and (551) Oriented Atomically Flattened Si Surfaces for Fin Structure Design of Multi-gate Metal-Insulator-Silicon Field-Effect Transistors (2014)
  • Author(s): Rihito Kuroda, Yukihisa Nakao, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi
  • Journal Title: Japanese Journal of Applied Physics Volume: 53 Issue: 4S Pages: 04EC04-04EC04
  • DOI: 10.7567/jjap.53.04ec04
  • NAID: 210000143558
  • Peer Reviewed
• [Journal Article] Schottky Barrier Height Between Erbium Silicide and Various Morphology of Si (100) Surface Changed by Alkaline Etching (2013)
  • Author(s): Hiroaki Tanaka, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi
  • Journal Title: ECS Transactions Volume: 58 Issue: 7 Pages: 349-354
  • DOI: 10.1149/05807.0349ecst
  • Peer Reviewed
• [Journal Article] A Test Circuit for Extremely Low Gate Leakage Current Measurement of 10 aA for 80 000 MOSFETs in 80 s (2013)
  • Author(s): Takuya Inatsuka, Yuki Kumagai, Rihito Kuroda, Akinobu Teramoto, Tomoyuki Suwa, Shigetoshi Sugawa, and Tadahiro Ohmi
  • Journal Title: IEEE Transactions on Semiconductor Manufacturing Volume: 26 Issue: 3 Pages: 288-295
  • DOI: 10.1109/tsm.2013.2260568
  • Peer Reviewed
• [Journal Article] l/f noise of accumulation mode p-and n-MOSFETs (2013)
  • Author(s): Philippe Gaubert, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi
  • Journal Title: Proceedings of 22nd International Conference on Noise and Fluctuations Volume: 1 Pages: 26-29
  • DOI: 10.1109/icnf.2013.6578879
  • Peer Reviewed
• [Journal Article] Angle-resolved photoelectron spectroscopy study on interfacial transition layer and oxidation-induced residual stress in Si (100) substrate near the interface (2013)
  • Author(s): Tomoyuki Suwa, Akinobu Teramoto, Kohki Nagata, Atsushi Ogura, Hiroshi Nohira, Takayuki Muro, Toyohiko Kinoshita, Shigetoshi Sugawa, Tadahiro Ohmi, and Takeo Hattori
  • Journal Title: Microelectronic Engineering Volume: 109 Pages: 197-199
  • DOI: 10.1016/j.mee.2013.03.004
  • Peer Reviewed
• [Journal Article] Effect of Composition Rate on Erbium Silicide Work Function on Different Silicon Surface Orientation (2013)
  • Author(s): Hiroaki Tanaka, Akinobu Teramoto, Tsukasa Motoya, Shigetoshi Sugawa, and Tadahiro Ohmi
  • Journal Title: ECS Transactions Volume: 53 Issue: 1 Pages: 343-350
  • DOI: 10.1149/05301.0343ecst
  • Peer Reviewed
• [Journal Article] Chemical Structure of Interfacial Transition Layer Formed on Si(100) and Its Dependence on Oxidation Temperature, Annealing in Forming Gas, and Difference in Oxidizing Species (2013)
  • Author(s): Tomoyuki Suwa
  • Journal Title: Japanese Journal of Applied Physics Volume: 52 Issue: 3R Pages: 031302-031302
  • DOI: 10.7567/jjap.52.031302
  • NAID: 40019616826
  • Peer Reviewed
• [Journal Article] Effect of Erbium Silicide Crystallinity for Low Barrier Contact between Erbium Silicide and n-type Silicon (2012)
  • Author(s): Hiroaki Tanaka
  • Journal Title: ECS Transactions Volume: 50 Pages: 343-348
  • Peer Reviewed
• [Journal Article] Comprehensive Study on Chemical Structures of Compositional Transition Layer at SiO2/Si(100) Interface (2012)
  • Author(s): Tomoyuki Suwa
  • Journal Title: ECS Transactions Volume: 50 Pages: 313-318
  • Peer Reviewed
• [Journal Article] Electrical Properties of Silicon Nitride Using High Density and Low Plasma Damage PECVD Formed at 400℃ (2012)
  • Author(s): Yukihisa Nakao
  • Journal Title: ECS Transactions Volume: 50 Pages: 421-428
  • Peer Reviewed
• [Journal Article] Low Work Function between Erbium Silicide and n-type Silicon Controlled by Cap Film Stress (2012)
  • Author(s): Hiroaki Tanaka
  • Journal Title: ECS Transactions Volume: 45 Pages: 371-378
  • Peer Reviewed
• [Journal Article] Influence of Forming Gas Annealing on SiO2/Si(100) Interface Structures Formed Utilizing Oxygen Molecules Different From That Utilizing Oxygen Radicals (2012)
  • Author(s): Tomoyuki Suwa
  • Journal Title: ECS Transactions Volume: 45 Pages: 453-460
  • Peer Reviewed
• [Journal Article] Hole Mobility in Accumulation Mode Metal-Oxide-Semiconductor Field-Effect Transistors (2012)
  • Author(s): Philippe Gaubert
  • Journal Title: Japanese Journal of Applied Physics Volume: 51 Issue: 4S Pages: 04DC07-04DC07
  • DOI: 10.1143/jjap.51.04dc07
  • Peer Reviewed
• [Journal Article] On the Interface Flattening Effect and Gate Insulator Breakdown Characteristic of Radical Reaction Based Insulator Formation Technology (2012)
  • Author(s): Rihito Kuroda
  • Journal Title: Japanese Journal of Applied Physics Volume: 51
  • Peer Reviewed
• [Journal Article] Highly Reliable Radical SiO_2 Films on Atomically Flat Silicon Surface Formed by Low Temperature Pure Ar Annealing (2011)
  • Author(s): Xiang Li
  • Journal Title: Japanese Journal of Applied Physics Volume: 50
  • Peer Reviewed
• [Journal Article] Different Properties of Erbium suicides on Si(100) and Si(551) Orientation Stirfaces (2011)
  • Author(s): Hiroaki Tanaka
  • Journal Title: ECS Transactions Volume: 41 Pages: 365-373
  • Peer Reviewed
• [Journal Article] Gate SiO_2 Film Integrity on Ultra-Pure Argon Anneal (100) Silicon Surface (2011)
  • Author(s): Akinobu Teramoto
  • Journal Title: ECS Transactions Volume: 41 Pages: 147-156
  • Peer Reviewed
• [Journal Article] Science-based New Silicon Technologies Exhibiting Super High Performance due to Radical-reaction-based Semiconductor Manufacturing (2011)
  • Author(s): Tadahiro Ohmi
  • Journal Title: Journal of the Korean Physical Society Volume: 59 Pages: 391-401
  • Peer Reviewed
• [Journal Article] Formation speed of atomically flat surface on Si(100) in ultra-pure argon (2011)
  • Author(s): Xiang Li
  • Journal Title: Microelectronic Engineering Volume: 88 Pages: 3133-3139
  • Peer Reviewed
• [Journal Article] Clear Difference between the Chemical Structure of SiO_2/Si Interfaces Formed Using Oxygen Radicals versus Oxygen Molecules (2011)
  • Author(s): Tomoyuki Suwa
  • Journal Title: ECS Transactions Volume: 35 Pages: 115-122
  • Peer Reviewed
• [Journal Article] Pr_3Si_6N_<11>/Si_3N_4 Stacked High-k Gate Dielectrics with High Quality Ultrathin Si_3N_4 Interfacial Layers (2011)
  • Author(s): Tadahiro Ohmi
  • Journal Title: ECS Transactions Volume: 35 Pages: 275-284
  • Peer Reviewed
• [Journal Article] Impact of Channel Direction Dependent Low Field Hole Mobility on (100) Orientation Silicon Surface (2011)
  • Author(s): Rihito Kuroda
  • Journal Title: Japanese Journal of Applied Physics Volume: 50
  • Peer Reviewed
• [Journal Article] Low Contact Resistivity with Low Silicide/p^+-Silicon Schottky Barrier for High-Performance p-Channel Metal-Oxide-Silicon Field Effect Transistors (2010)
  • Author(s): Hiroaki Tanaka, Tatsunori Isogai, Tetsuya Goto, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi
  • Journal Title: Japanese Journal of Applied Physics Volume: 49
  • NAID: 210000068161
  • Peer Reviewed
• [Journal Article] Crystallographic orientation dependence of compositional transition and valence band offset at SiO_2/Si interface formed using oxygen radicals (2010)
  • Author(s): T.Suwa, A.Teramoto, Y.Kumagai, K.Abe, X.Li, Y.Nakao, M.Yamamoto, Y.Kato, T.Muro, T.Kinoshita, T.Ohmi, T.Hattori
  • Journal Title: Journal of Applied Physics Letters Volume: 96 Pages: 173103-173104
  • NAID: 110008106358
  • Peer Reviewed
• [Journal Article] Impact of Work Function Optimized S/D Silicide Contact for High Current Drivability CMOS (2010)
  • Author(s): Y.Nakao, R.Kuroda, H.Tanaka, T.Isogai, A.Teramoto, S.Sugawa, T.Ohmi
  • Journal Title: ECS Transactions Volume: 28 Pages: 315-324
  • Peer Reviewed
• [Journal Article] Atomically Flattening Technology at 850℃ for Si(100) Surface (2010)
  • Author(s): X.Li, T.Suwa, A.Teramoto, R.Kuroda, S.Sugawa, T.Ohmi
  • Journal Title: ECS Transactions Volume: 28 Pages: 299-309
  • Peer Reviewed
• [Journal Article] Relation Between the Mobility, 1/f Noise, and Channel Direction in MOSFETs Fabricated on (100) and (110) Silicon-Oriented Wafers (2010)
  • Author(s): Philippe Gaubert, Akinobu Teramoto, Weitao Cheng, Tadahiro Ohmi
  • Journal Title: IEEE Transactions on Electron Devices Volume: 57 Pages: 1597-1607
  • Peer Reviewed
• [Presentation] 応用物理学会優秀論文賞受賞記念講演"Chemical Structure of Interfacial Transition Layer Formed on Si(100) and Its Dependence on Oxidation Temperature, Annealing in Forming Gas, and Difference in Oxidizing Species" (2014)
  • Author(s): 諏訪智之、寺本章伸、熊谷勇喜、阿部健一、李翔、中尾幸久、山本雅士、野平博司、室隆桂之、木下豊彦、須川成利、大見忠弘、服部健雄
  • Organizer: 第75回応用物理学会秋季学術講演会
  • Place of Presentation: 北海道大学, 札幌
  • Year and Date: 2014-09-19
• [Presentation] Atomically Flattening of Si Surface of SOI and Isolation-patterned Wafers (2014)
  • Author(s): T. Goto, R. Kuroda, N. Akagawa, T. Suwa, A. Teramoto, X. Li, S. Sugawa, T. Ohmi, Y. Kumagai, Y. Kamata, and K. Sibusawa
  • Organizer: The 2014 International Conference on Solid State Devices and Materials
  • Place of Presentation: Tsukuba International Congress Center, つくば
  • Year and Date: 2014-09-09
• [Presentation] Flattening Technique of (551) Silicon Surface Using Xe/H2 Plasma (2014)
  • Author(s): Tomoyuki Suwa, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi
  • Organizer: 225th Meeting of The Electrochemical Society
  • Place of Presentation: Hilton Orlando Bonnet Creek, Orlando, USA
  • Year and Date: 2014-05-14
• [Presentation] Effect of Composition Ratio on Erbium Silicide Work Function on Different Morphology of Si(100) Surface Changed by Alkaline Etching (2014)
  • Author(s): Hiroaki Tanaka, Tomoyuki Suwa, Akinobu Teramoto, Tsukasa Motoya, Shigetoshi Sugawa, and Tadahiro Ohmi
  • Organizer: 225th Meeting of The Electrochemical Society
  • Place of Presentation: Hilton Orlando Bonnet Creek, Orlando, USA
  • Year and Date: 2014-05-13
• [Presentation] Schottky barrier height between erbium silicide and various morphology of Si (100) surface changed by alkaline etching (2013)
  • Author(s): H. Tanaka, A. Teramoto, S. Sugawa, T. Ohmi
  • Organizer: 224th Meeting of The Electrochemical Society
  • Place of Presentation: San Francisco, USA
  • Year and Date: 2013-10-29
• [Presentation] Detection of oxidation-induced compressive stress in Si (100) substrate near the SiO2/Si interface with atomic-scale resolution (2013)
  • Author(s): T. Suwa, K. Nagata, H. Nohira, K. Nakajima, A. Teramoto, A. Ogura, K. Kimura, T. Muro, T. Kinoshita, S. Sugawa, T. Hattori, T. Ohmi
  • Organizer: The 2013 International Conference on Solid State Devices and Materials
  • Place of Presentation: Fukuoka, Japan
  • Year and Date: 2013-09-26
• [Presentation] Carrier Mobility on (100), (110), and (551) Oriented Atomically Flattened Si Surfaces for Multi-gate MOSFETs Device Design (2013)
  • Author(s): Rihito Kuroda, Yukihisa Nakao, Akinobu Teramoto, Shigetoshi Sugawa and Tadahiro Ohmi
  • Organizer: The 2013 International Conference on Solid State Devices and Materials
  • Place of Presentation: Fukuoka, Japan
  • Year and Date: 2013-09-25
• [Presentation] Angle-Resolved Photoelectron Spectroscopy Study on Interfacial Transition Layer and Oxidation-Induced Residual Stress in Si (100) Substrate Near the Interface (2013)
  • Author(s): T. Suwa, A. Teramoto, K. Nagata, A. Ogura, T. Muro, T. Kinoshita, T. Ohmi, and T. Hattori
  • Organizer: 18th Conference of "Insulating Films on Semiconductors"
  • Place of Presentation: Cracow, Poland
  • Year and Date: 2013-06-26
• [Presentation] Effect of composition rate on erbium silicide work function on different silicon surface orientation (2013)
  • Author(s): H. Tanaka, A. Teramoto, T. Motoya, S. Sugawa, T. Ohmi
  • Organizer: 223rd Meeting of The Electrochemical Society
  • Place of Presentation: Toronto, Canada
  • Year and Date: 2013-05-15
• [Presentation] 1/f noise of accumulation mode p- and n-MOSFETs (2013)
  • Author(s): Philippe Gaubert, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi
  • Organizer: 22nd International Conference on Noise and Fluctuations
  • Place of Presentation: Montpellier, France
• [Presentation] Radical Oxidation and Radical Nitridation for High Integrity Gate Insulator Films on Any Crystal Orientation Silicon Surface for Super High Performance 3D MOS Transistors (2012)
  • Author(s): Tadahiro Ohmi
  • Organizer: 2012 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES
  • Place of Presentation: Shanghai, China(招待講演)
  • Year and Date: 2012-03-18
• [Presentation] Different properties of erbium silicides on Si(100) and Si(551) orientation surfaces (2011)
  • Author(s): Hiroaki Tanaka
  • Organizer: 220th Meeting of The Electrochemical Society
  • Place of Presentation: Boston, USA
  • Year and Date: 2011-10-13
• [Presentation] Gate SiO_2 Film Integrity on Ultra-Pure Argon Anneal (100) Silicon Surface (2011)
  • Author(s): Akinobu Teramoto
  • Organizer: 220th Meeting of The Electrochemical Society
  • Place of Presentation: Boston, USA
  • Year and Date: 2011-10-10
• [Presentation] High Quality and Low Thermal Budget Silicon Nitride Deposition Using PECVD for Gate Spacer, Silicide Block and Contact Etch Stopper (2011)
  • Author(s): Yukihisa Nakao
  • Organizer: 2011 International Conference on SOLID STATE DEVICES AND MATERIALS
  • Place of Presentation: Nagoya
  • Year and Date: 2011-09-29
• [Presentation] On the Si Surface Flattening Effect and Gate Insulator Breakdown Characteristic of Radical Reaction Based Insulator Formation Technology (2011)
  • Author(s): Rihito Kuroda
  • Organizer: 2011 International Conference on SOLID STATE DEVICES AND MATERIALS
  • Place of Presentation: Nagoya
  • Year and Date: 2011-09-29
• [Presentation] Clear Difference between Chemical Structure of SiO_2/Si Interface Formed Using Oxygen Radicals and That Formed Using Oxygen Molecules (2011)
  • Author(s): Tomoyuki Suwa
  • Organizer: 2011 International Conference on SOLID STATE DEVICES AND MATERIALS
  • Place of Presentation: Nagoya
  • Year and Date: 2011-09-29
• [Presentation] Science Based New Silicon Technologies Exhibiting Super High Speed Performance Over 100GHz Clock Rate (2011)
  • Author(s): Tadahiro Ohmi
  • Organizer: 30^<th> Electronic Materials Symposium
  • Place of Presentation: Shiga(招待講演)
  • Year and Date: 2011-06-29
• [Presentation] Pr_3Si_6N_<11>/Si_3N_4 Stacked High-k Gate Dielectrics with High Quality Ultrathin Si_3N_4 Interfacial Layers (2011)
  • Author(s): Tadahiro Ohmi
  • Organizer: 219th Meeting of The Electrochemical Society
  • Place of Presentation: Montreal, Canada
  • Year and Date: 2011-05-03
• [Presentation] Clear difference between the chemical structure of SiO_2/Si interface formed using oxygen radicals and that formed using oxygen molecules (2011)
  • Author(s): Tomoyuki Suwa
  • Organizer: 219th Meeting of The Electrochemical Society
  • Place of Presentation: Montreal, Canada
  • Year and Date: 2011-05-02
• [Presentation] Science Based New Silicon Technologies Exhibiting Super High Performance due to Radical Reaction Based Semiconductor Manufacturing (2011)
  • Author(s): Tadahiro Ohmi
  • Organizer: The 18^<th> Korean Conference on Semiconductors
  • Place of Presentation: Jeju, KOREA
  • Year and Date: 2011-02-17
• [Presentation] High reliable SiO_2 Films on Atomically Flat Silicon Surface Formed by Low Temperature Pure Ar Annealing (2011)
  • Author(s): X.Li, R.Kuroda, T.Suwa, A.Teramoto, S.Sugawa, T.Ohmi
  • Organizer: 2011 Interanational Workshop on Dielectric Thin Films For Future Electron Devices : Science and Technology
  • Place of Presentation: 東京
  • Year and Date: 2011-01-20
• [Presentation] Ultra-low Series Resistance W/ErSi_2/n^+-Si and W/Pd_2Si/p^+-Si S/D Electrodes for Advanced CMOS Platform (2010)
  • Author(s): Rihito Kuroda, Hiroaki Tanaka, Yukihisa Nakao, Akinobu Teramoto, Naoto Miyamoto, Shigetoshi Sugawa, Tadahiro Ohmi
  • Organizer: IEEE International ELECTRON DEVICES meeting (IEDM) 2010
  • Place of Presentation: San Francisco, CA, USA
  • Year and Date: 2010-12-08
• [Presentation] Impact of Channel Direction Dependent Low Field Hole Mobility on Si(100) (2010)
  • Author(s): Rihito Kuroda, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi
  • Organizer: the 2010 International Conference on SOLID STATE DEVICES AND MATERIALS
  • Place of Presentation: 東京
  • Year and Date: 2010-09-22
• [Presentation] Science Based New Silicon Devices Exhibiting Super High Performance by Very New Plasma Equipment Completely Free From Damages (2010)
  • Author(s): Tadahiro Ohmi
  • Organizer: Final Program of World Automation Congress 2010
  • Place of Presentation: 神戸
  • Year and Date: 2010-09-20
• [Presentation] Effect of erbium silicide crystallinity for low barrier contact between erbium silicide and n-type silicon
  • Author(s): Hiroaki Tanaka
  • Organizer: 222th Meeting of The Electrochemical Society
  • Place of Presentation: Honolulu, USA
• [Presentation] Comprehensive Study on Chemical Structures of Compositional Transition Layer at SiO2/Si(100) Interface
  • Author(s): Tomoyuki Suwa
  • Organizer: 222th Meeting of The Electrochemical Society
  • Place of Presentation: Honolulu, USA
• [Presentation] Low frequency noise assessment of accumulation Si p-MOSFETs
  • Author(s): Philippe Gaubert
  • Organizer: 2012 International Conference on SOLID STATE DEVICES AND MATERIALS
  • Place of Presentation: Kyoto
• [Presentation] Dependence of chemical structures of transition layer at SiO2/Si(100) interface on oxidation temperature, annealing in forming gas, and oxidizing species
  • Author(s): Tomoyuki Suwa
  • Organizer: 2012 International Conference on SOLID STATE DEVICES AND MATERIALS
  • Place of Presentation: Kyoto
• [Presentation] The role of the temperature on the scattering mechanisms limiting the electron mobility in metal-oxide-semiconductor field-effect-transistors fabricated on (110) silicon-oriented wafers
  • Author(s): Philippe Gaubert
  • Organizer: 42nd European Solid-State Device Research Conference
  • Place of Presentation: Bordeaux, France
• [Presentation] 100nm-gate-length Normally-off Accumulation-Mode FD-SOI MOSFETs for Low Noise Analog/RF Circuits
  • Author(s): Hidetoshi Utsumi
  • Organizer: 2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
  • Place of Presentation: Okinawa
• [Presentation] Electrical Properties of Silicon Nitride Using High Density and Low Plasma Damage PECVD Formed at 400℃
  • Author(s): Yukihisa Nakao
  • Organizer: 221th Meeting of The Electrochemical Society
  • Place of Presentation: Seattle, USA
• [Presentation] Changes in SiO2/Si(100) Interface Structure Induced by Forming Gas Annealing
  • Author(s): Tomoyuki Suwa
  • Organizer: 221th Meeting of The Electrochemical Society
  • Place of Presentation: Seattle, USA
• [Presentation] Low Work Function between Erbium Silicide and n-type Silicon Controlled by Cap Film Stress
  • Author(s): Hiroaki Tanaka
  • Organizer: 221th Meeting of The Electrochemical Society
  • Place of Presentation: Seattle, USA
• [Remarks] 東北大学未来科学技術共同研究センター未来情報産業研究館ホームページ
  • URL: http://www.fff.niche.tohoku.ac.jp/