P-N Junction Effect of Metal Oxides inside Carbon Nanotubes on NO_2 detection
| Project/Area Number |
22510115
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Nanomaterials/Nanobioscience
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| Research Institution | Osaka University (2012)
Ritsumeikan University (2010-2011) |
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Principal Investigator |
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| Project Period (FY) |
2010 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2012: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2011: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2010: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
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| Keywords | ナノ粒子・ナノチューブ / NO_2 / 酸化物-MWCNT複合体 / p-n接合効果 / 空間電荷層 / 走査トンネル分光法 / 酸化物内包効果 / 酸化物-CNTの接合界面 / 酸化物ナノ粒子 / カーボンナノチューブ / p-n接合 |
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| Research Abstract |
N-type semiconductor oxides with different band gap (TiO_2: 3.0 eV, SnO_2: 3.7 eV) were deposited inside p-type carbon nanotubes (CNTs). It was clarified that the resistance changes of these materials to 1 ppm NO_2 depended on band-gap of oxides corresponded to the magnitude of p-n junction. Besides, the current differentiated by bias voltage was examined for CNTs and SnO_2-CNTs by means of scanning tunneling spectroscopy (STS). As the result, the formation of p-n junction for SnO_2-CNTs was confirmed from the band-gap evaluated from CNTs and SnO_2-CNTs.
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Report
(4 results)
Research Products
(46 results)
