| Budget Amount *help |
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2012: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2011: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2010: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
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| Research Abstract |
N-type semiconductor oxides with different band gap (TiO_2: 3.0 eV, SnO_2: 3.7 eV) were deposited inside p-type carbon nanotubes (CNTs). It was clarified that the resistance changes of these materials to 1 ppm NO_2 depended on band-gap of oxides corresponded to the magnitude of p-n junction. Besides, the current differentiated by bias voltage was examined for CNTs and SnO_2-CNTs by means of scanning tunneling spectroscopy (STS). As the result, the formation of p-n junction for SnO_2-CNTs was confirmed from the band-gap evaluated from CNTs and SnO_2-CNTs.
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