Creation of Nano Organic Semiconducting Films Densified by IsostaticPressing and Their Bending Strength Analysis Using Indentation Testing
Project/Area Number |
22560094
|
Research Category |
Grant-in-Aid for Scientific Research (C)
|
Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Materials/Mechanics of materials
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Research Institution | Ibaraki National College of Technology |
Principal Investigator |
KANARI Moriyasu 茨城工業高等専門学校, 電子制御工学科, 准教授 (70331981)
|
Project Period (FY) |
2010 – 2012
|
Project Status |
Completed (Fiscal Year 2012)
|
Budget Amount *help |
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2012: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2011: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2010: ¥3,380,000 (Direct Cost: ¥2,600,000、Indirect Cost: ¥780,000)
|
Keywords | マイクロ材料力学 / 有機・分子エレクトロニクス / ナノインデンテーション / 曲げ強度 / 密度 / 弾性率 / 硬さ / 等方加圧 / 有機半導体 |
Research Abstract |
Organic semiconducting films with some hundreds nanometers thickness are promising materials for EL devices, solar cells, and thin film transistors. In the present study, the films were densified by the isostatic press. And at the maximum, elastic modulus, hardness, and bending strength of the films were improved by factors of 2.3, and 2.8 times, and 26 % respectively. We also found that annealing was effective for the pressurizing characteristics of the films. As the result, mechanical properties of the films were strongly dominated by the porosity of the films.
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Report
(4 results)
Research Products
(14 results)