| Project/Area Number |
22560103
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Production engineering/Processing studies
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| Research Institution | Saitama University |
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Principal Investigator |
SHIBUTANI Hideo 埼玉大学, 大学院・理工学研究科, 助教 (80303709)
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| Project Period (FY) |
2010 – 2012
|
| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2012: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2011: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2010: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
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| Keywords | 超平滑化 / メカノケミカル反応 / 第1原理計算 / 電子状態 / 研磨 / シリコン / 第一原理 / シミュレーション / 第一原理計算 / 加工技術 / ポリシング / 超精密 |
|---|
| Research Abstract |
In this study, the electronic state of an abrasive-work interface neighborhood was calculated by a first principles calculation. In these results, in case of Silica abrasives which the surface hydroxyl contribute the removal action of the Si wafer in a polish, the internal electronic states of the Si wafer were almost same when Silica abrasives were approaching to Si wafer surface. But, Barium oxide abrasives which act as the solid phase reaction in a polish, internal electronic states of the Si wafer, especially the first and second layer of Si wafer.
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