Development ofnovel heterostructure materials for high performance green-range semiconductor laser diodes

• Project/Area Number: 22560301
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Sophia University
• Principal Investigator: NOMURA Ichirou 上智大学, 理工学部, 准教授 (00266074)
• Project Period (FY): 2010 – 2012
• Project Status: Completed (Fiscal Year 2012)
• Budget Amount: ¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000); Fiscal Year 2012: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000); Fiscal Year 2011: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000); Fiscal Year 2010: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
• Keywords: 電気 / 電子材料 / 半導体レーザ / クラッド層 / 酸化インジウムスズ / 透明導電膜 / コンタクト層 / ZnTe / ZnSeTe / 超格子 / レーザ / スパッタ法 / 導波路 / 光閉じ込め / II-VI族 / ドーピング / 二次イオン質量分析 / フォトルミネッセンス測定 / C-V測定 / 変調ドーピング / 均一ドーピング / BeZnTe / MgSe/BeZnTe超格子

Research Abstract

Novel cladding layer materials were developed to realize high-performance green semiconductor laser diodes (LDs). II-VI compound semiconductors on InP substrates and indium tin oxide (ITO) usually used as a transparent electrode were investigated as the cladding layer materials. New LD structures with ITO p-cladding layers wereproposed. From theoretical analysis of the LD structure, it was shown that sufficient optical waveguide could be realized. Deposition conditions of ITO and contact layer materials were investigated, which revealed optimum conditions for high device performances

Research Products

• [Journal Article] Proposal of BeZnTe/ZnSeTe superlattice quasi-quaternaries on InP substrates for yellow/green light emitting devices (2013)
  • Author(s): Toshiki Kobayashi
  • Journal Title: Journal of Crystal Growth Volume: in press Pages: 263-265
  • DOI: 10.1016/j.jcrysgro.2012.12.074
  • Peer Reviewed
• [Journal Article] Photopumped lasing characteristics in green-to-yellow range for BeZnSeTe II-VI compound quaternary double heterostructures grown on InP substrates (2011)
  • Author(s): I. Nomura, Y. Sawafuji, and K. Kishino
  • Journal Title: Jpn. J. Appl. Phys Volume: Vol. 50 Issue: 3R Pages: 031201-031201
  • DOI: 10.1143/jjap.50.031201
  • NAID: 210000070082
  • Peer Reviewed
• [Journal Article] Photopumped lasing characteristics in green-to-yellow range for BeZnSeTe II-VI compound quaternary double heterostructures grown on InP substrates (2011)
  • Author(s): Ichirou Nomura
  • Journal Title: Japanese Journal of Applied Physics Volume: 50
  • NAID: 210000070082
  • Peer Reviewed
• [Journal Article] Proposal of BeZnTe/ZnSeTe superlattice quasi-quaternaries on InP substrates for yellow/green light emitting devices
  • Author(s): T. Kobayashi, I. Nomura, K. Murakami, and K. Kishino
  • Journal Title: J. Cryst. Growth
  • URL: http://www.sciencedirect.com/science/article/pii/S002202481200958X
  • Peer Reviewed
• [Presentation] InP 基板上 BeZnSeTe 系II-VI族半導体光デバイスにおける ZnSeTe p 側コンタクト層の効果 (2013)
  • Author(s): 高松眞吾,野村一郎,小林俊輝,岸野克巳
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川
  • Year and Date: 2013-03-27
• [Presentation] InP基板上BeZnSeTe系II-VI族半導体光デバイスにおけるZnSeTe p側コンタクト層の効果 (2013)
  • Author(s): 高松眞吾
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川
• [Presentation] Proposal of BeZnTe/ZnSeTe superlattice quasi-quaternaries on InP substrates for yellow/green light-emitting devices (2012)
  • Author(s): T. Kobayashi, I. Nomura, K. Murakami, and K. Kishino
  • Organizer: The 17th International Conference on Molecular Beam Epitaxy
  • Place of Presentation: Nara, Japan
  • Year and Date: 2012-09-27
• [Presentation] InP 基板上BeZnTe/ZnSeTe 超格子擬似混晶における発光波長制御 (2012)
  • Author(s): 小林俊輝,村上佳介,野村一郎,白石智裕,高松眞吾,岸野克巳
  • Organizer: 第73回応用物理学会学術講演会
  • Place of Presentation: 松山
  • Year and Date: 2012-09-14
• [Presentation] InP 基板上ZnCdSe/BeZnTe タイプII超格子におけるフォトルミネッセンス発光特性の評価 (2012)
  • Author(s): 村上佳介,小林俊輝,野村一郎,白石智裕,高松眞吾,岸野克巳
  • Organizer: 第73回応用物理学会学術講演会
  • Place of Presentation: 松山
  • Year and Date: 2012-09-14
• [Presentation] Development of II-VI compound semiconductors on InP substrates for green and yellow lasers (2012)
  • Author(s): I. Nomuraand K. Kishino
  • Organizer: The 1st Annual World Congress of Advanced Materials Conference
  • Place of Presentation: Beijing, China
  • Year and Date: 2012-06-08
• [Presentation] InP 基板上 BeZnTe/ZnSeTe超格子擬似混晶の作製と評価 (2012)
  • Author(s): 小林俊輝,野村一郎,村石一生,村上圭祐,岸野克巳
  • Organizer: 第59回応用物理学関係連合講演会
  • Place of Presentation: 東京
  • Year and Date: 2012-03-18
• [Presentation] InP基板上BeZnTe/ZnSeTe超格子擬似混晶の作製と評価 (2012)
  • Author(s): 小林俊輝
  • Organizer: 第59回応用物理学関係連合講演会
  • Place of Presentation: 東京
  • Year and Date: 2012-03-18
• [Presentation] Development of II-VI compound semiconductors on InP substrates for green and yellow lasers (2012)
  • Author(s): Ichirou Nomura
  • Organizer: The 1st Annual World Congress of Advanced Materials Conference (WCAM-2012)
  • Place of Presentation: Beijing, China
• [Presentation] Proposal of BeZnTe/ZnSeTe superlattice quasi-quaternaries on InP substrates for yellow/green light-emitting devices (2012)
  • Author(s): Toshiki Kobayashi
  • Organizer: The 17th International Conference on Molecular Beam Epitaxy (MBE2012)
  • Place of Presentation: Nara, Japan
• [Presentation] InP基板上BeZnTe/ZnSeTe超格子擬似混晶における発光波長制御 (2012)
  • Author(s): 小林俊輝
  • Organizer: 第73回応用物理学会学術講演会
  • Place of Presentation: 愛媛
• [Presentation] InP基板上ZnCdSe/BeZnTeタイプII超格子におけるフォトルミネッセンス発光特性の評価 (2012)
  • Author(s): 村上佳介
  • Organizer: 第73回応用物理学会学術講演会
  • Place of Presentation: 愛媛
• [Presentation] InP 基板上 BeZnSeTeII-VI族半導体混晶の発光特性評価 (2010)
  • Author(s): 村石一生,野村一郎,バディヴェル ラメッシュ,澤藤豊,岸野克巳
  • Organizer: 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎
  • Year and Date: 2010-09-14
• [Presentation] InP基板上BeZnSeTe II-VI族半導体混晶の発光特性評価 (2010)
  • Author(s): 村石一生
  • Organizer: 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎
  • Year and Date: 2010-09-14