| Project/Area Number |
22560327
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | University of Fukui |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
YAMAMOTO Akio 福井大学, 大学院・工学研究科, 教授 (90210517)
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| Project Period (FY) |
2010 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2012: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2011: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2010: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
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| Keywords | 電子デバイス / 集積回路 / 電子デバイス・電子機器 / 電子デバイス・集積回路 / GaN / MIS / FET / HEMT / 絶縁膜 / 窒化物半導体 / トランジスタ |
|---|
| Research Abstract |
AlGaN/GaN MISHEMTs with various dielectric materials, such as SiN, Al_2O_3, HfO_2, and ZrO_2, have been fabricated for stable high temperature operation. The ZrO_2/Al_2O_3dual dielectric film MISHEMT exhibited a gate leakage current of 1x10^-10A/mm at room temperature, which was about 3 orders of magnitude lower than that for the Schottky-gated AlGaN/GaN HEMT. The amount of increse in the gate leakage current from RT to 300 ℃ for the ZrO_2/Al_2O_3dual dielectric film MISHEMT was the lowest among devices fabricated in this work. These results indicate that the proposed ZrO_2/Al_2O_3dual dielectric film MISHEMT is promising for reducing the gate leakage current at high temperatures.
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