Study on High-Temperature and High-Frequency Electronic Devices
| Project/Area Number |
22560327
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | University of Fukui |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
YAMAMOTO Akio 福井大学, 大学院・工学研究科, 教授 (90210517)
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| Project Period (FY) |
2010 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2012: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2011: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2010: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
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| Keywords | 電子デバイス / 集積回路 / 電子デバイス・電子機器 / 電子デバイス・集積回路 / GaN / MIS / FET / HEMT / 絶縁膜 / 窒化物半導体 / トランジスタ |
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| Research Abstract |
AlGaN/GaN MISHEMTs with various dielectric materials, such as SiN, Al_2O_3, HfO_2, and ZrO_2, have been fabricated for stable high temperature operation. The ZrO_2/Al_2O_3dual dielectric film MISHEMT exhibited a gate leakage current of 1x10^-10A/mm at room temperature, which was about 3 orders of magnitude lower than that for the Schottky-gated AlGaN/GaN HEMT. The amount of increse in the gate leakage current from RT to 300 ℃ for the ZrO_2/Al_2O_3dual dielectric film MISHEMT was the lowest among devices fabricated in this work. These results indicate that the proposed ZrO_2/Al_2O_3dual dielectric film MISHEMT is promising for reducing the gate leakage current at high temperatures.
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Report
(4 results)
Research Products
(32 results)
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[Presentation] Comparative hightemperature DC characterization of HEMTs with GaN and AlGaN channel layers2010
Author(s)
M. Hatano, N. Kunishio, H. Chikaoka, J. Yamazaki, Z. B. Makhzani, N. Yafune, K. Sakuno, S. Hashimoto, K. Akita, Y. Yamamoto, and M. Kuzuhara
Organizer
CS-MANTECH
Place of Presentation
Portland
Related Report
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