| Project/Area Number |
22560341
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Tohoku Gakuin University |
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Principal Investigator |
HARA Akito 東北学院大学, 工学部, 教授 (20417398)
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| Co-Investigator(Renkei-kenkyūsha) |
KITAHARA Kuninori 島根大学, 総合理工学部, 教授 (60304250)
SUZUKI Hitoshi 東北学院大学, 工学部, 准教授 (70351319)
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| Project Period (FY) |
2010 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2012: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2011: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2010: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
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| Keywords | 電子デバイス・集積回路 / 薄膜トランジスタ / TFT / poly-Si / ダブルゲート / 多結晶シリコン / 電子デバイス・機器 / マイクロ・ナノデバイス / 先端機能デバイス / ディスプレイ / 他結晶シリコン |
|---|
| Research Abstract |
Self-aligned planar metal double-gate n-channel (n-ch) and p-channel (p-ch) polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) consisting of an embedded bottom metal gate, a top metal gate fabricated by a self-alignment process, and a lateral poly-Si film with a grain size greater than 2 μm were fabricated on a glass substrate at 550 ℃. The TFTs are called embedded metal double-gate (E-MeDG) low-temperature (LT) poly-Si TFTs. The nominal field-effect mobility and its subthreshold slope are, respectively, 530 cm2/Vs and 140 mV/dec for n-ch E-MeDG LT poly-Si TFTs, and 135 cm2/Vs and 150 mV/dec for p-ch TFTs. The superior performance of the E-MeDG LT poly-Si TFTs will contribute to the fabrication of high-speed, low-power CMOS poly-Si TFT circuits on glass substrates.
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