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Development of self-cooling device using high conductivity and high thermopower thermoelectric materials

Research Project

Project/Area Number 22560691
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Structural/Functional materials
Research InstitutionYokohama National University

Principal Investigator

NAKATSUGAWA Hiroshi  横浜国立大学, 工学研究院, 准教授 (40303086)

Co-Investigator(Kenkyū-buntansha) OKAMOTO Yoichi  防衛大学校, 電気情報学群, 准教授 (10546063)
Co-Investigator(Renkei-kenkyūsha) YAMAGUCHI Satarou  中部大学, 超電導・持続可能エネルギー研究センター, 教授 (10249964)
KAWAHARA Toshio  中部大学, 超電導・持続可能エネルギー研究センター, 教授 (80437350)
Project Period (FY) 2010 – 2012
Project Status Completed (Fiscal Year 2012)
Budget Amount *help
¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Fiscal Year 2012: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2011: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2010: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Keywords熱 / エネルギー材料 / 電子デバイス・機器 / 廃熱利用 / 熱電変換 / ペルチェ冷却 / 自己冷却 / 熱伝導率 / ゼーベック係数 / 電気伝導率 / 熱電発電
Research Abstract

The self-cooling device has been developed by combining the commercial n-channel power MOSFET and single-crystalline Sb doped n-type and/or B doped p-type silicon wafers in order to improve heat removal or cooling. We find for the first time that the average temperature of the upper side on the power MOSFET with the n-type silicon wafer is cooled down about 2℃, in which the electric current of 40A flows from lower to upper direction of the self-cooling device. This certainly warrants future work on the improvement of the measurement condition.

Report

(4 results)
  • 2012 Annual Research Report   Final Research Report ( PDF )
  • 2011 Annual Research Report
  • 2010 Annual Research Report
  • Research Products

    (21 results)

All 2013 2012 2011 2010 Other

All Journal Article (4 results) (of which Peer Reviewed: 4 results) Presentation (9 results) (of which Invited: 1 results) Remarks (8 results)

  • [Journal Article] Self-cooling on power MOSFET using n-type Si wafer2012

    • Author(s)
      H. Nakatsugawa, T. Sato, Y. Okamoto, T.Kawahara, and S.Yamaguchi
    • Journal Title

      9th European Conference on Thermoelectrics AIP Conference Proceedings

      Volume: Vol.1449 Pages: 548-551

    • Related Report
      2012 Final Research Report
    • Peer Reviewed
  • [Journal Article] Self-cooling on power MOSFET using n-type Si wafer2012

    • Author(s)
      Hiroshi Nakatsugawa
    • Journal Title

      9th European Conference on Thermoelectrics AIP Conference Proceedings

      Volume: 1449 Pages: 548-551

    • DOI

      10.1063/1.4731615

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Thermoelectric Properties of Single-Crystalline SiC and Dense Sintered SiC for Self-Cooling Devices2011

    • Author(s)
      S. Fukuda, T. Kato, Y. Okamoto, H.Nakatsugawa, H. Kitagawa, and S. Yamaguchi
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: Vol.50, No.3

    • NAID

      40018777871

    • Related Report
      2012 Final Research Report
    • Peer Reviewed
  • [Journal Article] Thermoelectric Properties of Single-Crystalline SiC and Dense Sintered SiC for Self-Cooling Devices2011

    • Author(s)
      中津川博、岡本庸一
    • Journal Title

      Jpn.J.Appl.Phys.

      Volume: Vol.50 Issue: 3R Pages: 31301-31301

    • DOI

      10.1143/jjap.50.031301

    • NAID

      40018777871

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Presentation] Electric current dependence on self-cooling device consists of silicon wafers connected to power MOSFET2013

    • Author(s)
      Hiroshi Nakatsugawa
    • Organizer
      The 32nd International Conference on Thermoelectrics
    • Place of Presentation
      Kobe, Japan
    • Related Report
      2012 Annual Research Report
  • [Presentation] Self-cooling on power MOSFET using copper plating single-crystalline silicon wafers2012

    • Author(s)
      H. Nakatsugawa, Y. Okamoto, S. Yamaguchi, T. Kawahara
    • Organizer
      International Union of Materials Research Societies-International Conference on Electronic Materials 2012 (Invited)
    • Place of Presentation
      Yokohama Japan
    • Related Report
      2012 Final Research Report
  • [Presentation] Observation of self-cooling on power MOSFET with silicon wafers using infrared thermography2012

    • Author(s)
      H. Nakatsugawa, Y. Okamoto, S. Yamaguchi, T. Kawahara
    • Organizer
      The 31^<st> International and 10^<th> European Conference on Thermoelectrics
    • Place of Presentation
      Aalborg Denmark
    • Related Report
      2012 Final Research Report
  • [Presentation] Observation of self-cooling on power MOSFET with silicon wafers using infrared thermography2012

    • Author(s)
      Hiroshi Nakatsugawa
    • Organizer
      The 31st International and 10th European Conference on Thermoelectrics
    • Place of Presentation
      Aalborg, Denmark
    • Related Report
      2012 Annual Research Report
  • [Presentation] Self-cooling on power MOSFET using copper plating single-crystalline silicon wafers2012

    • Author(s)
      Hiroshi Nakatsugawa
    • Organizer
      International Union of Materials Research Societies - International Conference on Electronic Materials 2012
    • Place of Presentation
      Yokohama, Japan
    • Related Report
      2012 Annual Research Report
    • Invited
  • [Presentation] Self-cooling on power MOSFET using n-type Si wafer2011

    • Author(s)
      中津川博、岡本庸一
    • Organizer
      9th European Conference on Thermoelectrics (ECT2011)
    • Place of Presentation
      Thessaloniki, GREECE
    • Year and Date
      2011-09-30
    • Related Report
      2011 Annual Research Report
  • [Presentation] Self-cooling on power MOSFET using n-type Si wafer2011

    • Author(s)
      H. Nakatsugawa, T. Sato, Y. Okamoto, T.Kawahara, S. Yamaguchi
    • Organizer
      9^<th> European Conference on Thermoelecrics
    • Place of Presentation
      Thessaloniki Greece
    • Related Report
      2012 Final Research Report
  • [Presentation] Application of High-Thermoelectric-Power Materials to Self-Cooling Device2010

    • Author(s)
      中津川博、岡本庸一
    • Organizer
      The 3rd International Congress on Ceramics
    • Place of Presentation
      大阪府
    • Year and Date
      2010-11-18
    • Related Report
      2010 Annual Research Report
  • [Presentation] Application of High-Thermoelectric-Power Materials to Self-Cooling Device2010

    • Author(s)
      H. Nakatsugawa, Y. Okamoto, S. Yamaguchi, T. Kawahara
    • Organizer
      The 3^<rd> International Congress on Ceramics
    • Place of Presentation
      Osaka Japan
    • Related Report
      2012 Final Research Report
  • [Remarks]

    • URL

      http://nakatsugawa-lab.jp/

    • Related Report
      2012 Final Research Report
  • [Remarks]

    • URL

      http://er-web.jmk.ynu.ac.jp/html/NAKATSUGAWA_Hiroshi/ja.html?k=%E4%B8%AD%E6%B4%A5%E5%B7%9D

    • Related Report
      2012 Final Research Report
  • [Remarks] 研究者詳細

    • URL

      http://er-web.jmk.ynu.ac.jp/html/NAKATSUGAWA_Hiroshi/ja.html?k=%E4%B8%AD%E6%B4%A5%E5%B7%9D

    • Related Report
      2012 Annual Research Report
  • [Remarks] 中津川研究室

    • URL

      http://nakatsugawa-lab.jp/index.html

    • Related Report
      2012 Annual Research Report
  • [Remarks]

    • URL

      http://nakatsugawa-lab.jp/international%20conference.html

    • Related Report
      2011 Annual Research Report
  • [Remarks]

    • URL

      http://nakatsugawa-lab.jp/paper.html

    • Related Report
      2011 Annual Research Report
  • [Remarks]

    • URL

      http://nakatsugawa-lab.jp/international%20conference.html

    • Related Report
      2010 Annual Research Report
  • [Remarks]

    • URL

      http://nakatsugawa-lab.jp/paper.html

    • Related Report
      2010 Annual Research Report

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Published: 2010-08-23   Modified: 2019-07-29  

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