| Project/Area Number |
22560691
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Structural/Functional materials
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| Research Institution | Yokohama National University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
OKAMOTO Yoichi 防衛大学校, 電気情報学群, 准教授 (10546063)
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| Co-Investigator(Renkei-kenkyūsha) |
YAMAGUCHI Satarou 中部大学, 超電導・持続可能エネルギー研究センター, 教授 (10249964)
KAWAHARA Toshio 中部大学, 超電導・持続可能エネルギー研究センター, 教授 (80437350)
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| Project Period (FY) |
2010 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Fiscal Year 2012: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2011: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2010: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
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| Keywords | 熱 / エネルギー材料 / 電子デバイス・機器 / 廃熱利用 / 熱電変換 / ペルチェ冷却 / 自己冷却 / 熱伝導率 / ゼーベック係数 / 電気伝導率 / 熱電発電 |
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| Research Abstract |
The self-cooling device has been developed by combining the commercial n-channel power MOSFET and single-crystalline Sb doped n-type and/or B doped p-type silicon wafers in order to improve heat removal or cooling. We find for the first time that the average temperature of the upper side on the power MOSFET with the n-type silicon wafer is cooled down about 2℃, in which the electric current of 40A flows from lower to upper direction of the self-cooling device. This certainly warrants future work on the improvement of the measurement condition.
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