A wavelength conversion device by a semiconductor-multilayer-coupled cavity
Project/Area Number |
22656018
|
Research Category |
Grant-in-Aid for Challenging Exploratory Research
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Allocation Type | Single-year Grants |
Research Field |
Applied optics/Quantum optical engineering
|
Research Institution | The University of Tokushima |
Principal Investigator |
ISU Toshiro 徳島大学, 大学院・ソシオテクノサイエンス研究部, 特任教授 (00379546)
|
Co-Investigator(Kenkyū-buntansha) |
KITADA Takahiro 徳島大学, 大学院・ソシオテクノサイエンス研究部, 特任准教授 (90283738)
MORITA Ken 徳島大学, 大学院・ソシオテクノサイエンス研究部, 特任講師 (30448344)
|
Project Period (FY) |
2010 – 2011
|
Project Status |
Completed (Fiscal Year 2011)
|
Budget Amount *help |
¥3,460,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥360,000)
Fiscal Year 2011: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2010: ¥1,900,000 (Direct Cost: ¥1,900,000)
|
Keywords | 光エレクトロニクス / 波長変換 / 微小共振器 / MBE,エピタキシャル / 光スイッチ / 非線形光学応答 / 化合物半導体多層膜 / 超高速全光スイッチ |
Research Abstract |
Optical properties of the three-coupled-cavity structures for planar type wavelength conversion devices operating at a low power with ultrafast response were investigated. We fabricated GaAs/ AlAs multilayer three-coupled-cavity structures by molecular beam epitaxy, and observed three cavity modes as designed. We also observed large nonlinear signals in the spatially separated degenerate-four-wave-mixing measurements.
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Report
(3 results)
Research Products
(11 results)