Mechanism of oxygen transportation in Czochralski Ge crystal growth from the melt covered by B_2O_3

• Project/Area Number: 22686002
• Research Category: Grant-in-Aid for Young Scientists (A)
• Allocation Type: Single-year Grants
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Shinshu University
• Principal Investigator: TAISHI Toshinori 信州大学, 工学部, 准教授 (90397307)
• Co-Investigator(Renkei-kenkyūsha): YONENAGA Ichiro 東北大学, 金属材料研究所, 教授 (20134041) ; HOSHIKAWA Keigo 信州大学, 工学部, 客員教授 (10231573)
• Project Period (FY): 2010 – 2012
• Project Status: Completed (Fiscal Year 2012)
• Budget Amount: ¥26,390,000 (Direct Cost: ¥20,300,000、Indirect Cost: ¥6,090,000); Fiscal Year 2012: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000); Fiscal Year 2011: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000); Fiscal Year 2010: ¥20,800,000 (Direct Cost: ¥16,000,000、Indirect Cost: ¥4,800,000)
• Keywords: 結晶成長 / 結晶評価 / ゲルマニウム / 酸素 / 輸送機構 / 低転位密度 / 引き上げ法 / 高強度 / 酸化ホウ素

Research Abstract

Mechanism of oxygen transportation in Czochralski germanium (Ge) crystal growth from the melt covered by B_2O_3 was investigated. Ge crystals with high oxygen concentration up to were successfully grown from the melt fully covered by B_2O_3. In such growth, GeO_2 particles is decomposed by B_2O_3, however, few B and Si atoms were contaminated in the Ge melt and the grown crystal. Dissolution, evaporation and segregation of oxygen in the present growth were also discussed, finally, transportation of oxygen during the growth was clarified.

Research Products

• [Journal Article] Interstitial oxygen behavior for thermal double donor formation in germanium: Infrared absorption studies (2013)
  • Author(s): K. Inoue, T. Taishi, Y. Tokumoto, Y. Murao, K.Kutsukake, Y. Ohno, M. Suezawa, I.Yonenaga
  • Journal Title: J. Appl. Phys. Volume: 113 Issue: 7
  • DOI: 10.1063/1.4792061
  • Peer Reviewed
• [Journal Article] Characteristics of germanium crystals doped with boron-related compounds (2012)
  • Author(s): T. Taishi, Y. Murao, I. Yonenaga, K. Hoshikawa
  • Journal Title: The 6th International Symposium on Advanced Science and Technology of Sillicon Materials Pages: 71-74
• [Journal Article] Oxygen in Ge crystals grown by the B_2O_3 encapsulated Czochralski method (2012)
  • Author(s): I. Yonenaga, T. Taishi, H. Ise, Y. Murao, K. Inoue, T. Ohsawa, Y. Tokumoto, Y. Ohno, Y. Hashimoto
  • Journal Title: Physica B Volume: 407 Issue: 15 Pages: 2932-2934
  • DOI: 10.1016/j.physb.2011.08.038
  • Peer Reviewed
• [Journal Article] Czochralski growth techniques of germanium crystals grown from a melt covered partially or fully by liquid B_2O_3 (2012)
  • Author(s): T. Taishi, Y. Hashimoto, H. Ise, Y. Murao, T.Ohsawa, I. Yonenaga
  • Journal Title: J. Cryst. Growth Volume: 360 Pages: 47-51
  • DOI: 10.1016/j.jcrysgro.2011.11.051
  • Peer Reviewed
• [Journal Article] 液状酸化ホウ素(B_2O_3)を用いた無転位・酸素添加ゲルマニウム結晶の育成 (2011)
  • Author(s): 太子敏則, 米永一郎
  • Journal Title: まてりあ Volume: 50 Pages: 431-438
  • NAID: 10029693244
  • Peer Reviewed
• [Journal Article] Impurity effects on the generation and velocity of dislocations in Ge (2011)
  • Author(s): Y. Murao, T. Taishi, Y. Tokumoto, Y. Ohno , I. Yonenaga
  • Journal Title: J. Appl. Phys Volume: 109 Issue: 11
  • DOI: 10.1063/1.3592226
  • Peer Reviewed
• [Journal Article] Behavior of oxygen-related thermal donors in Ge crystals Czochralski-grown from the melt covered fully by B_2O_3 (2011)
  • Author(s): T. Taishi, Y. Hashimoto, H. Ise, Y. Murao, T. Ohsawa, Y. Tokumoto, Y. Ohno, I. Yonenaga
  • Journal Title: J. Phys. Conf. Ser Volume: 281 Pages: 012011-012011
  • DOI: 10.1088/1742-6596/281/1/012011
  • Peer Reviewed
• [Journal Article] Oxygen doped Ge crystals Czochralski-grown from the B_2O_3-fully -covered melt (2011)
  • Author(s): T. Taishi, H. Ise, Y. Murao, T. Ohsawa, Y. Tokumoto, Y. Ohno, I. Yonenaga
  • Journal Title: Miroelectro. Eng Volume: 88 Issue: 4 Pages: 496-498
  • DOI: 10.1016/j.mee.2010.10.015
  • Peer Reviewed
• [Journal Article] Oxygen doped Ge crystals Czochralski-grown from the B_2O_3-fully-covered melt (2011)
  • Author(s): T.Taishi, H.Ise, Y Murao, T.Ohsawa, Y Tokumoto, Y.Ohno, I.Yonenaga
  • Journal Title: Miroelectro.Eng. Volume: 88 Pages: 496-498
  • Peer Reviewed
• [Journal Article] Evaluations of oxygen impurities in Ge crystals Czochralski-grown from melts partially or fully covered by B_2O_3 liquid, Proc (2010)
  • Author(s): T. Taishi, Y. Hashimoto, H. Ise, Y. Murao, T. Ohsawa, Y. Tokumoto, Y. Ohno, I. Yonenaga
  • Journal Title: The Forum on the Science and Technology of Silicon Materials Pages: 28-33
• [Journal Article] Czochralski growth of Ge crystal from the melt partially covered by B_2O_3 liquid for reduction of dislocation density (2010)
  • Author(s): T. Taishi, Y. Hashimoto, H. Ise, Y. Murao, T. Ohsawa, Y. Tokumoto, Y. Ohno, I. Yonenaga
  • Journal Title: Proc. The Forum on the Science and Technology of Silicon Materials Pages: 426-432
• [Journal Article] Czochralski -growth of germanium crystals containing high concen-trations of oxygen impurities (2010)
  • Author(s): T. Taishi, H. Ise, Y. Murao, T. Ohsawa, M. Suezawa, Y. Tokumoto, Y. Ohno, K. Hoshikawa, I. Yonenaga
  • Journal Title: J. Cryst. Growth Volume: 312 Issue: 19 Pages: 2783-2787
  • DOI: 10.1016/j.jcrysgro.2010.05.045
  • Peer Reviewed
• [Journal Article] Czochralski-growth of germanium crystals containing high concen-trations of oxygen impurities (2010)
  • Author(s): T.Taishi, H.Ise, Y.Murao, T.Ohsawa, M.Suezawa, Y.Tokumoto, Y.Ohno, K.Hoshikawa, I.Yonenaga
  • Journal Title: J.Cryst.Growth Volume: 312 Pages: 2783-2787
  • Peer Reviewed
• [Journal Article] Evaluations of oxygen impurities in Ge crystals Czochralski-grown from melts partially or fully covered by B_2O_3 liquid (2010)
  • Author(s): T.Taishi, Y.Hashimoto, H.Ise, Y Murao, T.Ohsawa, Y.Tokumoto, Y.Ohno, I.Yonenaga
  • Journal Title: Proc.The Forum on the Science and Technology of Silicon Materials 2010 Pages: 28-33
• [Journal Article] Czochralski growth of Ge crystal from the melt partially covered by B_2O_3 liquid for reduction of dislocation density (2010)
  • Author(s): T.Taishi, Y.Hashimoto, H.Ise, Y.Murao, T.Ohsawa, Y.Tokumoto, Y.Ohno, I.Yonenaga
  • Journal Title: Proc.The Forum on the Science and Technology of Silicon Materials 2010 Pages: 426-432
• [Presentation] B_2O_3で覆われた融液からのCZ-Ge結晶育成における酸素の偏析 (2013)
  • Author(s): 太子敏則, 米永一郎, 干川圭吾
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 厚木
  • Year and Date: 2013-03-30
• [Presentation] B2O3で覆われた融液からのCZ-Ge結晶育成における酸素の偏析 (2013)
  • Author(s): 太子敏則，米永一郎，干川圭吾
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 厚木
• [Presentation] Growth and characterization of germanium crystals from B_2O_3-coverd melt (2012)
  • Author(s): T. Taishi
  • Organizer: 2012 3CG Collaborative Conference on Crystal Growth
  • Place of Presentation: Orlando, USA.(invited)
  • Year and Date: 2012-12-10
• [Presentation] Characteristics of germanium crystals doped with boron-related compounds (2012)
  • Author(s): T. Taishi, Y. Murao, I. Yonenaga, K. Hoshikawa
  • Organizer: The 6th International Symposium on Advanced Science and Technology of Silicon Materials
  • Place of Presentation: Cona, Hawaii
  • Year and Date: 2012-11-21
• [Presentation] 液状B_2O_3で覆った融液から育成したCZ-Ge結晶中の欠陥評価 (2012)
  • Author(s): 太子敏則
  • Organizer: 第22回格子欠陥フォーラム・励起ナノプロセス研究会・理研シンポジウム合同シンポジウム「材料科学のための欠陥制御・評価」
  • Place of Presentation: 三浦
  • Year and Date: 2012-09-22
• [Presentation] B_2O_3で覆われた融液からのCZ- Ge結晶育成におけるB、 Si、 Oの反応 (2012)
  • Author(s): 太子敏則,米永一郎,干川圭吾
  • Organizer: 第73回応用物理学会学術講演会
  • Place of Presentation: 松山
  • Year and Date: 2012-09-14
• [Presentation] B2O3で覆われた融液からのCZ-Ge結晶育成におけるB、Si、Oの反応 (2012)
  • Author(s): 太子敏則，米永一郎，干川圭吾
  • Organizer: 第73回応用物理学会学術講演会
  • Place of Presentation: 松山
• [Presentation] 液状B2O3で覆った融液から育成したCZ-Ge結晶中の欠陥評価 (2012)
  • Author(s): 太子敏則
  • Organizer: 第22回格子欠陥フォーラム・励起ナノプロセス研究会・理研シンポジウム合同シンポジウム「材料科学のための欠陥制御・評価」
  • Place of Presentation: 三浦
• [Presentation] Characteristics of germanium crystals doped with boron-related compounds (2012)
  • Author(s): T. Taishi, Y. Murao, I. Yonenaga, K. Hoshikawa
  • Organizer: The 6th International Symposium on Advanced Science and Technology of Silicon Materials
  • Place of Presentation: コナ・ハワイ
• [Presentation] Growth and characterization of germanium crystals from B2O3-coverd melt (2012)
  • Author(s): T. Taishi
  • Organizer: 2012 3CG Collaborative Conference on Crystal Growth
  • Place of Presentation: オーランド・米国
  • Invited
• [Presentation] B_2O_3 で覆われた融液から成長したCZ-Ge 結晶中の酸素ドナーの挙動 (2011)
  • Author(s): 太子敏則, 橋本佳男, 伊勢秀彰, 大澤隆亨,米永一郎
  • Organizer: 第58回応用物理学関係連合講演会
  • Place of Presentation: 厚木
  • Year and Date: 2011-03-26
• [Presentation] B_2O_3で覆われた融液から成長したCZ-Ge結晶中の酸素ドナーの挙動 (2011)
  • Author(s): 太子敏則, 橋本佳男, 伊勢秀彰, 大澤隆亨, 米永一郎
  • Organizer: 第58回応用物理学関係連合講演会
  • Place of Presentation: 厚木
  • Year and Date: 2011-03-26
• [Presentation] CZ-Ge結晶成長における酸素添加と酸素ドナー挙動 (2011)
  • Author(s): 太子敏則, 橋本佳男, 伊勢秀彰, 大澤隆亨, 村尾優, 米永一郎
  • Organizer: 第41回結晶成長国内会議
  • Place of Presentation: つくば
• [Presentation] Growth of dislocation-free Ga-doped Ge crystals using boron oxide for solar cells (2011)
  • Author(s): T. Taishi, Y. Hashimoto, Y. Murao, T. Ohsawa, I. Yonenaga
  • Organizer: The 7th International Conference on Silicon Epitaxy and Heterostructure
  • Place of Presentation: Leuven, Belgium
• [Presentation] New Czochralski growth techniques of germaniumcrystals from the melt covered by B_2O_3 liquid (2011)
  • Author(s): T. Taishi, Y. Hashimoto, H. Ise, Y. Murao, T. Ohsawa, I. Yonenaga
  • Organizer: The 5th International Workshop on Crystal Growth and Technology
  • Place of Presentation: Berlin, Germany
• [Presentation] New Czochralski growth techniques of germanium crystals from the melt covered by B_2O_3 liquid (2011)
  • Author(s): T.Taishi, Y.Hashimoto, H.Ise, Y.Murao, T.Ohsawa, I.Yonenaga
  • Organizer: The 5th International Workshop on Crystal Growth and Technology
  • Place of Presentation: ベルリン(ドイツ)
• [Presentation] Growth of dislocation-free Ga-doped Ge crystals using boron oxide for solar cells (2011)
  • Author(s): T.Taishi, Y.Hashimoto, Y.Murao, T.Ohsawa, I.Yonenaga
  • Organizer: The 7th International Conference on Silicon Epitaxy and Heterostructure
  • Place of Presentation: ルーヴェン(ベルギー)
• [Presentation] Evaluation of oxygen-related defects in Ge crystals grown from the melt covered by B_2O_3 (2010)
  • Author(s): T. Taishi, Y. Hashimoto, H. Ise, Y. Murao, T. Ohsawa, Y. Tokumoto, Y. Ohno, I. Yonenaga
  • Organizer: The Forum on the Science and Technology of Silicon Materials 2010
  • Place of Presentation: Okayama
  • Year and Date: 2010-11-15
• [Presentation] Czochralski germanium crystal growth with low dislocation density and oxygen impurities (2010)
  • Author(s): T. Taishi
  • Organizer: The Forum on the Science and Technology of Silicon Materials 2010
  • Place of Presentation: Okayama. (invited)
  • Year and Date: 2010-11-15
• [Presentation] Czochralski germanium crystal growth with low dislocation density and oxygen impurities (2010)
  • Author(s): T.Taishi
  • Organizer: The Forum on the Science and Technology of Silicon Materials 2010
  • Place of Presentation: 岡山
  • Year and Date: 2010-11-15
• [Presentation] Evaluation of oxygen-related defects in Ge crystals grown from the melt covered by B_2O_3 (2010)
  • Author(s): T.Taishi, Y.Hashimoto, H.Ise, Y.Murao, T.Ohsawa, Y.Tokumoto, Y.Ohno, I.Yonenaga
  • Organizer: The Forum on the Science and Technology of Silicon Materials 2010
  • Place of Presentation: 岡山
  • Year and Date: 2010-11-15
• [Presentation] B_2O_3で覆われた融液から成長したCZ-Ge結晶中の酸素の特徴 (2010)
  • Author(s): 太子敏則, 橋本佳男, 伊勢秀彰, 大澤隆亨, 米永一郎
  • Organizer: 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎
  • Year and Date: 2010-09-14
• [Presentation] B_2O_3 で覆われた融液から成長したCZ-Ge 結晶中の酸素の特徴 (2010)
  • Author(s): 太子敏則, 橋本佳男, 伊勢秀彰, 大澤隆亨, 米永一郎
  • Organizer: 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎
  • Year and Date: 2010-09-01
• [Presentation] Dislocation density and oxygen concentration in Czochralski germanium crystals grown using boron oxide (2010)
  • Author(s): T. Taishi, Y. Hashimoto, H. Ise, Y. Murao, T. Ohsawa, Y. Tokumoto, Y. Ohno, I. Yonenaga
  • Organizer: The 16th International Conference on Crystal Growth
  • Place of Presentation: Beijing, China
  • Year and Date: 2010-08-09
• [Presentation] Dislocation density and oxygen concentration in Czochralski germanium crystals grown using boron oxide (2010)
  • Author(s): T.Taishi, Y.Hashimoto, H.Ise, Y.Murao, T.Ohsawa, Y.Tokumoto, Y.Ohno, I.Yonenaga
  • Organizer: The 16th International Conference on Crystal Growth
  • Place of Presentation: 北京
  • Year and Date: 2010-08-09
• [Book] Germanium: Properties, Production and Applications (2012)
  • Author(s): T. Taishi, I. Yonenaga
  • Total Pages: 17
  • Publisher: Growth of Ge crystals with extremely low dislocation density
• [Book] Germanium : Properties, Production and Applications (2012)
  • Author(s): T.Taishi, I.Yonenaga
  • Publisher: Nova Science Publishers, Inc.(in press)
• [Remarks] 信州大学工学部干川・太子研究室ホームページの一部で紹介
  • URL: http://www.shinshu-u.ac.jp/faculty/engineering/chair/hoshikawa-taishi/