| Budget Amount *help |
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2011: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2010: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
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| Research Abstract |
We have achieved a highly quantum efficiency(QE) and a robustness using a wide-band-gap semiconductor. A QE of InGaN-GaN superlattice is about 1. 5% in a wavelength of 300 nm, which is tenfold higher than an ordinal photocathode such as GaAs-GaAsP superlattice. Moreover, we have also realized a high durability against residual molecules in a vacuum using the wide-band-gap semiconductor photocathode.
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