| Project/Area Number |
22760055
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied physics, general
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| Research Institution | Japan Atomic Energy Agency |
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Principal Investigator |
MAKINO Takahiro 独立行政法人日本原子力研究開発機構, 量子ビーム応用研究部門, 研究職 (80549668)
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| Project Period (FY) |
2010 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2011: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
Fiscal Year 2010: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
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| Keywords | SETパルス / 論理LSI / 耐放射線性 / イオン照射 / SOI / ソフトエラー |
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| Research Abstract |
Digital Single Event Transient(DSET) pulses are momentary voltage disturbance generated at logic gates by ion incident. Since pulse-width of DSETs is a key parameter of soft error rate in the logic VLSIs, the DSET pulse-widths from a logic cell have been extensively measured by using specially built circuits. In this research, we first estimated Digital Single Event Transient(DSET) pulse-widths originated in an inverter cell from high-energy heavy-ion-induced transient current in a single n-type MOSFET by using a table-based estimation method. We showed that the estimation method is applicable to the DSET pulse-widths estimation in the case of high-energy heavy-ion irradiation. In addition, we measured heavy ion induced current pulse cross-section on the p-type MOSFET used in the logic cell, to investigate an impact of the cross-section for the SET cross-section on the logic cell. From the results, we assume that current pulses from pMOSFET induce 25% of SET pulses.
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