| Project/Area Number |
22760226
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Tokyo Institute of Technology |
|---|
Principal Investigator |
SHUTO Yusuke 東京工業大学, 像情報工学研究所, 特任助教 (80523670)
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| Project Period (FY) |
2010 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
|
| Budget Amount *help |
¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2011: ¥390,000 (Direct Cost: ¥300,000、Indirect Cost: ¥90,000)
Fiscal Year 2010: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
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| Keywords | 作成・評価技術 / スピントロニクス材料 / スピントロニクス / エピタキシャル / 先端機能デバイス / 磁性 / MBE,エピタキシャル |
|---|
| Research Abstract |
"Silicon spintronics "is promising for improving functionalities of silicon CMOS technology without scaling. To develop this technology, methods of spin-injection/detection/manipulation for a Si channel must be established. Therefore, in this study, formation technologies of high-quality half-metal full-Heusler alloys, which can become high-efficient spin-injector/detector, on Si were developed. Furthermore, device structures which were suitable for observing behavior of spins were designed.
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