Device Structure Optimization of MOS Transistors for Reduction of Low Frequency Noise

• Project/Area Number: 22860004
• Research Category: Grant-in-Aid for Research Activity Start-up
• Allocation Type: Single-year Grants
• Research Field: Electron device/Electronic equipment
• Research Institution: Tohoku University
• Principal Investigator: KURODA Rihito 東北大学, 大学院・工学研究科, 助教 (40581294)
• Project Period (FY): 2010 – 2011
• Project Status: Completed (Fiscal Year 2011)
• Budget Amount: ¥3,146,000 (Direct Cost: ¥2,420,000、Indirect Cost: ¥726,000); Fiscal Year 2011: ¥1,508,000 (Direct Cost: ¥1,160,000、Indirect Cost: ¥348,000); Fiscal Year 2010: ¥1,638,000 (Direct Cost: ¥1,260,000、Indirect Cost: ¥378,000)
• Keywords: MOSトランジスタ / 1/fノイズ / Random Telegraph Noise / CMOSイメージセンサ / シリコン / ノイズ / Random Telegraph Signalノイズ / MOSFET

Research Abstract

The noise characteristics of MOS transistors with various device parameters were evaluated using the measurement method that can statistically analyze noise of more than one million transistors. It was confirmed that the appearance probability of random telegraph noise in buried channel structure with buried layer width of 60nm is reduced to 1/60 compared to the standard surface channel structure. The noise reduction mechanism by an introduction of the buried channel structure was clarified. The device structure optimization methodology for low noise MOS transistor was proposed for the realization of very high sensitivity CMOS image sensors.

Research Products

• [Journal Article] A Test Circuit for Statistical Evaluation of p-n Junction Leakage Current and Its Noise (2012)
  • Author(s): K. Abe, T. Fujisawa, H. Suzuki, S. Watabe, R. Kuroda, S. Sugawa, A. Teramoto and T. Ohmi
  • Journal Title: IEEE Trans. Semicond. Manuf. Volume: (印刷中)
  • Peer Reviewed
• [Journal Article] Recovery Characteristics of Anomalous Stress-Induced Leakage Current of 5. 6 nm Oxide Films (2012)
  • Author(s): T. Inatsuka, Y. Kumagai, R. Kuroda, A. Teramoto, S. Sugawa and T. Ohmi
  • Journal Title: Jpn. J. Appl. Phys. Volume: 51
  • Peer Reviewed
• [Journal Article] On the Interface Flattening Effect and Gate Insulator Breakdown Characteristic of Radical Reaction Based Insulator Formation Technology (2012)
  • Author(s): R. Kuroda, A. Teramoto, X. Li, T. Suwa, S. Sugawa, and T. Ohmi
  • Journal Title: Jpn. J. Appl. Phys. Volume: 51
  • NAID: 210000140192
  • Peer Reviewed
• [Journal Article] On the Interface Flattening Effect and Gate Insulator Breakdown Characteristic of Radical Reaction Based Insulator Formation Technology (2012)
  • Author(s): Rihito Kuroda
  • Journal Title: Japanese Journal of Applied Physics Volume: 51 Issue: 2S Pages: 02BA01-02BA01
  • DOI: 10.1143/jjap.51.02ba01
  • NAID: 210000140192
  • Peer Reviewed
• [Journal Article] Recovery Characteristics of Anomalous Stress Induced Leakage Current of 5.6nm Oxide Films (2012)
  • Author(s): Takuya Inatsuka
  • Journal Title: Japanese Journal of Applied Physics Volume: 51(印刷中)
  • Peer Reviewed
• [Journal Article] A Test Circuit for Statistical Evaluation of p-n Junction Leakage Current and Its Noise (2012)
  • Author(s): Kenichi Abe
  • Journal Title: IEEE Transactions on Semiconductor Manufacturing Volume: 25(印刷中)
  • Peer Reviewed
• [Journal Article] Different Properties of Erbium Silicides on Si(100)and Si(551)Orientation Surfaces (2011)
  • Author(s): H. Tanaka, A. Teramoto, R. Kuroda, Y. Nakao, T. Suwa, K. Kawase, S. Sugawa and T. Ohmi
  • Journal Title: ECS Trans. Volume: 41 Pages: 365-373
  • Peer Reviewed
• [Journal Article] Gate SiO2 Film Integrity on Ultra-Pure Argon Anneal (100)Silicon Surface (2011)
  • Author(s): A. Teramoto, X. Li, R. Kuroda, T. Suwa, S. Sugawa and T. Ohmi
  • Journal Title: ECS Trans. Volume: 41 Pages: 147-156
  • Peer Reviewed
• [Journal Article] Large-Scale Test Circuits for High-Speed and Highly Accurate Evaluation of Variability and Noise in Metal. Oxide. Semiconductor Field-Effect Transistor Electrical Characteristics (2011)
  • Author(s): Y. Kumagai, K. Abe, T. Fujisawa, S. Watabe, R. Kuroda, N. Miyamoto, T. Suwa, A. Teramoto, S. Sugawa and T. Ohmi
  • Journal Title: Jpn. J. Appl. Phys. Volume: 50
  • NAID: 210000071398
  • Peer Reviewed
• [Journal Article] Evaluation for Anomalous Stress-Induced Leakage Current of Gate SiO_2 Films Using Array Test Pattern (2011)
  • Author(s): Y. Kumagai, A. Teramoto, T. Inatsuka, R. Kuroda, T. Suwa, S. Sugawa and T. Ohmi
  • Journal Title: IEEE Trans. Electron Dev. Volume: 58 Pages: 3307-3313
  • Peer Reviewed
• [Journal Article] Highly Reliable Radical SiO_2 Films on Atomically Flat Silicon Surface Formed by Low Temperature Pure Ar Annealing (2011)
  • Author(s): X. Li, R. Kuroda, T. Suwa, A. Teramoto, S. Sugawa and T. Ohmi
  • Journal Title: Jpn. J. Appl. Phys. Volume: 50
  • Peer Reviewed
• [Journal Article] Formation speed of atomically flat surface on Si (100)in ultra-pure argon (2011)
  • Author(s): X. Li, A. Teramoto, T. Suwa, R. Kuroda, S. Sugawa, and T. Ohmi
  • Journal Title: Microelec. Eng. Volume: 88 Pages: 3133-3139
  • Peer Reviewed
• [Journal Article] Analysis of the Low-Frequency Noise Reduction in Si(100)Metal. Oxide. Semiconductor Field-Effect Transistors (2011)
  • Author(s): P. Gaubert, A. Teramoto, R. Kuroda, Y. Nakao, H. Tanaka, S. Sugawa, and T. Ohmi
  • Journal Title: J. Appl. Phys. Volume: 50
  • NAID: 210000070258
  • Peer Reviewed
• [Journal Article] Impact of Channel Direction Dependent Low Field Hole Mobility on (100)Orientation Silicon Surface (2011)
  • Author(s): R. Kuroda, A. Teramoto, S. Sugawa, and T. Ohmi
  • Journal Title: Jpn. J. Appl. Phys. Volume: 50
  • NAID: 210000070260
  • Peer Reviewed
• [Journal Article] Analysis of the Low-Frequency Noise Reduction in Si(100) Metal-Oxide-Semiconductor Field-Effect Transistors (2011)
  • Author(s): Phillip Gaubert
  • Journal Title: Japanese Journal of Applied Physics Volume: 50 Issue: 4S Pages: 04DC01-04DC01
  • DOI: 10.1143/jjap.50.04dc01
  • Peer Reviewed
• [Journal Article] Impact of Channel Direction Dependent Low Field Hole Mobility on (100) Orientation Silicon Surface (2011)
  • Author(s): Rihito Kuroda
  • Journal Title: Japanese Journal of Applied Physics Volume: 50 Issue: 4S Pages: 04DC03-04DC03
  • DOI: 10.1143/jjap.50.04dc03
  • NAID: 210000070260
  • Peer Reviewed
• [Journal Article] Visualization of Single Atomic Steps on An Ultra-Flat Si(100) Surface by Advanced Differential Interference Contrast Microscopy (2011)
  • Author(s): Shin-Ichiro Kobayashi
  • Journal Title: Electrochemical and Solid-State Letters Volume: 14 Issue: 9 Pages: H351-H351
  • DOI: 10.1149/1.3597657
  • Peer Reviewed
• [Journal Article] Formation Speed of Atomically Flat surface on Si(100) in Ultra-Pure Argon (2011)
  • Author(s): Xiang Li
  • Journal Title: Microelectronic Engineering Volume: 88 Issue: 10 Pages: 3133-3139
  • DOI: 10.1016/j.mee.2011.06.014
  • Peer Reviewed
• [Journal Article] Highly Reliable Radical SiO_2 Films on Atomically Flat Silicon Surface Formed by Low Temperature Pure Ar Annealing (2011)
  • Author(s): Xiang Li
  • Journal Title: Japanese Journal of Applied Physics Volume: 50 Issue: 10S Pages: 10PB05-10PB05
  • DOI: 10.1143/jjap.50.10pb05
  • Peer Reviewed
• [Journal Article] Evaluation for Anomalous Stress Induced Leakage Current of Gate SiO_2 Films using Array Test Pattern (2011)
  • Author(s): Yuki Kumagai
  • Journal Title: IEEE Transactions on Electron Devices Volume: 58 Issue: 10 Pages: 3307-3313
  • DOI: 10.1109/ted.2011.2161991
  • Peer Reviewed
• [Journal Article] Large Scale Test Circuits for High Speed and Highly Accurate Evaluation of Variability and Noise of MOSFETs' Electrical Characteristics (2011)
  • Author(s): Yuki Kumagai
  • Journal Title: Japanese Journal of Applied Physics Volume: 50 Issue: 10R Pages: 106701-106701
  • DOI: 10.1143/jjap.50.106701
  • Peer Reviewed
• [Journal Article] Gate SiO_2 Film Integrity on Ultra-Pure Argon Anneal (100) Silicon Surface (2011)
  • Author(s): Akinobu Teramoto
  • Journal Title: Electrochemical Society Transactions Volume: 41 Issue: 7 Pages: 147-156
  • DOI: 10.1149/1.3633294
  • Peer Reviewed
• [Journal Article] Different Properties of Erbium Silicides on Si(100) and Si(551) Orientation Surfaces (2011)
  • Author(s): Hiroaki Tanaka
  • Journal Title: Electrochemical Society Transactions Volume: 41 Issue: 7 Pages: 365-373
  • DOI: 10.1149/1.3633317
  • Peer Reviewed
• [Journal Article] Advanced Direct-Polishing Process Development of Non-Porous Ultralow-k Dielectric Fluorocarbon with Plasma Treatment on Cu Interconnect (2011)
  • Author(s): Xun Gu
  • Journal Title: Journal of The Electrochemical Society Volume: 158 Issue: 11 Pages: H1145-H1145
  • DOI: 10.1149/2.046111jes
  • Peer Reviewed
• [Journal Article] Analysis of the Low-Frequency Noise Reduction in Si (100) Metal-Oxide-Semiconductor Field-Effect Transistors (2011)
  • Author(s): Phillip Gaubert
  • Journal Title: Japanese Journal of Applied Physics Volume: 50(印刷中)
  • Peer Reviewed
• [Journal Article] Impact of Work Function Optimized S/D Silicide Contact for High Current Drivability CMOS (2010)
  • Author(s): Y. Yukihisa, R. Kuroda, H. Tanaka, T. Isogai, A. Teramoto, S. Sugawa, and T. Ohmi
  • Journal Title: ECS Trans. Volume: 28 Pages: 315-324
  • Peer Reviewed
• [Journal Article] Atomically Flattening Technology at 850C^。 for Si(100)Surface (2010)
  • Author(s): X. Li, T. Suwa, A. Teramoto, R. Kuroda, S. Sugawa, and T. Ohmi
  • Journal Title: ECS Trans. Volume: 28 Pages: 299-309
  • Peer Reviewed
• [Journal Article] Atomically Flattening Technology at 850 ℃ for Si (100) Surface (2010)
  • Author(s): Xiang Li
  • Journal Title: Electrochemical Society Transactions Volume: 28 Pages: 299-309
  • Peer Reviewed
• [Journal Article] Impact of Work Function Optimized S/D Silicide Contact for High Current Drivability CMOS (2010)
  • Author(s): Yukihisa Nakao
  • Journal Title: Electrochemical Society Transactions Volume: 28 Pages: 315-324
  • Peer Reviewed
• [Presentation] Statistical Analysis of Random Telegraph Noise Reduction Effect by Separating Channel From the Interface (2012)
  • Author(s): A. Yonezawa, A. Teramoto, R. Kuroda, H. Suzuki, S. Sugawa and T. Ohmi
  • Organizer: IEEE Intl. Reliability Rhys. Symp.
  • Place of Presentation: Anaheim, U. S. A.
  • Year and Date: 2012-04-18
• [Presentation] バースト1Tpixel/sと連続780Mpixel/sの撮像速度を有するグローバルシャッタ高速CMOSイメージセンサ (2012)
  • Author(s): 栃木靖久
  • Organizer: 社団法人映像情報メディア学会情報センシング研究会・コンシューマエレクトロニクス研究会
  • Place of Presentation: 東京
  • Year and Date: 2012-03-30
• [Presentation] A Test Circuit for Extremely Low Gate Leakage Current Measurement of 10 aA for 80, 000 MOSFETs in 80s (2012)
  • Author(s): Y. Kumagai, T. Inatsuka, R. Kuroda, A. Teramoto, T. Suwa, S. Sugawa and T. Ohmi
  • Organizer: IEEE Intl. Conf. on Microelectronic Test Structures
  • Place of Presentation: San Diego, U. S. A.
  • Year and Date: 2012-03-21
• [Presentation] A Global-Shutter CMOS Image Sensor with Readout Speed of 1Tpixel/s Burst and 780Mpixel/s Continuous (2012)
  • Author(s): Yasuhisa Tochigi
  • Organizer: 2012 IEEE International Solid-State Circuit Conference
  • Place of Presentation: San Francisco, U.S.A.
  • Year and Date: 2012-02-22
• [Presentation] Photodiode dopant structure with atomically flat Si surface for high sensitivity and stability to UV light (2012)
  • Author(s): Taiki Nakazawa
  • Organizer: 2012 IS&T/SPIE Electronic Imaging
  • Place of Presentation: Burlingame, U.S.A.
  • Year and Date: 2012-01-26
• [Presentation] 原子レベル平坦化Si表面を用いた紫外光高感度・高信頼性フォトダイオード (2011)
  • Author(s): 黒田理人
  • Organizer: 社団法人映像情報メディア学会情報センシング研究会
  • Place of Presentation: 東京(招待講演)
  • Year and Date: 2011-11-18
• [Presentation] Development of Direct-polish Process of CMP and Post-CMP Clean for Next Generation Advanced Cu Interconnects (2011)
  • Author(s): Rihito Kuroda
  • Organizer: 2011 International Conference on Planarization&CMP
  • Place of Presentation: Seoul, Korea
  • Year and Date: 2011-11-09
• [Presentation] ラジカル反応ベース絶縁膜形成プロセスにおける界面平坦化効果と絶縁膜破壊特性との関係 (2011)
  • Author(s): 黒田理人, 寺本章伸, 李翔, 諏訪智之, 須川成利, 大見忠弘
  • Organizer: 電子情報通信学会, シリコン材料・デバイス研究会
  • Place of Presentation: 仙台
  • Year and Date: 2011-10-20
• [Presentation] 異常Stress Induced Leakage Currentの発生・回復特性の統計的評価 (2011)
  • Author(s): 稲塚卓也, 熊谷勇喜, 黒田理人, 寺本章伸, 須川成利, 大見忠弘
  • Organizer: 電子情報通信学会, シリコン材料・デバイス研究会
  • Place of Presentation: 仙台
  • Year and Date: 2011-10-20
• [Presentation] 埋め込み構造によるMOSFETにおけるランダム・テレグラフ・ノイズの低減 (2011)
  • Author(s): 鈴木裕彌, 黒田理人, 寺本章伸, 米澤秋彰浩, 松岡弘章, 中澤泰希, 阿部健一, 須川成利, 大見忠弘
  • Organizer: 電子情報通信学会, シリコン材料・デバイス研究会
  • Place of Presentation: 仙台
  • Year and Date: 2011-10-20
• [Presentation] 埋め込み構造によるMOSFETにおけるランダム・テレグラフ・ノイズの低減 (2011)
  • Author(s): 鈴木裕彌
  • Organizer: 電子情報通信学会シリコン材料・デバイス研究会
  • Place of Presentation: 仙台
  • Year and Date: 2011-10-20
• [Presentation] 異常Stress Induced Leakage Currentの発生・回復特性の統計的評価 (2011)
  • Author(s): 稲塚卓也
  • Organizer: 電子情報通信学会シリコン材料・デバイス研究会
  • Place of Presentation: 仙台
  • Year and Date: 2011-10-20
• [Presentation] ラジカル反応ベース絶縁膜形成プロセスにおける界面平坦化効果と絶縁膜破壊特性との関係 (2011)
  • Author(s): 黒田理人
  • Organizer: 電子情報通信学会シリコン材料・デバイス研究会
  • Place of Presentation: 仙台
  • Year and Date: 2011-10-20
• [Presentation] Different properties of erbium silicides on Si(100)and Si(551)orientation surfaces (2011)
  • Author(s): H. Tanaka, A. Teramoto, R. Kuroda, Y. Nakao, T. Suwa, S. Sugawa, and T. Ohmi
  • Organizer: 220th Meeting of The Electrochemical Society
  • Place of Presentation: Boston, U. S. A.
  • Year and Date: 2011-10-13
• [Presentation] Different properties of erbium silicides on Si(100) and Si(551) orientation surfaces (2011)
  • Author(s): Hiroaki Tanaka
  • Organizer: 220th Meeting of The Electrochemical Society
  • Place of Presentation: Boston, U.S.A.
  • Year and Date: 2011-10-13
• [Presentation] Gate SiO2 Film Integrity on Ultra-Pure Argon Anneal (100)Silicon Surface (2011)
  • Author(s): A. Teramoto, X. Li, R. Kuroda, T. Suwa, S. Sugawa, and T. Ohmi
  • Organizer: 220th Meeting of The Electrochemical Society
  • Place of Presentation: Boston, U. S. A.
  • Year and Date: 2011-10-10
• [Presentation] Gate SiO_2 Film Integrity on Ultra-Pure Argon Anneal (100) Silicon Surface (2011)
  • Author(s): Akinobu Teramoto
  • Organizer: 220th Meeting of The Electrochemical Society
  • Place of Presentation: Boston, U.S.A.
  • Year and Date: 2011-10-10
• [Presentation] Impact of Random Telegraph Noise Reduction with Buried Channel MOSFET (2011)
  • Author(s): H. Suzuki, R. Kuroda, A. Teramoto, A. Yonezawa, S. Sugawa and T. Ohmi
  • Organizer: 2011 Intl. Conf. on SOLID STATE DEVICES AND MATERIALS
  • Place of Presentation: 名古屋
  • Year and Date: 2011-09-29
• [Presentation] On the Si Surface Flattening Effect and Gate Insulator Breakdown Characteristic of Radical Reaction Based Insulator Formation Technology (2011)
  • Author(s): R. Kuroda, A. Teramoto, X. Li, T. Suwa, S. Sugawa and T. Ohmi
  • Organizer: 2011 Intl. Conf. on SOLID STATE DEVICES AND MATERIALS
  • Place of Presentation: 名古屋
  • Year and Date: 2011-09-28
• [Presentation] Recovery Characteristic of Anomalous Stress Induced Leakage Current of 5. 6nm Oxide Films (2011)
  • Author(s): T. Inatsuka, Y. Kumagai, R. Kuroda, A. Teramoto, S. Sugawa, and T. Ohmi
  • Organizer: 2011 Intl. Conf. on SOLID STATE DEVICES AND MATERIALS
  • Place of Presentation: 名古屋
  • Year and Date: 2011-09-28
• [Presentation] Recovery Characteristic of Anomalous Stress Induced Leakage Current of 5.6nm Oxide Films (2011)
  • Author(s): Takuya Inatsuka
  • Organizer: 2011 International Conference on SOLID STATE DEVICES AND MATERIALS
  • Place of Presentation: 名古屋
  • Year and Date: 2011-09-28
• [Presentation] Impact of Random Telegraph Noise Reduction with Buried Channel MOSFET (2011)
  • Author(s): Hiroyoshi Suzuki
  • Organizer: 2011 International Conference on SOLID STATE DEVICES AND MATERIALS
  • Place of Presentation: 名古屋
  • Year and Date: 2011-09-28
• [Presentation] On the Si Surface Flattening Effect and Gate Insulator Breakdown Characteristic of Radical Reaction Based Insulator Formation Technology (2011)
  • Author(s): Rihito Kuroda
  • Organizer: 2011 International Conference on SOLID STATE DEVICES AND MATERIALS
  • Place of Presentation: 名古屋
  • Year and Date: 2011-09-28
• [Presentation] High Quality and Low Thermal Budget Silicon Nitride Deposition Using PECVD for Gate Spacer, Silicide Block and Contact Etch Stopper (2011)
  • Author(s): Yukihisa Nakao
  • Organizer: 2011 International Conference on SOLID STATE DEVICES AND MATERIALS
  • Place of Presentation: 名古屋
  • Year and Date: 2011-09-28
• [Presentation] Highly Ultraviolet Light Sensitive and Highly Reliable Photodiode with Atomically Flat Si Surface (2011)
  • Author(s): Rihito Kuroda
  • Organizer: 2011 International Image Sensor Workshop
  • Place of Presentation: 大沼
  • Year and Date: 2011-06-08
• [Presentation] WRGB LOFIC CMOSイメージセンサを用いた青緑及び黄色領域を含む全色域の色再現性の向上 (2011)
  • Author(s): 川田峻
  • Organizer: 社団法人映像情報メディア学会情報センシング研究会
  • Place of Presentation: 東京
  • Year and Date: 2011-05-27
• [Presentation] 10Mfps高速CMOSイメージセンサの高S/N読み出し動作 (2011)
  • Author(s): 栃木靖久
  • Organizer: 社団法人映像情報メディア学会情報センシング研究会
  • Place of Presentation: 東京
  • Year and Date: 2011-05-27
• [Presentation] バースト10Mfpsと連続10Kfpsの撮像速度を有する高速CMOSイメージセンサのプロトタイプ試作評価 (2011)
  • Author(s): 須川成利
  • Organizer: 社団法人映像情報メディア学会情報センシング研究会
  • Place of Presentation: 東京
  • Year and Date: 2011-05-13
• [Presentation] デュアルシリサイドを用いた低直列抵抗CMOS ソース/ドレイン電極形成技術 (2011)
  • Author(s): 黒田理人, 田中宏明, 中尾幸久, 寺本章伸, 宮本直人, 須川成利, 大見忠弘
  • Organizer: 電気学会, 電子デバイス研究会
  • Place of Presentation: 水上町
  • Year and Date: 2011-03-01
• [Presentation] デュアルシリサイトを用いた低直列抵抗CMOSソース/トレイン電極形成技術 (2011)
  • Author(s): 黒田理人
  • Organizer: 電気学会電子デバイス研究会
  • Place of Presentation: 水上町
  • Year and Date: 2011-03-01
• [Presentation] A prototype high-speed CMOS image sensor with 10,000,000 burst-frame rate and 10,000 continuous-frame rate (2011)
  • Author(s): Yasuhisa Tochigi
  • Organizer: IS&T/SPIE Electronic Imaging
  • Place of Presentation: San Francisco, U.S.A.
  • Year and Date: 2011-01-25
• [Presentation] A robust color signal processing with wide dynamic range WRGB CMOS image sensor (2011)
  • Author(s): Shun Kawada
  • Organizer: IS&T/SPIE Electronic Imaging
  • Place of Presentation: San Francisco, U.S.A.
  • Year and Date: 2011-01-25
• [Presentation] High reliable SiO_2 Films on Atomically Flat Silicon Surface Formed by Low Temperature Pure Ar Annealing (2011)
  • Author(s): X. Li, R. Kuroda, T. Suwa, A. Teramoto, S. Sugawa, and T. Ohmi
  • Organizer: Intl. Workshop on Dielectric Thin Films For Future Electron Devices : Science and Technology
  • Place of Presentation: 東京
  • Year and Date: 2011-01-20
• [Presentation] High reliable SiO_2 Films on Atomically Flat Silicon Surface Formed by Low Temperature Pure Ar Annealing (2011)
  • Author(s): Xiang Li
  • Organizer: International Workshop on Dielectric Thin Films For Future Electron Devices : Science and Technology
  • Place of Presentation: 東京
  • Year and Date: 2011-01-20
• [Presentation] Ultra-low Series Resistance W/ErSi_2/n^+-Si and W/Pd_2Si/p^+-Si S/D Electrodes for Advanced CMOS Platform (2010)
  • Author(s): R. Kuroda, H. Tanaka, Y. Nakao, A. Teramoto, N. Miyamoto, S. Sugawa and T. Ohmi
  • Organizer: 2010 IEEE IEEE Intl. Electron Devices Meeting
  • Place of Presentation: San Francisco, U. S. A.
  • Year and Date: 2010-12-08
• [Presentation] Ultra-low Series Resistance W/ErSi_2/n^+-Si and W/Pd_2Si/p^+-Si S/D Electrodes for Advanced CMOS Platform (2010)
  • Author(s): Rihito Kuroda
  • Organizer: IEEE International Electron Device Meeting
  • Place of Presentation: San Francisco, U.S.A.
  • Year and Date: 2010-12-08
• [Presentation] Large Scale Test Circuits for Systematic Evaluation of Variability and Noise of MOSFETs' Electrical Characteristics (2010)
  • Author(s): Y. Kumagai, K. Abe, T. Fujisawa, S. Watabe, R. Kuroda, N. Miyamoto, T. Suwa, A. Teramoto, S. Sugawa and T. Ohmi
  • Organizer: 2010 Intl. Conf. on SOLID STATE DEVICES AND MATERIALS
  • Place of Presentation: 東京
  • Year and Date: 2010-09-23
• [Presentation] Impact of Channel Direction Dependent Low Field Hole Mobility on Si(100) (2010)
  • Author(s): R. Kuroda, A. Teamoto, S. Sugawa and T. Ohmi
  • Organizer: 2010 Intl. Conf. on SOLID STATE DEVICES AND MATERIALS
  • Place of Presentation: 東京
  • Year and Date: 2010-09-23
• [Presentation] Drastic reduction of the low frequency noise in Si(100)p-MOSFETs (2010)
  • Author(s): P. Gaubert, A. Teramoto, R. Kuroda, Y. Nakao, H. Tanaka and T. Ohmi
  • Organizer: 2010 Intl. Conf. on SOLID STATE DEVICES AND MATERIALS
  • Place of Presentation: 東京
  • Year and Date: 2010-09-23
• [Presentation] Large Scale Test Circuits for Systematic Evaluation of Variability and Noise of MOSFETs' Electrical Characteristics (2010)
  • Author(s): Yuki Kumagai
  • Organizer: 2010 International Conference on SOLID STATE DEVICES AND MATERIALS
  • Place of Presentation: 東京
  • Year and Date: 2010-09-23
• [Presentation] Drastic reduction of the low frequency noise in Si (100) p-MOSFETs (2010)
  • Author(s): Phillip Gaubert
  • Organizer: 2010 International Conference on SOLID STATE DEVICES AND MATERIALS
  • Place of Presentation: 東京
  • Year and Date: 2010-09-22
• [Presentation] Impact of Channel Direction Dependent Low Field Hole Mobility on Si (100) (2010)
  • Author(s): Rihito Kuroda
  • Organizer: 2010 International Conference on SOLID STATE DEVICES AND MATERIALS
  • Place of Presentation: 東京
  • Year and Date: 2010-09-22