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Integration of 2 dimensional tunnel FET for ultra-low power consumption system

Research Project

Project/Area Number 22H04957
Research Category

Grant-in-Aid for Scientific Research (S)

Allocation TypeSingle-year Grants
Review Section Broad Section D
Research InstitutionThe University of Tokyo

Principal Investigator

長汐 晃輔  東京大学, 大学院工学系研究科(工学部), 教授 (20373441)

Co-Investigator(Kenkyū-buntansha) 上野 啓司  埼玉大学, 理工学研究科, 教授 (40223482)
宮田 耕充  国立研究開発法人物質・材料研究機構, ナノアーキテクトニクス材料研究センター, グループリーダー (80547555)
Project Period (FY) 2022-04-27 – 2027-03-31
Project Status Granted (Fiscal Year 2025)
Budget Amount *help
¥200,070,000 (Direct Cost: ¥153,900,000、Indirect Cost: ¥46,170,000)
Fiscal Year 2025: ¥18,460,000 (Direct Cost: ¥14,200,000、Indirect Cost: ¥4,260,000)
Fiscal Year 2024: ¥18,460,000 (Direct Cost: ¥14,200,000、Indirect Cost: ¥4,260,000)
Fiscal Year 2023: ¥36,400,000 (Direct Cost: ¥28,000,000、Indirect Cost: ¥8,400,000)
Fiscal Year 2022: ¥108,290,000 (Direct Cost: ¥83,300,000、Indirect Cost: ¥24,990,000)
Keywords2次元材料 / トンネルFET / ドーピング / 超低消費電力動作 / 置換型ドーピング / 超低消費電力
Outline of Research at the Start

社会基盤のデジタル・トランスフォーメーションだけでなく個人の生活様式の変革が進み,IoTデバイスの爆発的な増加が予想されるが,さらなる普及には電子デバイスの超低消費電力化が本質的なボトルネックである.本研究では,2次元材料をベースとしたトンネルトランジスタを集積化し超低消費電力動作の実証を目指す.これにより,その社会的重要性にもかかわらず見通しの立たなかった超低消費電力デバイス実現に寄与する.

Outline of Annual Research Achievements

IoTセンサーで取得したビッグデータをAl解析し,その情報を利用/反映させた社会活動を行うSociety5.0の実現にはIoTデバイスが身の回りにあることを認識しなくなるほどまでに普及することが必須である.普及の壁となっているのが,有線での電源供給であり,自立電源化が必須である.このためには,「環境発電能力の向上」だけでなく,「電子デバイスの超低消費電力化」により多くのIoTデバイスの自立電源化が可能となる.本研究では,集積デバイスにおけるボトルネックであるトランジスタの超低消費電力動作に対し2次元材料を適応することで克服することを試みる.
本年度は,以下の3項目を集中的に研究を進めた.(1)ドーピングとキャリア数の決定:P型の5%NbドープWSe2及びN型の1%ReドープMoSe2において,Hall測定の結果,どちらもトンネルFETで必要な室温で10^20 cm-3を超えるキャリア数を示す高不純物濃度結晶であることが示された.N/P両方において高濃度ドープ結晶の育成に成功した.
(2)ReドープMoSe2によるトンネルFET特性評価
P型としては高濃度ReドープMoSe2において同一結晶面内構造のFETデバイスを作製した.タイプIIからタイプIIIのバンドアライメントに連続的に変化している様子を観測した.これによりトンネルFETにおけるP型及びN型動作を達成した.
(3)ウエハースケールデバイス特性
膜均一性とスケールアップの両立が可能である有機金属気相成長法において2インチサファイア基板上に製膜されたMoS2において324個のFETを作製し特性評価を行い,典型的な移動度28 cm2/Vs程度を得た.この移動度は,世界的なMOCVD研究でのMoS2と同等であり,今後のウエハースケールでのトンネルFETの集積化の基礎となる.

Current Status of Research Progress
Current Status of Research Progress

2: Research has progressed on the whole more than it was originally planned.

Reason

以下にこれまでに達成した項目を示す.
(1)2次元材料のドーピングと成長:・Nb,Reの置換によりN型P型共に10^20 cm-3以上のキャリア数を達成した.(2)デバイス要素技術:同一結晶面内接合構造の作製技術として,トップダウン手法であるlayer-by-layerの酸化技術の確立,及びボトムアップ手法であるCVD成長による構造作製に成功した.(3)デバイス評価及び集積化:P型及びN型トンネルFET動作を実証した.また,MOCVDによる2インチウエハー上MoS2のデバイス化プロセスを確立した.
上記の結果に対して,投稿論文15報を報告し,60件以上の学会発表を行った(招待講演は25研以上).
これらの結果より,順調に研究が進展しているといえる.

Strategy for Future Research Activity

(1)不純物置換により原子欠陥の増加問題:高不純物濃度結晶は,トンネルFETに必須であり10^20 cm-3以上のキャリア数を今回の研究で達成したが,Nb置換が起こると10^12 cm-2以上のS欠陥が同時に形成され,逆に,Re置換はS欠陥を減少させることが分かってきた.①最適な含塩素原料の選定,②最適なCVT成長温度条件の探索,③Re,Nb以外の元素の可能性探索等の課題を進め,欠陥との関係を詳細に調べる.
(2)「同一結晶面内接合構造」作製のボトムアップ手法:CVDを利用したTMDC合成技術およびキャリア制御技術の開発,および輸送特性の解明を行う.具体的には,TMDCおよび不純物原料の選定,成長温度,基板,ドープ手法を検討する.作製した試料については,ホール効果によるキャリア密度の測定,電子顕微鏡による不純物観測等の評価を行う.
(3)デバイス評価及び集積化:トンネルFETデバイスにおけるオン電流の向上において,N型と比較してコンタクト形成の困難なP型コンタクト抵抗の低減に取り組む.金属蒸着時の欠陥形成によりFermi level pinning(FLP)が起こりSchottky障壁高さが固定されると考えられ,P型動作が困難である.低融点Biを超高真空中で堆積することで,2次元結晶表面に欠陥形成なくvan der Waals的に原子が揃うような堆積が可能である.Bi上に仕事関数の高いPt(~5.4 eV)を堆積し,アニールにより拡散による入れ替わり偏析を利用して,Ptコンタクトをとることで,P型用の低抵抗コンタクトを実証する.

Assessment Rating
Interim Assessment Comments (Rating)

A: In light of the aim of introducing the research area into the research categories, the expected progress has been made in research.

Report

(5 results)
  • 2024 Interim Assessment (Comments) ( PDF )
  • 2023 Annual Research Report
  • 2022 Abstract ( PDF )   Comments on the Screening Results   Annual Research Report
  • Research Products

    (48 results)

All 2024 2023 2022 2021 Other

All Int'l Joint Research (2 results) Journal Article (16 results) (of which Int'l Joint Research: 7 results,  Peer Reviewed: 16 results,  Open Access: 9 results) Presentation (25 results) (of which Int'l Joint Research: 17 results,  Invited: 25 results) Book (2 results) Remarks (3 results)

  • [Int'l Joint Research] TSMC, Taiwan(その他の国・地域)

    • Related Report
      2023 Annual Research Report
  • [Int'l Joint Research] TSMC, Taiwan(その他の国・地域)

    • Related Report
      2022 Annual Research Report
  • [Journal Article] A Monolayer MoS2 FET with an EOT of 1.1 nm Achieved by the Direct Formation of a High-k Er2O3 Insulator Through Thermal Evaporation2023

    • Author(s)
      Uchiyama Haruki、Maruyama Kohei、Chen Edward、Nishimura Tomonori、Nagashio Kosuke
    • Journal Title

      Small

      Volume: 19 Issue: 15 Pages: 2207394-2207394

    • DOI

      10.1002/smll.202207394

    • Related Report
      2023 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Experimental verification of SO2 and S desorption contributing to defect formation in MoS2 by thermal desorption spectroscopy2023

    • Author(s)
      Li Shuhong、Nishimura Tomonori、Maruyama Mina、Okada Susumu、Nagashio Kosuke
    • Journal Title

      Nanoscale Advances

      Volume: 5 Issue: 2 Pages: 405-411

    • DOI

      10.1039/d2na00636g

    • Related Report
      2023 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Multilayer In-Plane Heterostructures Based on Transition Metal Dichalcogenides for Advanced Electronics2023

    • Author(s)
      Ogura Hiroto、Kawasaki Seiya、Liu Zheng、Endo Takahiko、Maruyama Mina、Gao Yanlin、Nakanishi Yusuke、Lim Hong En、Yanagi Kazuhiro、Irisawa Toshifumi、Ueno Keiji、Okada Susumu、Nagashio Kosuke、Miyata Yasumitsu
    • Journal Title

      ACS Nano

      Volume: 17 Issue: 7 Pages: 6545-6554

    • DOI

      10.1021/acsnano.2c11927

    • Related Report
      2023 Annual Research Report
    • Peer Reviewed
  • [Journal Article] From h‐BN to Graphene: Characterizations of Hybrid Carbon‐Doped h‐BN for Applications in Electronic and Optoelectronic Devices2023

    • Author(s)
      Ngamprapawat Supawan、Kawase Jimpei、Nishimura Tomonori、Watanabe Kenji、Taniguchi Takashi、Nagashio Kosuke
    • Journal Title

      Advanced Electronic Materials

      Volume: 9 Issue: 8 Pages: 2300083-2300083

    • DOI

      10.1002/aelm.202300083

    • Related Report
      2023 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] p-Type Conversion of WS2 and WSe2 by Position-Selective Oxidation Doping and Its Application in Top Gate Transistors2023

    • Author(s)
      Kato Ryoichi、Uchiyama Haruki、Nishimura Tomonori、Ueno Keiji、Taniguchi Takashi、Watanabe Kenji、Chen Edward、Nagashio Kosuke
    • Journal Title

      ACS Applied Materials and Interfaces

      Volume: 15 Issue: 22 Pages: 26977-26984

    • DOI

      10.1021/acsami.3c04052

    • Related Report
      2023 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Shift‐Current Photovoltaics Based on a Non‐Centrosymmetric Phase in In‐Plane Ferroelectric SnS2023

    • Author(s)
      Chang Yih‐Ren、Nanae Ryo、Kitamura Satsuki、Nishimura Tomonori、Wang Haonan、Xiang Yubei、Shinokita Keisuke、Matsuda Kazunari、Taniguchi Takashi、Watanabe Kenji、Nagashio Kosuke
    • Journal Title

      Advanced Materials

      Volume: 35 Issue: 29 Pages: 2301172-2301172

    • DOI

      10.1002/adma.202301172

    • Related Report
      2023 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Resonant exciton transfer in mixed-dimensional heterostructures for overcoming dimensional restrictions in optical processes2023

    • Author(s)
      Fang N.、Chang Y. R.、Yamashita D.、Fujii S.、Maruyama M.、Gao Y.、Fong C. F.、Otsuka K.、Nagashio K.、Okada S.、Kato Y. K.
    • Journal Title

      Nature Communications

      Volume: 14 Issue: 1 Pages: 8152-8159

    • DOI

      10.1038/s41467-023-43928-2

    • Related Report
      2023 Annual Research Report
    • Peer Reviewed / Open Access / Int'l Joint Research
  • [Journal Article] High-throughput dry transfer and excitonic properties of twisted bilayers based on CVD-grown transition metal dichalcogenides2023

    • Author(s)
      Naito Hibiki、Makino Yasuyuki、Zhang Wenjin、Ogawa Tomoya、Endo Takahiko、Sannomiya Takumi、Kaneda Masahiko、Hashimoto Kazuki、Lim Hong En、Nakanishi Yusuke、Watanabe Kenji、Taniguchi Takashi、Matsuda Kazunari、Miyata Yasumitsu
    • Journal Title

      Nanoscale Advances

      Volume: 5 Issue: 18 Pages: 5115-5121

    • DOI

      10.1039/d3na00371j

    • Related Report
      2022 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Wavelength dependence of polarization-resolved second harmonic generation from ferroelectric SnS few layers2022

    • Author(s)
      Moqbel Redhwan、Chang Yih-Ren、Li Zi-Yi、Kung Sheng-Hsun、Cheng Hao-Yu、Lee Chi-Cheng、Nagashio Kosuke、Lin Kung-Hsuan
    • Journal Title

      2D Materials

      Volume: 10 Issue: 1 Pages: 015022-015022

    • DOI

      10.1088/2053-1583/acab74

    • Related Report
      2023 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Science of 2.5 dimensional materials: paradigm shift of materials science toward future social innovation2022

    • Author(s)
      Ago Hiroki、Okada Susumu、Miyata Yasumitsu、Matsuda Kazunari、Koshino Mikito、Ueno Kosei、Nagashio Kosuke
    • Journal Title

      Science and Technology of Advanced Materials

      Volume: - Issue: 1 Pages: 275-299

    • DOI

      10.1080/14686996.2022.2062576

    • Related Report
      2022 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Performance Enhancement of SnS/{\it h}-BN Heterostructure p-Type FET via the Thermodynamically Predicted Surface Oxide Conversion Method2022

    • Author(s)
      Chang Yih-Ren、Nishimura Tomonori、Taniguchi Takashi、Watanabe Kenji、Nagashio Kosuke
    • Journal Title

      ACS Applied Materials & Interfaces

      Volume: 14 Issue: 17 Pages: 19928-19937

    • DOI

      10.1021/acsami.2c05534

    • Related Report
      2022 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Ultrafast Operation of 2D Heterostructured Nonvolatile Memory Devices Provided by the Strong Short-Time Dielectric Breakdown Strength of h-BN2022

    • Author(s)
      T. Sasaki, K. Ueno, T. Taniguchi, K. Watanabe, T. Nishimura, and K. Nagashio
    • Journal Title

      ACS Appl. Mater. Interfaces

      Volume: 14 Issue: 22 Pages: 25659-25669

    • DOI

      10.1021/acsami.2c03198

    • Related Report
      2022 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Current Injection into Single-Crystalline Carbon-Dope h-BN toward Electronic and Optoelectronic Applications2022

    • Author(s)
      Ngamprapawat Supawan、Nishimura Tomonori、Watanabe Kenji、Taniguchi Takashi、Nagashio Kosuke
    • Journal Title

      ACS Applied Materials and Interfaces

      Volume: 14 Issue: 22 Pages: 25731-25740

    • DOI

      10.1021/acsami.2c04544

    • Related Report
      2022 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Quantization of Mode Shifts in Nanocavities Integrated with Atomically Thin Sheets2022

    • Author(s)
      Fang Nan、Yamashita Daiki、Fujii Shun、Otsuka Keigo、Taniguchi Takashi、Watanabe Kenji、Nagashio Kosuke、Kato Yuichiro K.
    • Journal Title

      Advanced Optical Materials

      Volume: 10 Issue: 19 Pages: 2200538-2200538

    • DOI

      10.1002/adom.202200538

    • Related Report
      2022 Annual Research Report
    • Peer Reviewed / Open Access / Int'l Joint Research
  • [Journal Article] Is band gap of bulk PdSe2 located really in far infrared region? Determination by Fourier Transform Photocurrent Spectroscopy2022

    • Author(s)
      W. Nishiyama, T. Nishimura, M. Nishioka, K. Ueno, S. Iwamoto, and K. Nagashio
    • Journal Title

      Adv. Photonics Res.

      Volume: 3 Issue: 11 Pages: 231-232

    • DOI

      10.1002/adpr.202200231

    • Related Report
      2022 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Quantitative determination of contradictory bandgap values of bulk PdSe2 from electrical transport properties2021

    • Author(s)
      Nishiyama Wataru、Nishimura Tomonori、Ueno Keiji、Taniguchi Takashi、Watanabe Kenji、Nagashio Kosuke
    • Journal Title

      Advanced Functional Materials

      Volume: 32 Issue: 9 Pages: 2108061-2108061

    • DOI

      10.1002/adfm.202108061

    • Related Report
      2022 Annual Research Report
    • Peer Reviewed / Open Access
  • [Presentation] " 2次元層状材料トランジスタの発表から約10年 ー課題と将来展望ー",2024

    • Author(s)
      長汐晃輔
    • Organizer
      日本学術振興会 R031 ハイブリッド量子ナノ技術委員会第14回研究会
    • Related Report
      2023 Annual Research Report
    • Invited
  • [Presentation] " 2次元層状強誘電SnSにおけるバルク光起電力効果",2024

    • Author(s)
      長汐晃輔
    • Organizer
      Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS-27)
    • Related Report
      2023 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Low-dimensional nanostructures of Janus TMDs2024

    • Author(s)
      Y. Miyata
    • Organizer
      International Workshop on Science of 2.5 Dimensional Materials
    • Related Report
      2023 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] 遷移金属ダイカルコゲナイドヘテロ構造の作製と評価2024

    • Author(s)
      宮田耕充
    • Organizer
      応用物理学会応用電子物性分科会主催 応用電子物性分科会 研究例会 2次元層状物質研究の最前線
    • Related Report
      2023 Annual Research Report
    • Invited
  • [Presentation] Growth and Characterization of 1D Transition Metal Chalcogenides2024

    • Author(s)
      Y. Miyata
    • Organizer
      International Winterschool on Electronic Properties of Novel Materials 2024
    • Related Report
      2023 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] “Inversion Symmetry Broken Bulk SnS Formed by Step-edge-induced Spiral Growth for Energy Harvesting”2023

    • Author(s)
      Kosuke Nagashio
    • Organizer
      3rd Nucleation and Growth Research Conference (NGRC)
    • Related Report
      2023 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] “2D layered semiconductors: Challenge & Perspective”2023

    • Author(s)
      Kosuke Nagashio
    • Organizer
      36th International Microprocesses and Nanotechnology Conference (MNC)
    • Related Report
      2023 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] “Shift current photovoltaics in ferroelectric SnS”2023

    • Author(s)
      Kosuke Nagashio
    • Organizer
      International Conference on Materials and Systems for Sustainability 2023(ICMaSS)
    • Related Report
      2023 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] 1D nanostructures based on transition metal chalcogenides2023

    • Author(s)
      Y. Miyata
    • Organizer
      6th EU‐Japan Workshop on Graphene and Related 2D Materials
    • Related Report
      2023 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] 1D Transition Metal Chalcogenides: Growth, Structures, and Properties2023

    • Author(s)
      Y. Miyata
    • Organizer
      NT23
    • Related Report
      2023 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] 1D nanostructures based on transition metal chalcogenides2023

    • Author(s)
      Y. Miyata
    • Organizer
      2DTMDCs
    • Related Report
      2023 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Low-dimensional nanostructures of Janus transition metal dichalcogenides2023

    • Author(s)
      Y. Miyata
    • Organizer
      13th A3 Symposium on Emerging Materials
    • Related Report
      2023 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] 遷移金属ダイカルコゲナイドの合成と機能2023

    • Author(s)
      宮田耕充
    • Organizer
      化学工学会CVD反応分科会 第39回シンポジウム「二次元材料の合成と応用の最新動向と展望」
    • Related Report
      2023 Annual Research Report
    • Invited
  • [Presentation] Growth and Characterization of 1D Transition Metal Chalcogenides2023

    • Author(s)
      Y. Miyata
    • Organizer
      Mini-Workshop at NTNU-Physics
    • Related Report
      2023 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Device Technology for 2D Layered Semiconductor FETs: Challenge & Perspective2023

    • Author(s)
      Kosuke Nagashio
    • Organizer
      2023 Symposia on VLSI Technology and Circuits
    • Related Report
      2023 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] “50 Ns Ultrafast Memory Operation in 2D Heterostructured Non-Volatile Memory Device”2022

    • Author(s)
      K. Nagashio,
    • Organizer
      241st ECS Meeting
    • Related Report
      2022 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] “Ultrafast Memory Operation in 2D Heterostructured Non-Volatile Memory Device”,2022

    • Author(s)
      K. Nagashio,
    • Organizer
      The 22nd Int. Conf. on Sci & Appl. of Nanotubes and Low-dimensional Materials (NT22)
    • Related Report
      2022 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] “Novel high-k insulator deposition on 2D materials for future electronics”,2022

    • Author(s)
      Kosuke Nagashio,
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM)
    • Related Report
      2022 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] “Consider the S vacancy formation in MoS2”,2022

    • Author(s)
      Kosuke Nagashio,
    • Organizer
      A3 Foresight International Symposium 2022
    • Related Report
      2022 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] 一次元遷移金属カルコゲナイドの成長と評価2022

    • Author(s)
      宮田耕充
    • Organizer
      ナノ科学シンポジウム 2022
    • Related Report
      2022 Annual Research Report
    • Invited
  • [Presentation] Growth of one-dimensional transition metal chalcogenides2022

    • Author(s)
      Yasumitsu Miyata
    • Organizer
      2th A3 Symposium on Emerging Materials
    • Related Report
      2022 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] 2次元層状SnSの強誘電特性と自発起電力発電への展開2022

    • Author(s)
      長汐晃輔
    • Organizer
      日本セラミックス協会第35回秋季シンポジウム
    • Related Report
      2022 Annual Research Report
    • Invited
  • [Presentation] 超高速 2D フラッシュメモリーの実証2022

    • Author(s)
      長汐晃輔
    • Organizer
      第86回半導体・集積回路技術シンポジウム
    • Related Report
      2022 Annual Research Report
    • Invited
  • [Presentation] 2次元層状物質の新機能デバイスへの展開2022

    • Author(s)
      長汐晃輔
    • Organizer
      光電相互変換第125委員会第260回研究会
    • Related Report
      2022 Annual Research Report
    • Invited
  • [Presentation] MoS2 FETから10年:何が解決して何が未解決なのか?2022

    • Author(s)
      長汐晃輔
    • Organizer
      2022年第69回応用物理学会春季学術講演会
    • Related Report
      2022 Annual Research Report
    • Invited
  • [Book] 遷移金属ダイカルコゲナイドの基礎と最新動向2023

    • Author(s)
      宮田耕充、吾郷浩樹、松田一成、長汐晃輔
    • Total Pages
      120
    • Publisher
      シーエムシー出版
    • ISBN
      9784781317588
    • Related Report
      2023 Annual Research Report
  • [Book] 固体物理2023

    • Author(s)
      越野幹人,松田一成,岩佐義宏,谷口尚,町田友樹,長汐晃輔,末永和知,佐藤宇史,中野匡規,花栗哲郎,島崎佑也,笹川崇男,山本倫久,斎藤優
    • Total Pages
      204
    • Publisher
      アグネ技術センター
    • Related Report
      2023 Annual Research Report
  • [Remarks] 長汐研@東大

    • URL

      https://webpark1753.sakura.ne.jp/nagashio_lab/

    • Related Report
      2023 Annual Research Report 2022 Annual Research Report
  • [Remarks] 宮田研@都立大

    • URL

      https://nanotube.fpark.tmu.ac.jp/index.html

    • Related Report
      2023 Annual Research Report 2022 Annual Research Report
  • [Remarks] 上野研@埼玉大

    • URL

      https://surface-www.chem.saitama-u.ac.jp/

    • Related Report
      2023 Annual Research Report 2022 Annual Research Report

URL: 

Published: 2022-04-28   Modified: 2025-06-20  

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