Creation of New Functionalities by Integration of Room-Temperature Operating Single Electron Transistors and Large-Scale CMOS Circuits

• Project/Area Number: 23246064
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: The University of Tokyo
• Principal Investigator: Hiramoto Toshiro 東京大学, 生産技術研究所, 教授 (20192718)
• Co-Investigator(Renkei-kenkyūsha): Saraya Takuya 東京大学, 生産技術研究所, 助手 (90334367)
• Project Period (FY): 2011-04-01 – 2016-03-31
• Project Status: Completed (Fiscal Year 2015)
• Budget Amount: ¥48,880,000 (Direct Cost: ¥37,600,000、Indirect Cost: ¥11,280,000); Fiscal Year 2014: ¥9,100,000 (Direct Cost: ¥7,000,000、Indirect Cost: ¥2,100,000); Fiscal Year 2013: ¥9,360,000 (Direct Cost: ¥7,200,000、Indirect Cost: ¥2,160,000); Fiscal Year 2012: ¥14,170,000 (Direct Cost: ¥10,900,000、Indirect Cost: ¥3,270,000); Fiscal Year 2011: ¥16,250,000 (Direct Cost: ¥12,500,000、Indirect Cost: ¥3,750,000)
• Keywords: 単電子トランジスタ / Beyond CMOS / CMOS / 集積回路 / MOSFET / クーロンブロッケード振動 / ナノワイヤ / 半導体物性 / 大規模集積回路 / ナノワイヤトランジスタ / 特性ばらつき / 電子デバイス・機器

Outline of Final Research Achievements

The objective of this research is to create new functionalities by the integration of room-temperature operating silicon single electron transistors and CMOS circuits. By establish the fabrication process of the integration of silicon single electron transistors and CMOS circuits, the control of single electron transistors by CMOS circuits have been successfully demonstrated.

Research Products

• [Journal Article] Peak Position Control of Coulomb Blockade Oscillations in Silicon Single-Electron Transistors with Floating Gate Operating at Room Temperature (2014)
  • Author(s): Yuma Tanahashi, Ryota Suzuki, Takuya Saraya, Toshiro Hiramoto
  • Journal Title: Japanese Journal of Applied Physics Volume: 53 Issue: 4S Pages: 04EJ08-04EJ08
  • DOI: 10.7567/jjap.53.04ej08
  • NAID: 210000143664
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Experimental Observation of Quantum Confinement Effect in (110) and (100) Silicon Nanowire Field-Effect Transistors and Single-Electron/Hole Transistors Operating at Room Temperature (2013)
  • Author(s): Ryota Suzuki, Motoki Nozue, Takuya Saraya, and Toshiro Hiramoto
  • Journal Title: Japanese Journal of Applied Physics Volume: 52 Issue: 10R Pages: 104001-104001
  • DOI: 10.7567/jjap.52.104001
  • NAID: 40022765823
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Integration of Complementary Metal-Oxide-Semiconductor 1-Bit Analog Selectors and Single-Electron Transistors Operating at Room Temperature (2013)
  • Author(s): Ryota Suzuki, Motoki Nozue, Takuya Saraya, and Toshiro Hiramoto
  • Journal Title: Japanese Journal of Applied Physics Volume: 52 Issue: 4S Pages: 04CJ05-04CJ05
  • DOI: 10.7567/jjap.52.04cj05
  • Peer Reviewed
• [Presentation] Increased Drain-Induced Variability and Within-Device Variability in Extremely Narrow Silicon Nanowire MOSFETs with Width down to 2nm (2016)
  • Author(s): Tomoko Mizutani
  • Organizer: IEEE Silicon Nanoelectronics Workshop
  • Place of Presentation: Honolulu, HI. USA
  • Year and Date: 2016-06-12
  • Int'l Joint Research
• [Presentation] Threshold Voltage and Current Variability of Extremely Narrow Silicon Nanowire MOSFETs with Width down to 2nm (2015)
  • Author(s): T. Mizutani
  • Organizer: Silicon Nanoelectronics Workshop
  • Place of Presentation: Rihga Royal Hotel Kyoto, Kyoto
  • Year and Date: 2015-06-14
  • Int'l Joint Research
• [Presentation] 浮遊ゲートを有する室温動作シリコン単電子トランジスタにおけるクーロンブロッケード振動のピーク位置制御 (2014)
  • Author(s): 棚橋裕麻，鈴木龍太，更屋拓哉，平本俊郎
  • Organizer: 2014年第61回応用物理学会春季学術講演会
  • Place of Presentation: 青山学院大学相模原キャンパス
  • Year and Date: 2014-03-19
• [Presentation] Peak Position Control of Coulomb Oscillations in Silicon Single-Electron Transistors with Floating Gate Operating at Room Temperature (2013)
  • Author(s): Yuma Tanahashi, Ryota Suzuki, Takuya Saraya, and Toshiro Hiramoto
  • Organizer: 2013 International Conference on Solid State Devices and Materials (SSDM)
  • Place of Presentation: Fukuoka
  • Year and Date: 2013-09-26
• [Presentation] Integration of Room-Temperature Operating Silicon Single-Electron Transistors and CMOS Circuits for Novel Information Processing (2013)
  • Author(s): Toshiro Hiramoto, Ryota Suzuki, and Takuya Saraya
  • Organizer: 9th International Nanotechnology Conference on Communication and Cooperation (INC9)
  • Place of Presentation: Berlin, Germany
  • Year and Date: 2013-05-16
• [Presentation] Integration of Room-Temperature Operating Single-Electron Transistors with CMOS Circuits (2013)
  • Author(s): Toshiro Hiramoto, Ryota Suzuki, and Takuya Saraya
  • Organizer: Sweden-Japan Workshop on Quantum Nano-Physics and Electronics (QNANO2013)
  • Place of Presentation: Tokyo
• [Presentation] 室温動作単電子トランジスタとCMOS 1-bitアナログセレクタの集積化 (2013)
  • Author(s): 鈴木龍太，野末喬城，更屋拓哉，平本俊郎
  • Organizer: 電子情報通信学会シリコンデバイス・材料(SDM)研究会
  • Place of Presentation: 北海道大学
• [Presentation] 単電子トランジスタとCMOS回路の集積化に関する研究 (2013)
  • Author(s): 鈴木龍太，野末喬城，更屋拓哉，平本俊郎
  • Organizer: 固体エレクトロニクス・光エレクトロニクス研究会
  • Place of Presentation: 東京大学
• [Presentation] 室温動作シリコン単電子トランジスタとCMOSアナログセレクタ回路の集積化 (2013)
  • Author(s): 鈴木龍太，野末喬城，更屋拓哉，平本俊郎
  • Organizer: 2013年春季第60回応用物理学関係連合講演会
  • Place of Presentation: 神奈川工科大学
• [Presentation] Fully CMOS-Compatible Fabrication Process of Room-Temperature Operating Silicon Single-Electron Transistors (2012)
  • Author(s): Ryota Suzuki, Motoki Nozue, Takuya Saraya, and Toshiro Hiramoto
  • Organizer: 8th International Nanotechnology Conference on Communication and Cooperation (INC8)
  • Place of Presentation: Tsukuba
• [Presentation] Reinvestigation of Dot Formation Mechanisms in Silicon Nanowire Channel Single-Electron/Hole Transistors Operating at Room Temperature (2012)
  • Author(s): Ryota Suzuki, Motoki Nozue, Takuya Saraya, and Toshiro Hiramoto
  • Organizer: IEEE Silicon Nanoelectronics Workshop
  • Place of Presentation: Honolulu, HI. USA
• [Presentation] Integration of 1-bit CMOS Address Decoders and Single-Electron Transistors Operating at Room Temperature (2012)
  • Author(s): Ryota Suzuki, Motoki Nozue, Takuya Saraya, and Toshiro Hiramoto
  • Organizer: 2012 International Conference on Solid State Devices and Materials (SSDM)
  • Place of Presentation: Kyoto
• [Presentation] シリコンナノワイヤチャネルを有する室温動作単電子/単正孔トランジスタにおけるドット形成メカニズム (2012)
  • Author(s): 鈴木龍太，野末喬城，更屋拓哉，平本俊郎
  • Organizer: 2012年秋季第73回応用物理学会学術講演会
  • Place of Presentation: 愛媛大学
• [Presentation] Characteristics Control of Single Electron Transistor with Floating Gate by Charge Pump Circuit (2012)
  • Author(s): Motoki Nozue
  • Organizer: 13th International Conference on Ultimate Integration of Silicon
  • Place of Presentation: Minatech, Grenoble, France
• [Presentation] 完全CMOS互換室温動作シリコン単電子トランジスタ作製プロセス (2012)
  • Author(s): 鈴木龍太
  • Organizer: 2012年春季第59回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学早稲田キャンパス
• [Presentation] チャージポンプ回路による浮遊ゲート単電子トランジスタの特性制御 (2012)
  • Author(s): 野末喬城
  • Organizer: 2012年春季第59回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学早稲田キャンパス
• [Presentation] チャージポンプ回路を利用したフローティングゲートMOSFETのしきい値電圧制御 (2011)
  • Author(s): 野末喬城
  • Organizer: 第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学小白川キャンパス