Process development for high-performance highly-strained quantum-heterostructure resonant-tunneling devices of group-IV semiconductors

• Project/Area Number: 23360003
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Tohoku University
• Principal Investigator: SAKURABA Masao 東北大学, 電気通信研究所, 准教授 (30271993)
• Co-Investigator(Kenkyū-buntansha): MUROTA Junichi 東北大学, 電気通信研究所, 教授 (70182144)
• Project Period (FY): 2011-04-01 – 2014-03-31
• Project Status: Completed (Fiscal Year 2013)
• Budget Amount: ¥20,410,000 (Direct Cost: ¥15,700,000、Indirect Cost: ¥4,710,000); Fiscal Year 2013: ¥7,020,000 (Direct Cost: ¥5,400,000、Indirect Cost: ¥1,620,000); Fiscal Year 2012: ¥7,410,000 (Direct Cost: ¥5,700,000、Indirect Cost: ¥1,710,000); Fiscal Year 2011: ¥5,980,000 (Direct Cost: ¥4,600,000、Indirect Cost: ¥1,380,000)
• Keywords: エピタキシャル成長 / プラズマ / 化学気相成長 / IV族半導体 / Si / Ge / SiGe混晶 / ドーピング / ヘテロ構造 / 量子デバイス / 室温動作

Research Abstract

By using elctron-cyclotron-resonance plasma chemical vapor deposition, epitaxial growth of highly-strained SiGe alloy and Ge films on Si(100) with smooth surface and heavy B doping into Si and Ge epitaxial films can be realized. Nitrogen atomic-layer doping process and its effects upon hole tunneling characteristics of Si barriers in the strained SiGe/Si(100) hole resonant tunneling diode were also investigated.

Research Products

• [Journal Article] Epitaxial Growth of B-Doped Si on Si(100) by Electron-Cyclotron- Resonance Ar Plasma Chemical Vapor Deposition in a SiH_4-B_2H_6-H_2 Gas Mixture without Substrate (2014)
  • Author(s): Y.Abe, M.Sakuraba and J.Murota
  • Journal Title: Thin Solid Films Volume: Vol.557 Pages: 10-13
  • DOI: 10.1016/j.tsf.2013.08.118
  • Peer Reviewed
• [Journal Article] Epitaxial Growth of Si1-xGex Alloys and Ge on Si(100) by Electron-Cyclotron-Resonance Ar Plasma Chemical Vapor Deposition without Substrate Heating (2014)
  • Author(s): N.Ueno, M.Sakuraba, S.Sato and J.Murota
  • Journal Title: Thin Solid Films Volume: Vol.557 Pages: 31-35
  • DOI: 10.1016/j.tsf.2013.11.023
  • Peer Reviewed
• [Journal Article] Nitrogen Doping Effect upon Hole Tunneling Characteristics of Si Barriers in Si_<1-x>Ge_x/Si Resonant Tunneling Diode (2014)
  • Author(s): T.Kawashima, M.Sakuraba and J.Murota
  • Journal Title: Thin Solid Films Volume: Vol.557 Pages: 302-306
  • DOI: 10.1016/j.tsf.2013.08.124
  • Peer Reviewed
• [Journal Article] Group-IV Semiconductor Quantum Heterointegration by Low-Energy Plasma CVD Processing (2013)
  • Author(s): M.Sakuraba and J.Murota
  • Journal Title: ECS Trans. Volume: Vol.58, No.9 Issue: 9 Pages: 195-200
  • DOI: 10.1149/05809.0195ecst
  • Peer Reviewed
• [Journal Article] Formation and Characterization of Strained Si_<1-x>Ge_x Films Epitaxially Grown on Si(100) by Low-Energy ECR Ar plasma CVD without Substrate Heating (2013)
  • Author(s): N.Ueno, M.Sakuraba, J.Murota and S.Sato
  • Journal Title: ECS Trans. Volume: Vol.58, No.9 Issue: 9 Pages: 207-211
  • DOI: 10.1149/05809.0207ecst
  • Peer Reviewed
• [Journal Article] Epitaxial Growth of Heavily B-Doped Si and Ge Films on Si(100) by Low-Energy ECR Ar Plasma CVD without Substrate Heating (2013)
  • Author(s): Y.Abe, S.Kubota, M.Sakuraba, J.Murota and S.Sato
  • Journal Title: ECS Trans. Volume: Vol.58, No.9 Issue: 9 Pages: 223-228
  • DOI: 10.1149/05809.0223ecst
  • Peer Reviewed
• [Journal Article] Behavior of N Atoms after Thermal Nitridation of Si_<1-x>Ge_x Surface (2012)
  • Author(s): T.Kawashima, M.Sakuraba, B.Tillack and J.Murota
  • Journal Title: Thin Solid Films Volume: Vol.520 Issue: 8 Pages: 3392-3396
  • DOI: 10.1016/j.tsf.2011.10.108
  • Peer Reviewed
• [Journal Article] Atomically Controlled Formation of Strained Si_<1-x>Ge_x/Si Quantum Heterostructure for Room- Temperature Resonant Tunneling Diode (2011)
  • Author(s): M.Sakuraba and J.Murota
  • Journal Title: ECS Trans. Volume: Vol.41,No.7 Issue: 7 Pages: 337-343
  • DOI: 10.1149/1.3633314
  • Peer Reviewed
• [Journal Article] Atomically Controlled Plasma Processing for Quantum Heterointegration of Group IV Semiconductors (2011)
  • Author(s): M.Sakuraba and J.Murota
  • Journal Title: ECS Trans. Volume: Vol.41, No.7 Issue: 7 Pages: 309-314
  • DOI: 10.1149/1.3633311
  • Peer Reviewed
• [Presentation] Characterization of Strain in Si_<1-x>Ge_x Films Epitaxially Grown on Si(100) by ECR Ar Plasma CVD without Substrate Heating (2014)
  • Author(s): N.Ueno, M.Sakuraba, J.Murota and S. ato
  • Organizer: 7th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
  • Place of Presentation: Tohoku Univ., Sendai, Japan (Abs.No.P-21)
• [Presentation] Characterization of Strain in Si1-xGex Films Epitaxially Grown on Si(100) by ECR Ar Plasma CVD without Substrate Heating (2014)
  • Author(s): N. Ueno, M. Sakuraba, J. Murota and S. Sato
  • Organizer: 7th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", Abs.No.P-21.
  • Place of Presentation: Sendai, Japan
• [Presentation] Group-IV Semiconductor Quantum Heterointegration by Low-Energy Plasma CVD Processing (2013)
  • Author(s): M.Sakuraba and J.Murota
  • Organizer: Symp. E12: ULSI Process Integration 8
  • Place of Presentation: San Francisco, USA (Abs. 224th Electrochem. Soc. Meeting, Abs.No.2226)
  • Invited
• [Presentation] Formation and Characterization of Strained Si_<1-x>Ge_x Films Epitaxially Grown on Si(100) by Low-Energy ECR Ar plasma CVD without Substrate Heating (2013)
  • Author(s): N.Ueno, M.Sakuraba, J.Murota and S.Sato
  • Organizer: Symp. E12: ULSI Process Integration 8
  • Place of Presentation: San Francisco, USA (Abs. 224th Electrochem. Soc. Meeting, Abs.No.2228)
• [Presentation] Epitaxial Growth of Heavily B-Doped Si and Ge Films on Si(100) by Low-Energy ECR Ar Plasma CVD without Substrate Heating (2013)
  • Author(s): Y.Abe, S.Kubota, M.Sakuraba, J.Murota and S.Sato
  • Organizer: Symp. E12: ULSI Process Integration 8
  • Place of Presentation: San Francisco, USA (Abs. 224th Electrochem. Soc. Meeting, Abs.No.2230)
• [Presentation] Epitaxial Growth of B-Doped Si on Si(100) by ECR Ar Plasma CVD in a SiH_4-B_2H_6-H_2 Gas Mixture without Substrate Heating (2013)
  • Author(s): Y.Abe, M.Sakuraba and J.Murota
  • Organizer: 8th Int. Conf. on Si Epitaxy and Heterostructures
  • Place of Presentation: Fukuoka, Japan (Abs.No.P1-4)
• [Presentation] Epitaxial Growth of Si_<1-x>Ge_x Alloy on Si(100) by ECR Ar Plasma CVD in a SiH_4-GeH_4 Gas Mixture without Substrate Heating (2013)
  • Author(s): N.Ueno, M.Sakuraba, J.Murota and S.Sato
  • Organizer: 8th Int. Conf. on Si Epitaxy and Heterostructures
  • Place of Presentation: Fukuoka, Japan (Abs.No.P1-8)
• [Presentation] Nitrogen Doping Effect upon Hole Tunneling Characteristics of Si Barriers in Si_<1-x>Ge_x/Si Resonant Tunneling Diode (2013)
  • Author(s): T.Kawashima, M.Sakuraba and J.Murota
  • Organizer: 8th Int. Conf. on Si Epitaxy and Heterostructures
  • Place of Presentation: Fukuoka, Japan (Abs.No.P1-27)
• [Presentation] Atomically Controlled Plasma CVD Processing for Quantum Heterointegration of Group IV Semiconductors (2013)
  • Author(s): M.Sakuraba and J.Murota
  • Organizer: 6th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
  • Place of Presentation: Tohoku Univ., Sendai, Japan (Abs.No.D-3)
  • Invited
• [Presentation] Tunneling Characteristics in Si_<1-x>Ge_x/Si Resonant Tunneling Diode (2013)
  • Author(s): T.Kawashima, M.Sakuraba and J.Murota
  • Organizer: 6th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
  • Place of Presentation: Tohoku Univ., Sendai, Japan (Abs.No.P-15)
• [Presentation] Epitaxial Growth of B-Doped Si on Si(100) by ECR Ar Plasma CVD from SiH_4-B_2H_6-H_2 Gas Mixture without Substrate Heating (2013)
  • Author(s): Y.Abe, M.Sakuraba and J.Murota
  • Organizer: 6th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
  • Place of Presentation: Tohoku Univ., Sendai, Japan (Abs.No.P-16)
• [Presentation] Epitaxial Growth of Si_<1-x>Ge_x on Si(100) by ECR Ar Plasma CVD from SiH_4-GeH_4 Gas Mixture without Substrate Heating (2013)
  • Author(s): N.Ueno, M.Sakuraba, J.Murota and S.Sato
  • Organizer: 6th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
  • Place of Presentation: Tohoku Univ., Sendai, Japan (Abs.No.P-17)
• [Presentation] Epitaxial Growth of B-Doped Ge on Si(100) by ECR Ar Plasma CVD from GeH_4-B_2H_6-H_2 Gas Mixture without Substrate Heating (2013)
  • Author(s): S.Kubota, M.Sakuraba, J.Murota and S.Sato
  • Organizer: 6th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
  • Place of Presentation: Tohoku Univ., Sendai, Japan (Abs.No.P-18)
• [Presentation] Epitaxial Growth of B-Doped Si on Si(100) by ECR Ar Plasma CVD in a SiH4-B2H6-H2 Gas Mixture without Substrate Heating (2013)
  • Author(s): Y. Abe, M. Sakuraba and J. Murota
  • Organizer: Abs. 8th Int. Conf. on Si Epitaxy and Heterostructures (ICSI-8) & 6th Int. Symp. Control of Semiconductor Interfaces (ISCSI-VI), Abs.No.P1-4.
  • Place of Presentation: Fukuoka, Japan
• [Presentation] Epitaxial Growth of Si1-xGex Alloy on Si(100) by ECR Ar Plasma CVD in a SiH4-GeH4 Gas Mixture without Substrate Heating (2013)
  • Author(s): N. Ueno, M. Sakuraba, J. Murota and S. Sato
  • Organizer: Abs. 8th Int. Conf. on Si Epitaxy and Heterostructures (ICSI-8) & 6th Int. Symp. Control of Semiconductor Interfaces (ISCSI-VI), Abs.No.P1-8.
  • Place of Presentation: Fukuoka, Japan
• [Presentation] Nitrogen Doping Effect upon Hole Tunneling Characteristics of Si Barriers in Si1-xGex/Si Resonant Tunneling Diode (2013)
  • Author(s): T. Kawashima, M. Sakuraba and J. Murota
  • Organizer: Abs. 8th Int. Conf. on Si Epitaxy and Heterostructures (ICSI-8) & 6th Int. Symp. Control of Semiconductor Interfaces (ISCSI-VI), Abs.No.P1-27.
  • Place of Presentation: Fukuoka, Japan
• [Presentation] Group-IV Semiconductor Quantum Heterointegration by Low-Energy Plasma CVD Processing (Invited Paper) (2013)
  • Author(s): M. Sakuraba and J. Murota
  • Organizer: Symp. E12: ULSI Process Integration 8 (ECS Trans., Vol.58, No.9, 2013), pp.195-200, Abs.No.2226.
  • Place of Presentation: San Francisco, USA
  • Invited
• [Presentation] Formation and Characterization of Strained Si1-xGex Films Epitaxially Grown on Si(100) by Low-Energy ECR Ar plasma CVD without Substrate Heating (2013)
  • Author(s): N. Ueno, M. Sakuraba, J. Murota and S. Sato
  • Organizer: Symp. E12: ULSI Process Integration 8 (ECS Trans., Vol.58, No.9, 2013), pp.207-211, Abs.No.2228.
  • Place of Presentation: San Francisco, USA
• [Presentation] Epitaxial Growth of Heavily B-Doped Si and Ge Films on Si(100) by Low-Energy ECR Ar Plasma CVD without Substrate Heating (2013)
  • Author(s): Y. Abe, S. Kubota, M. Sakuraba, J. Murota and S. Sato
  • Organizer: Symp. E12: ULSI Process Integration 8 (ECS Trans., Vol.58, No.9, 2013), pp.223-228, Abs.No.2230.
  • Place of Presentation: San Francisco, USA
• [Presentation] Epitaxial Growth of B-Doped Si on Si(100) by ECR Ar Plasma CVD from SiH4-B2H6-H2 Gas Mixture without Substrate Heating (2013)
  • Author(s): Y. Abe, 他
  • Organizer: 6th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
  • Place of Presentation: Sendai, Japan
• [Presentation] Epitaxial Growth of Si1-xGex on Si(100) by ECR Ar Plasma CVD from SiH4-GeH4 Gas Mixture without Substrate Heating (2013)
  • Author(s): N. Ueno, 他
  • Organizer: 6th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
  • Place of Presentation: Sendai, Japan
• [Presentation] Epitaxial Growth of B-Doped Ge on Si(100) by ECR Ar Plasma CVD from GeH4-B2H6-H2 Gas Mixture without Substrate Heating (2013)
  • Author(s): S. Kubota, 他
  • Organizer: 6th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
  • Place of Presentation: Sendai, Japan
• [Presentation] Atomically Controlled Plasma CVD Processing for Quantum Heterointegration of Group IV Semiconductors (2013)
  • Author(s): M. Sakuraba, 他
  • Organizer: 6th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
  • Place of Presentation: Sendai, Japan
  • Invited
• [Presentation] Epitaxial Growth of B-Doped Si on Si(100) by ECR Ar Plasma CVD in a SiH4-B2H6-H2 Gas Mixture without Substrate Heating (2013)
  • Author(s): Y. Abe, 他
  • Organizer: 8th Int. Conf. on Si Epitaxy and Heterostructures (ICSI-8) and 6th Int. Symp. on Control of Semiconductor Interfaces (ISCSI-VI)
  • Place of Presentation: Fukuoka, Japan
• [Presentation] Epitaxial Growth of Si1-xGex Alloy on Si(100) by ECR Ar Plasma CVD in a SiH4-GeH4 Gas Mixture without Substrate Heating (2013)
  • Author(s): N. Ueno, 他
  • Organizer: 8th Int. Conf. on Si Epitaxy and Heterostructures (ICSI-8) and 6th Int. Symp. on Control of Semiconductor Interfaces (ISCSI-VI)
  • Place of Presentation: Fukuoka, Japan
• [Presentation] Nitrogen Doping Effect upon Hole Tunneling Characteristics of Si Barriers in Si1-xGex/Si Resonant Tunneling Diode (2013)
  • Author(s): T. Kawashima, 他
  • Organizer: 8th Int. Conf. on Si Epitaxy and Heterostructures (ICSI-8) and 6th Int. Symp. on Control of Semiconductor Interfaces (ISCSI-VI)
  • Place of Presentation: Fukuoka, Japan
• [Presentation] Fabrication of Room-Temperature Resonant Tunneling Diode with Atomically Controlled Strained Si_<1-x>Ge_x/Si Quantum Heterostructure (2011)
  • Author(s): M.Sakuraba and J.Murota
  • Organizer: 4th French Research Organizations - Tohoku University Joint Workshop on Frontier Materials (Frontier 2011)
  • Place of Presentation: Sendai, Japan (p.35)
  • Invited
• [Presentation] Atomically Controlled Formation of Strained Si_<1-x>Ge_x/Si Quantum Heterostructure for Room- Temperature Resonant Tunneling Diode (2011)
  • Author(s): M.Sakuraba and J.Murota
  • Organizer: Symp. E9: ULSI Process Integration 7
  • Place of Presentation: Boston, USA (Abs. 220th Electrochem. Soc. Meeting, Abs.No.2147)
• [Presentation] Atomically Controlled Plasma Processing for Quantum Heterointegration of Group IV Semiconductors (2011)
  • Author(s): M.Sakuraba and J.Murota
  • Organizer: Symp. E9: ULSI Process Integration 7
  • Place of Presentation: Boston, USA (Abs. 220th Electrochem. Soc. Meeting, Abs.No.2152)
• [Presentation] Behavior of N Atoms after Thermal Nitridation of Si_<1-x>Ge_x Surface (2011)
  • Author(s): T.Kawashima, M.Sakuraba, B.Tillack and J.Murota
  • Organizer: 7th Int. Conf. on Si Epitaxy and Heterostructures (ICSI-7)
  • Place of Presentation: Leuven, Belgium (Abs.No.1171)
• [Presentation] Behavior of N Atoms after Thermal Nitridation of Si_<1-x>Ge_x Surface (2011)
  • Author(s): T.Kawashima, 他
  • Organizer: 7th Int.Conf.on Si Epitaxy and Heterostructures (ICSI-7)
  • Place of Presentation: Leuven, Belgium
• [Presentation] Atomically Controlled Formation of Strained Si_<1-x>Ge_x/Si Quantum Heterostructure for Room-Temperature Resonant Tunneling Diode (2011)
  • Author(s): M.Sakuraba, J.Murota
  • Organizer: Symp.E9 : ULSI Process Integration 7 (220th Meeting of the Electrochem.Soc.)
  • Place of Presentation: Boston, USA
• [Presentation] Atomically Controlled Plasma Processing for Quantum Heterointegration of Group IV Semiconductors (2011)
  • Author(s): M.Sakuraba, J.Murota
  • Organizer: Symp.E9 : ULSI Process Integration 7 (220th Meeting of the Electrochem.Soc.)
  • Place of Presentation: Boston, USA
• [Presentation] Fabrication of Room-Temperature Resonant Tunneling Diode with Atomically Controlled Strained Si_<1-x>Ge_x/Si Quantum Heterostructure (2011)
  • Author(s): M.Sakuraba, J.Murota
  • Organizer: 4th French Research Organizations-Tohoku University Joint Workshop on Frontier Materials (Frontier 2011)
  • Place of Presentation: Sendai, Japan(Invited Paper)