Process development for high-performance highly-strained quantum-heterostructure resonant-tunneling devices of group-IV semiconductors
Project/Area Number |
23360003
|
Research Category |
Grant-in-Aid for Scientific Research (B)
|
Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Applied materials science/Crystal engineering
|
Research Institution | Tohoku University |
Principal Investigator |
SAKURABA Masao 東北大学, 電気通信研究所, 准教授 (30271993)
|
Co-Investigator(Kenkyū-buntansha) |
MUROTA Junichi 東北大学, 電気通信研究所, 教授 (70182144)
|
Project Period (FY) |
2011-04-01 – 2014-03-31
|
Project Status |
Completed (Fiscal Year 2013)
|
Budget Amount *help |
¥20,410,000 (Direct Cost: ¥15,700,000、Indirect Cost: ¥4,710,000)
Fiscal Year 2013: ¥7,020,000 (Direct Cost: ¥5,400,000、Indirect Cost: ¥1,620,000)
Fiscal Year 2012: ¥7,410,000 (Direct Cost: ¥5,700,000、Indirect Cost: ¥1,710,000)
Fiscal Year 2011: ¥5,980,000 (Direct Cost: ¥4,600,000、Indirect Cost: ¥1,380,000)
|
Keywords | エピタキシャル成長 / プラズマ / 化学気相成長 / IV族半導体 / Si / Ge / SiGe混晶 / ドーピング / ヘテロ構造 / 量子デバイス / 室温動作 |
Research Abstract |
By using elctron-cyclotron-resonance plasma chemical vapor deposition, epitaxial growth of highly-strained SiGe alloy and Ge films on Si(100) with smooth surface and heavy B doping into Si and Ge epitaxial films can be realized. Nitrogen atomic-layer doping process and its effects upon hole tunneling characteristics of Si barriers in the strained SiGe/Si(100) hole resonant tunneling diode were also investigated.
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Report
(4 results)
Research Products
(43 results)