Structures and band gaps of similar silicon oxide monolayers formed on a metal and a semiconductor

• Project/Area Number: 23540372
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Condensed matter physics I
• Research Institution: Fukuoka University (2013-2014); Kyushu University (2011-2012)
• Principal Investigator: TOCHIHARA Hiroshi 福岡大学, 工学部, 研究員 (80080472)
• Co-Investigator(Kenkyū-buntansha): SHIRASAWA Tetsuroh 東京大学, 物性研究所, 助教 (80451889) ; MIZUNO Seigi 九州大学, 総合理工学研究院, 教授 (60229705) ; KOMORI Fumio 東京大学, 物性研究所, 教授 (60170388) ; SUZUKI Takayuki 福岡大学, 工学部, 教授 (10580178)
• Project Period (FY): 2011-04-28 – 2015-03-31
• Project Status: Completed (Fiscal Year 2014)
• Budget Amount: ¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000); Fiscal Year 2013: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000); Fiscal Year 2012: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000); Fiscal Year 2011: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
• Keywords: シリコン酸化物 / 超薄膜 / シリコンカーバイド / エピタキシャル単分子層 / 走査トンネル顕微鏡 / バンドギャップ / 酸化シリコン超薄膜 / エピタキシー / 半導体／絶縁体接合 / エピタキシャル超薄膜 / MOS構造 / 結晶性超薄膜 / エピタキシャル成長膜 / 金属／絶縁物接合 / 半導体／絶縁物接合 / 表面新物質

Outline of Final Research Achievements

The purpose of the present study is the comparison of the structure and band gap between similar epitaxial crystalline silicon oxide monolayers formed on SiC and Mo. First, their surfaces were observed by scanning tunneling microscopy (STM), but it was found that many nano-sized particles of SiO2 cover the silicon oxide monolayers entirely both the surfaces. We failed to remove the nano-particles from the Mo surface. However, the nano-particles formed on the SiC surface can be removed by heating the substrate at an adequate temperature. Clear atomic images of the silicon oxide monolayer can be observed on the SiC surface, and they support the previously proposed structure. The band gap of the silicon oxide monolayer could be determined by measuring point tunneling spectroscopy to be 5.5±0.5 eV, which is much smaller than that of bulk SiO2, 8.9 eV.

Research Products

• [Journal Article] Adsorption of PTCDA on Si(001)-2 x 1 surface (2015)
  • Author(s): T. Suzuki, Y. Yoshimoto, K. Yagyu, H. Tochihara
  • Journal Title: J. Chem. Phys. Volume: 142 Issue: 10
  • DOI: 10.1063/1.4906118
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Anomalous structural evolution and √3x√3 reconstruction of a clean Si(111) surface observed after thermal desorption of thallium (2015)
  • Author(s): P. Kocan, O. Krejci, H. Tochihara
  • Journal Title: J. Vac. Sci. Technol. A Volume: 33 Issue: 2
  • DOI: 10.1116/1.4913199
  • Peer Reviewed
• [Journal Article] Scanning tunneling microscopic and spectroscopic studies on a crystalline silica monolayer epitaxially formed on hexagonal SiC(000-1 ) surfaces (2014)
  • Author(s): Hiroshi Tochihara, Tetsuroh Shirasawa, Takayuki Suzuki, Toshio Miyamachi, Takashi Kajiwara, Kazuma Yagyu, Shunsuke Yoshizawa, Toshio Takahashi, Satoru Tanaka, and Fumio Komori
  • Journal Title: Applied Physics Letters Volume: 104
  • Peer Reviewed
• [Journal Article] Fabrication of a single layer grapheme by copper intercalation on a SiC(0001) surface (2014)
  • Author(s): Kazuma Yagyu, Takayuki Tajiri, Atsushi Kohno, Kazutoshi Takahashi, Hiroshi Tochihara, Hajime Tomokage, Takayuki Suzuki
  • Journal Title: Applied Physics Letters Volume: 104
  • Peer Reviewed
• [Journal Article] Growth mode and atomic structure of MnSi thin films on Si(111) (2012)
  • Author(s): B. Geisler, P. Kratzer, T. Suzuki, T. Lutz, G. Costantini, K. Kern
  • Journal Title: Physical Review B Volume: 86 Issue: 11
  • DOI: 10.1103/physrevb.86.115428
  • Peer Reviewed
• [Journal Article] Uniaxial deformation of graphene Dirac cone on a vicinal SiC substrate (2012)
  • Author(s): K. Nakatsuji
  • Journal Title: Phys. Rev. B Volume: 85 Issue: 19
  • DOI: 10.1103/physrevb.85.195416
  • Peer Reviewed
• [Journal Article] Si 2p Core Level Shifts of the Epitaxial SiON Layer on a SiC(0001), Studied by Photoemissin Spectroscopy (2011)
  • Author(s): T. Shirasawa, S. Tanaka, T. Muro, Y. Tamenori, Y. Harada, T. Tokushima, T. Kinoshita, S. Shin, T. Takahashi, H. Tochihara
  • Journal Title: Materials Science Forum Volume: 675-677 Pages: 15-19
  • Peer Reviewed
• [Journal Article] Surface structure determination of silica single layer on Mo(112) by LEED (2011)
  • Author(s): T. Kinoshita, S. Mizuno
  • Journal Title: Surface Science Volume: 605 Pages: 1209-1213
  • Peer Reviewed
• [Journal Article] The epitaxial crystalline silicon-oxynitride layer on SiC(0001): Formation of an ideal insulator-SiC interface (2011)
  • Author(s): H. Tochihara, T. Shirasawa
  • Journal Title: Progress in Surface Science Volume: 86 Issue: 11-12 Pages: 295-327
  • DOI: 10.1016/j.progsurf.2011.08.003
  • Peer Reviewed
• [Presentation] Ultrathin Crystalline Silica Films Formed Epitaxially on SiC Basal Planes (2014)
  • Author(s): H. Tochihara, T. Suzuki, K. Yagyu, T. Shirasawa, T. Kajiwara, T. Miyamachi, T. Takahashi, F. Komori, S. Tanaka
  • Organizer: The 9th International Forum on Advanced Materials Science and Technology
  • Place of Presentation: Xiamen University, Xiamen, China
  • Year and Date: 2014-11-30 – 2014-12-03
  • Invited
• [Presentation] Si(111)清浄表面の新再構成構造 (2014)
  • Author(s): P. Kocan, O. Krejci, 栃原浩
  • Organizer: 日本物理学会２０１４年秋期大会
  • Place of Presentation: 中部大学 春日井市
  • Year and Date: 2014-09-07 – 2014-09-10
• [Presentation] Scanning Tunneling Microscopy Studies of Epitaxial Silica Monolayers on C- and Si-Faces of Hexagonal SiC Basal Planes (2014)
  • Author(s): H. Tochihara, T. Suzuki, K. Yagyu, T. Shirasawa, T. Kajiwara, T. Miyamachi, T. Takahashi, F. Komori, S. Tanaka
  • Organizer: IUMRS-ICA2014
  • Place of Presentation: Fukuoka University, Fukuoka, Japan
  • Year and Date: 2014-08-24 – 2014-08-30
• [Presentation] A dangling-bond free interface: the silicon-oxynitride epitaxial ultrathin film on SiC(0001). (2011)
  • Author(s): H. Tochihara, T. Shirasawa
  • Organizer: The 13th International Conference on the Formation of Semiconductor Interfaces(招待講演)
  • Place of Presentation: Prague, Czech Republic
• [Presentation] STM Studies of an Ultrathin Silica Film Epitaxially Formed on the C-Face of 4H-SiC Basal Planes
  • Author(s): Hiroshi Tochihara, Tetsuroh Shirasawa, Takayuki Suzuki, Toshio Miyamachi, Takashi Kajiwara, Kazuma Yagyu, Shunsuke Yoshizawa, Toshio Takahashi, Satoru Tanaka, Fumio Komori, Peter Krueger, Johannes Pollmann
  • Organizer: 12th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures
  • Place of Presentation: Epochal Tsukuba
• [Presentation] SiC上の結晶性シリカシートのSTM観察とそのバンドギャップ
  • Author(s): 栃原浩、白澤徹郎、鈴木孝将、宮町俊生、梶原隆司、柳生数馬、吉澤俊介、高橋敏男、田中悟、小森文夫、Peter Krueger, Jahannes Pollmann
  • Organizer: 日本物理学会第69回年次大会
  • Place of Presentation: 東海大学、平塚市