Microwave Modeling of Single Electron Transistor
| Project/Area Number |
23560389
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | The University of Electro-Communications |
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Principal Investigator |
HONJO Kazuhiko 電気通信大学, 情報理工学(系)研究科, 教授 (90334573)
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| Co-Investigator(Kenkyū-buntansha) |
ISHIKAWA Ryo 電気通信大学, 情報理工学研究科, 助教 (30333892)
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| Project Period (FY) |
2011 – 2013
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2013: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2012: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2011: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
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| Keywords | ナノ電子デバイス / マイクロ波 / 電力利得 / 単電子トランジスタ / テラヘルツ / ＨＥＭＴ / ＨＢＴ / HEMT / HBT / T-CAD / トランスファーレジスタ |
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| Research Abstract |
A novel approach for investigating the single-electron transistors (SETs) power gain functionality which is one of the most important features of active devices related with operation speed performance is proposed. Moreover, an evaluating method is also introduced to improve the SET power gain due to the influence of junction thickness. It is found that source junction thickness is the key factor affecting the power gain. This important finding is illustrated by taking into account the physical parameters of sample fabricated SET. According to proposed model, power gain can be improved by ramarkable amount of 39dB at frequencies up to THz regime by reducing 1.25nm in source junction thickness.
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Report
(4 results)
Research Products
(28 results)
