| Budget Amount *help |
¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2014: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2013: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2012: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2011: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
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| Outline of Final Research Achievements |
We have developed a quantum Wigner Monte Carlo simulator and an atomistic ballistic simulator, in order to predict the device performance of emerging MOSFETs with new channel materials and new device structures. For III-V MOSFETs, the increase of a leakage current due to source-drain direct tunneling and degradation of the current drive due to a small DOS should be eliminated to outperform conventional Si MOSFETs. Among graphene nanoribbon, bilayer graphene, and graphene nanomesh structures, the graphene nanoribbon structure exhibited the best device performance as a FET channel. A junctionless transistor was shown to be a potential candidate for an ultrascaled integrated device, because a roughness scattering at the channel-gate oxide interface can be reduced.
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