Research on green nanodevices toward the realization of ultra-low power LSI
| Project/Area Number |
23560395
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Kobe University |
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Principal Investigator |
TSUCHIYA Hideaki 神戸大学, 工学(系)研究科(研究院), 准教授 (80252790)
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| Project Period (FY) |
2011-04-28 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2014: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2013: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2012: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2011: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
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| Keywords | 高移動度材料 / グラフェンFET / ナノワイヤFET / ジャンクションレストランジスタ / モンテカルロシミュレーション / 原子論 / 量子力学的効果 / バリスティック輸送 / 低電圧駆動 / III-V MOSFET / グラフェン / ナノワイヤ / III-V MOS / ウィグナーモンテカルロ法 / ジャンクションレス・トランジスタ / シリセン / ゲルマネン / ナノデバイスシミュレーション / グリーンナノデバイス / 低消費電力 / グラフェンナノ材料 / ウィグナー・モンテカルロシミュレーション |
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| Outline of Final Research Achievements |
We have developed a quantum Wigner Monte Carlo simulator and an atomistic ballistic simulator, in order to predict the device performance of emerging MOSFETs with new channel materials and new device structures. For III-V MOSFETs, the increase of a leakage current due to source-drain direct tunneling and degradation of the current drive due to a small DOS should be eliminated to outperform conventional Si MOSFETs. Among graphene nanoribbon, bilayer graphene, and graphene nanomesh structures, the graphene nanoribbon structure exhibited the best device performance as a FET channel. A junctionless transistor was shown to be a potential candidate for an ultrascaled integrated device, because a roughness scattering at the channel-gate oxide interface can be reduced.
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Report
(5 results)
Research Products
(61 results)
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[Book] 量子物理2012
Author(s)
鎌倉良成，宇野重康，伊藤博介，土屋英昭，尾崎俊二
Total Pages
232
Publisher
オーム社
Related Report
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