| Project/Area Number |
23560422
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Osaka Institute of Technology |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
SASA Shigehiko 大阪工業大学, 工学部, 教授 (50278561)
INOUE Masataka 大阪工業大学, 工学部, 教授 (20029325)
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| Project Period (FY) |
2011 – 2013
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2013: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2012: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2011: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
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| Keywords | 化合物半導体 / MOSFET / 半導体ヘテロ構造 / トランジスタ / インジウムヒ素 / 高誘電率ゲート / 高速・低消費電力素子 / InAs / ヘテロ接合トランジスタ / III-V MOSFET / High-kゲート / セルフスイッチングダイオード / 高速・低消費電力 / InAsヘテロ構造 / High-kゲート絶縁膜 |
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| Research Abstract |
Growth of InAs/AlGaSb heterostructures by molecular beam epitaxy and the characterization of antimonide-based composite-channel InAs MOSFETs are reported. Antimonide-based compound semiconductors such as those of InAs combined with AlGaSb are candidates for high-speed and low-power digital applications. InAs/AlGaSb MOSFETs utilizing high-k (HfO2) gate insulator were fabricated using a Ni/Au ohmic metallization. Low contact resistance using Ni/Au ohmic metal and annealing in N2 for 60 seconds. The transconductance gm of 414 mS/mm was obtained for the MOSFET with gate length of 1um.
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