Fabrication of new structure transistors using III-V Semiconductors/High-k materials on Si substrates

• Project/Area Number: 23560422
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: Osaka Institute of Technology
• Principal Investigator: MAEMOTO TOSHIHIKO 大阪工業大学, 工学部, 准教授 (80280072)
• Co-Investigator(Kenkyū-buntansha): SASA Shigehiko 大阪工業大学, 工学部, 教授 (50278561) ; INOUE Masataka 大阪工業大学, 工学部, 教授 (20029325)
• Project Period (FY): 2011 – 2013
• Project Status: Completed (Fiscal Year 2013)
• Budget Amount: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000); Fiscal Year 2013: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000); Fiscal Year 2012: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000); Fiscal Year 2011: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
• Keywords: 化合物半導体 / MOSFET / 半導体ヘテロ構造 / トランジスタ / インジウムヒ素 / 高誘電率ゲート / 高速・低消費電力素子 / InAs / ヘテロ接合トランジスタ / III-V MOSFET / High-kゲート / セルフスイッチングダイオード / 高速・低消費電力 / InAsヘテロ構造 / High-kゲート絶縁膜

Research Abstract

Growth of InAs/AlGaSb heterostructures by molecular beam epitaxy and the characterization of antimonide-based composite-channel InAs MOSFETs are reported. Antimonide-based compound semiconductors such as those of InAs combined with AlGaSb are candidates for high-speed and low-power digital applications. InAs/AlGaSb MOSFETs utilizing high-k (HfO2) gate insulator were fabricated using a Ni/Au ohmic metallization. Low contact resistance using Ni/Au ohmic metal and annealing in N2 for 60 seconds. The transconductance gm of 414 mS/mm was obtained for the MOSFET with gate length of 1um.

Research Products

• [Journal Article] 高性能酸化亜鉛系FETと酸化物デバイス応用の広がり (2012)
  • Author(s): 佐々誠彦, 矢野満明, 前元利彦, 小池一歩, 尾形健一
  • Journal Title: 電子情報通信学会誌 Volume: 95巻4号 Pages: 289-293
  • NAID: 110009437460
  • Peer Reviewed
• [Journal Article] 室温プロセスによるフレキシブル基板上酸化亜鉛薄膜トランジスタの作製 (2012)
  • Author(s): 木村祐太, 日垣友宏, 前元利彦, 佐々誠彦
  • Journal Title: 材料 Volume: 61巻9号 Pages: 760-765
  • NAID: 130002084924
  • Peer Reviewed
• [Journal Article] A reflection layer for enhanced THz radiation from InAs thin films (2012)
  • Author(s): K. Nishisaka, T. Maemoto, S. Sasa, K. Takayama, M. Tonouchi
  • Journal Title: Proceedings of the 2012 International Meeting for Future of Electron Devices, Kansai Volume: 1巻 Pages: 116-117
• [Journal Article] Rectification effects in ZnO-based transparent self-switching nano -diodes (2012)
  • Author(s): Y. Kimura, T. Kiso, T. Higaki, Y. Sun, T. Maemoto, S. Sasa, M. Inoue
  • Journal Title: Proceedings of the 2012 International Meeting for Future of Electron Devices Kansai Volume: 1巻 Pages: 114-115
• [Journal Article] Rectification effects in ZnO-based transparent self-switching nano-diodes (2012)
  • Author(s): Y. Kimura, T. Kiso, T. Higaki, Y. Sun, T. Maemoto, S. Sasa, and M. Inoue
  • Journal Title: Proceedings of the 2012 International Meeting for Future of Electron Devices Volume: 1 Pages: 114-115
  • Peer Reviewed
• [Journal Article] A reflection layer for enhanced THz radiation from InAs thin films (2012)
  • Author(s): K. Nishisaka, T. Maemoto, S. Sasa, K. Takayama, and M. Tonouchi
  • Journal Title: Proceedings of the 2012 International Meeting for Future of Electron Devices Volume: 1 Pages: 116-117
  • Peer Reviewed
• [Journal Article] 室温プロセスによるフレキシブル基板上酸化亜鉛薄膜トランジスタの作製 (2012)
  • Author(s): 木村祐太，日垣友宏，前元利彦，佐々誠彦
  • Journal Title: 材料 Volume: 61-9 Pages: 760-765
  • NAID: 130002084924
  • Peer Reviewed
• [Journal Article] 高性能酸化亜鉛系FETと酸化物デバイス応用の広がり (2012)
  • Author(s): 佐々誠彦，矢野満明，前元利彦，小池一歩，尾形健一
  • Journal Title: 電子情報通信学会誌 Volume: 95-4 Pages: 289-293
  • NAID: 110009437460
  • Peer Reviewed
• [Journal Article] Fabrication and Characterization of Antimonide-Based Composite-Channel InAs/AlGaSb HFETs using High-k Gate Insulator (2011)
  • Author(s): T. Kiso, H.Yoshikawa, Y. Ishibashi, K. Nishisaka, K. Ogata, T. Maemoto, S. Sasa, M. Inoue
  • Journal Title: Proceedings of the 2011 International Meeting for Future of Electron Devices, Kansai Volume: 1巻 Pages: 88-89
• [Journal Article] Fabrication and Characterization of Antimonide-Based Composite-Channel InAs/AlGaSb HFETs using High-k Gate Insulators (2011)
  • Author(s): T. Kiso, H. Yoshikawa, Y. Ishibashi, K. Nishisaka, K. Ogata, T. Maemoto, S. Sasa, M. Inoue
  • Journal Title: Proceedings of the 2011 International Meeting for Future of Electron Devices Volume: 1 Pages: 88-89
• [Presentation] 高誘電率ゲート材料を用いたInAs/AlGaSbヘテロ構造トランジスタの作製と半導体/ゲート界面の改善 (2013)
  • Author(s): 森口航平, 前元利彦, 尾形健一, 佐々誠彦
  • Organizer: 平成25年電気関係学会関西連合大会
  • Place of Presentation: 大阪府寝屋川市
  • Year and Date: 2013-11-16
• [Presentation] Pulsed laser deposition of low resistivity transparent conducting Al-doped ZnO films at room temperature and its transparent thin-film transistor applications (2013)
  • Author(s): Y. Sun, Y. Kimura, T. Maemoto, S. Sasa
  • Organizer: 12^<th> International Conference on Laser Ablation
  • Place of Presentation: Ischia, Italy
  • Year and Date: 2013-10-08
• [Presentation] Crystal growth of InAs/AlGaSb heterostructures by molecular beam epitaxy and fabrication of InAs HFETs using Ni/Au alloy ohmic metal (2013)
  • Author(s): K. Moriguchi, T.Maemoto, K. Ogata, S.Sasa
  • Organizer: 2013 International Conference on Solid State Devices and Materials
  • Place of Presentation: Fukuoka, Japan
  • Year and Date: 2013-09-26
• [Presentation] Rectification effects in ZnO-based self-switching nanodiodes toward transparent flexible electronics (2013)
  • Author(s): T. Maemoto, Y. Kimura, Y.Sun, S., S. Sasa
  • Organizer: 18^<th> International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures
  • Place of Presentation: Matsue, Shimane, Japan
  • Year and Date: 2013-07-22
• [Presentation] InAs/AlGaSbヘテロ構造の分子線エピタキシャル成長と高誘電率ゲート材料を用いたHFETの製作 (2013)
  • Author(s): 森口航平, 西坂和一, 前元利彦, 尾形健一, 佐々誠彦
  • Organizer: 2013年春期第60回応用物理学会学術講演会
  • Place of Presentation: 神奈川県厚木市
  • Year and Date: 2013-03-29
• [Presentation] InAs/AlGaSbヘテロ構造の分子線エピタキシャル成長と高誘電率ゲート材料を用いたHFETの製作 (2013)
  • Author(s): 森口航平，西坂和一，前元利彦，尾形健一，佐々誠彦
  • Organizer: 2013年春季第60回応用物理学会学術講演会
  • Place of Presentation: 神奈川工科大学，神奈川
• [Presentation] 分子線エピタキシー法によるInAs/AlGaSbヘテロ構造の結晶成長と高誘電率ゲート材料を用いた電界効果トランジスタの作製 (2012)
  • Author(s): 森口航平, 西坂和一, 前元利彦, 佐々誠彦, 井上正崇
  • Organizer: 平成24年電気関係学会関西連合大会
  • Place of Presentation: 大阪府吹田市
  • Year and Date: 2012-11-09
• [Presentation] Rectification Effects of ZnO-based Transparent Nano-diodes on Glass and Flexible Plastic Substrates (2012)
  • Author(s): Y. Kimura, Y. Sun, T. Maemoto, S. Sasa, S. Kasai, M. Inoue
  • Organizer: 25^<th> International Microprocess and Nanotechnology Conference
  • Place of Presentation: Kobe, Hyogo, Japan
  • Year and Date: 2012-10-31
• [Presentation] A reflection layer for enhanced THz radiation from InAs thin films (2012)
  • Author(s): K. Nishisaka, T. Maemoto, S. Sasa, K. Takayama, M. Tonouchi
  • Organizer: 2012 International Meeting for Future of Electron Devices, Kansai
  • Place of Presentation: Suita, Osaka, Japan
  • Year and Date: 2012-05-10
• [Presentation] Rectification effects in ZnO-based transparent self-switching nano-diodes (2012)
  • Author(s): Y. Kimura, T. Kiso, T. Higaki, Y. Sun, T. Maemoto, S. Sasa, M. Inoue
  • Organizer: 2012 International Meeting for Future of Electron Devices, Kansai
  • Place of Presentation: Suita, Osaka, Japan
  • Year and Date: 2012-05-10
• [Presentation] Electron transport properties in self switching nano-diodes (2012)
  • Author(s): T. Kiso, K. Nishisaka, T. Maemoto, S. Sasa, S. Kasai, M. Inoue
  • Organizer: APS March meeting 2012
  • Place of Presentation: Boston, Massachusetts, USA
  • Year and Date: 2012-02-29
• [Presentation] Rectification effects in ZnO-based transparent self-switching nano-diodes (2012)
  • Author(s): Y. Kimura, T. Kiso, T. Higaki, Y. Sun, T. Maemoto, S. Sasa, and M. Inoue
  • Organizer: 2012 Int. Mtg. for Future of Electron Devices, Kansai (IMFEDK)
  • Place of Presentation: Kansai University Centenary Memorial Hall, Osaka, Japan
• [Presentation] A reflection layer for enhanced THz radiation from InAs thin films (2012)
  • Author(s): K. Nishisaka, T. Maemoto, S. Sasa, K. Takayama, and M. Tonouchi
  • Organizer: 2012 Int. Mtg. for Future of Electron Devices, Kansai (IMFEDK)
  • Place of Presentation: Kansai University Centenary Memorial Hall, Osaka, Japan
• [Presentation] Rectification Effects of ZnO-based Transparent Nano-diodes on Glass and Flexible Plastic Substrates (2012)
  • Author(s): Y. Kimura, Y. Sun, T. Maemoto, S. Sasa , S. Kasai and M. Inoue
  • Organizer: 25th International Microprocesses and Nanotechnology Conference
  • Place of Presentation: Kobe Meriken Park Oriental Hotel, Kobe, Japan
• [Presentation] 分子線エピタキシー法によるInAs/AlGaSbヘテロ構造の結晶成長と高誘電率ゲート材料を用いた電界効果トランジスタの作製 (2012)
  • Author(s): 森口航平，西坂和一，前元利彦，佐々誠彦，井上正崇
  • Organizer: 平成24年電気関係学会関西連合大会
  • Place of Presentation: 関西大学100周年記念会館，大阪
• [Presentation] Electron transport properties in self switching nano-diodes (2012)
  • Author(s): T. Kiso, K. Nishisaka, T. Maemoto, S. Sasa, S. Kasai, M. Inoue
  • Organizer: APS March Meeting 2012
  • Place of Presentation: ボストンコンベンションセンター（アメリカ）
• [Presentation] Fabrication and transport properties in InAs-based self switching nano-diodes (2011)
  • Author(s): T. Kiso, K. Nishisaka, T. Maemoto, S. Sasa, S. Kasai, M. Inoue
  • Organizer: 24^<th> Int. Microprocesses and Nanotechnology Conference
  • Place of Presentation: Kyoto, Japan
  • Year and Date: 2011-10-26
• [Presentation] Fabrication and Characterization of Antimonide-Based Composite-Channel InAs/AlGaSb HFETs using High-k Gate Insulator (2011)
  • Author(s): T. Kiso, H.Yoshikawa, Y. Ishibashi, K. Nishisaka, K. Ogata, T. Maemoto, S. Sasa, M. Inoue
  • Organizer: 2011 International Meeting for Future of Electron Devices, Kansai
  • Place of Presentation: Suita, Osaka, Japan
  • Year and Date: 2011-05-19
• [Presentation] Fabrication and Characterization of Antimonide-Based Composite-Channel InAs/AlGaSb HFETs using High-k Gate Insulators (2011)
  • Author(s): T. Kiso, H. Yoshikawa, Y. Ishibashi, K. Nishisaka, K. Ogata, T. Maemoto, S. Sasa, M. Inoue
  • Organizer: Proceedings of the 2011 International Meeting for Future of Electron Devices
  • Place of Presentation: 関西大学（大阪府）
• [Presentation] Fabrication and transport properties in InAs-based self switching nano-diodes (2011)
  • Author(s): T. Kiso, K. Nishisaka, T. Maemoto, S. Sasa, S. Kasai, M. Inoue
  • Organizer: 24th Int. Microprocesses and Nanotechnology Conference
  • Place of Presentation: ANAホテル京都（京都府）
• [Presentation] Rectification effects in ZnO-based self-switching nanodiodes toward transparent flexible electronics
  • Author(s): T. Maemoto, Y. Kimura, Y. Sun, S. Kasai, and S. Sasa
  • Organizer: 18th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures
  • Place of Presentation: Shimane Prefectural Convention Center "Kunibiki Messe", Matsue, Japan
• [Presentation] Crystal growth of InAs/AlGaSb heterostructures by molecular beam epitaxy and fabrication of InAs HFETs using Ni/Au alloy ohmic metal
  • Author(s): K. Moriguchi, T. Maemoto, K. Ogata and S. Sasa
  • Organizer: 2013 International Conference on Solid State Devices and Materials
  • Place of Presentation: Hilton Fukuoka Sea Hawk, Fukuoka, Japan
• [Presentation] Pulsed laser deposition of low resistivity transparent conducting Al-doped ZnO films at room temperature and its transparent thin-film transistor applications
  • Author(s): Y. Sun, Y. Kimura, T. Maemoto and S. Sasa
  • Organizer: 12th International Conference on Laser Ablation
  • Place of Presentation: Hotel Continental, Ischia, Italy
• [Presentation] 高誘電率ゲート材料を用いたInAs/AlGaSbヘテロ構造トランジスタの作製と半導体/ゲート界面の改善
  • Author(s): 森口航平，前元利彦，尾形健一，佐々誠彦
  • Organizer: 平成25年電気関係学会関西連合大会
  • Place of Presentation: 大阪電気通信大学寝屋川キャンパス，大阪府寝屋川市
• [Remarks] 大阪工業大学 工学部 電気電子システム工学科 半導体エレクトロニクス研究系
  • URL: http://www.oit.ac.jp/www-ee/server/semicon/index.shtml
• [Remarks] 大阪工業大学ナノ材料マイクロデバイス研究センター
  • URL: http://www.oit.ac.jp/japanese/nanotech/