Subsurface damage recovery of single crystal silicon by ultra-short high-output flash lamp irradiation
| Project/Area Number |
23656094
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Production engineering/Processing studies
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| Research Institution | Keio University (2012)
Tohoku University (2011) |
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Principal Investigator |
YAN Jiwang 慶應義塾大学, 理工学部, 教授 (40323042)
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| Project Period (FY) |
2011 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
|
| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2012: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2011: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
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| Keywords | 超精密加工 / 加工変質層 / 単結晶シリコン / フラッシュランプ / レーザ / 加工欠陥 |
|---|
| Research Abstract |
Ultra-short pulsed high-output flash lamp irradiation was used torecover subsurface damage of silicon surfaces after mechanical machining. The subsurfacemicrostructural changes due to lamp irradiation were experimentally characterized andthe damage recove
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Report
(3 results)
Research Products
(5 results)
