| Project/Area Number |
23656207
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Tohoku University |
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Principal Investigator |
SAITO Shin 東北大学, 大学院・工学研究科, 准教授 (50344700)
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| Project Period (FY) |
2011 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2012: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2011: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
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| Keywords | 自己組織化 / ドライプロセス / 薄膜 / スパッタリング |
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| Research Abstract |
The material and process technology to stably form periodic structure with the nanometer order is the basic technology for the mass production of the future electronic devices. Therefore in this study, a technique to form the sequence organization mentioned above was investigated only by a sputtering-based dry process. About the cubic and/or tetragonal system materials, both of sheet texture control and formation of large grain microstructure in several hundred nano-meters diameter has been established and succeeded in the periodic initial nucleus sequence formation of the metal nano-islands on the Cu(001)/CuN surface by nitrogen gas adsorption or nitriding process. Furthermore about the hexagonal system materials, c-axis sheet texture control and enlarged grain size process has established.
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