| Project/Area Number |
23656210
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Tokyo University of Agriculture and Technology |
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Principal Investigator |
SUDA Yoshiyuki 東京農工大学, 大学院・工学研究院, 教授 (10226582)
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| Project Period (FY) |
2011 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2012: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2011: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
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| Keywords | 作成 / 評価技術 / Ge / 仮想基板 / エピタキシー / SK成長 / ゲルマニウム / サファクタント / ヘテロ成長 / Ｇｅ成長 / 歪 / 平坦化 / 緩和 / 表面泳動 / 島状成長 / 90度転位 |
|---|
| Research Abstract |
We have systematically analyzed the method of formation of a Ge flat film deposited directly on heavily P-doped Si by our developed sputter epitaxy and have cleared the flat Ge growth mechanisms where the Ge layer is grown flat with generation of 90° dislocations at a Si/Ge interface and a small strain in the film. The dislocations are probably generated due to the short Ge adsorbate migration length and presence of doped P atoms. We have also found a similar Ge growth behavior on a heavily B-doped Si, and our proposed method is expected to be well used as a Ge virtual substrate.
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