Epitaxial precipitation of grapheneby microwave plasma chemical vapor deposition

Research Project

Project/Area Number	23656450
Research Category	Grant-in-Aid for Challenging Exploratory Research
Allocation Type	Multi-year Fund
Research Field	Material processing/treatments
Research Institution	The University of Tokyo
Principal Investigator	MITSUDA Yoshitaka 東京大学, 生産技術研究所, 教授 (20212235)
Project Period (FY)	2011 – 2012
Project Status	Completed (Fiscal Year 2012)
Budget Amount *help	¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000) Fiscal Year 2012: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000) Fiscal Year 2011: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
Keywords	グラフェン / 拡散 / 析出 / マイクロ波CVD / 固相拡散
Research Abstract	It is widely known that graphene, monolayer graphite sheet, has unique physical properties such as extremely high mobility of carriers and quantized transport phenomena. Graphene has been synthesized mainly through a lab-based primitive method, and deposition method on large area is explored. We examined precipitation of graphene from a solid state metal and found thatamorphous graphite was precipitated through crystalline metal thin film.