Research Project
Grant-in-Aid for Young Scientists (B)
Growth conditions appropriate for formation of compressively strained Si/Si1-xCx heterostructure on Si(100) substrate using gas-source molecular beam epitaxy method have been systematically studied. Mechanisms of defect formation and stress relaxation process have been studied, which is essential f or the growth of high quality crystal. P-type MOSFETs with compressively strained Si channel layer were fabricated. Electrical characterization revealed hole mobility improvement in this material system.
All 2013 2012 2011 Other
All Journal Article (5 results) (of which Peer Reviewed: 5 results) Presentation (7 results) Remarks (3 results)
Growth
Volume: 362 Pages: 276-281
Appl. Phys. Lett
Volume: 102 Pages: 11902-11902
Journal of Crystal Growth
10.1016/j.jcrysgro.2011.12.084
Applied Physics Letters
Volume: 102 Issue: 1 Pages: 11902-11902
10.1063/1.4773560
http://www.inorg.yamanashi.ac.jp/ccst/laboratories/nakagawa-lab
http://erdb.yamanashi.ac.jp/rdb/A_DispInfo.Scholar/4_3_20/CDD495F4347CD50D.html