Studies on defect formation process and electrical properties of Silicon-Carbon strained heterostructures

• Project/Area Number: 23760011
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Applied materials science/Crystal engineering
• Research Institution: University of Yamanashi
• Principal Investigator: ARIMOTO Keisuke 山梨大学, 大学院・医学工学総合研究部, 准教授 (30345699)
• Project Period (FY): 2011 – 2012
• Project Status: Completed (Fiscal Year 2012)
• Budget Amount: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000); Fiscal Year 2012: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000); Fiscal Year 2011: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
• Keywords: 結晶工学 / 結晶成長 / 半導体物性 / シリコン・カーボン混晶 / 歪みシリコン

Research Abstract

Growth conditions appropriate for formation of compressively strained Si/Si1-xCx heterostructure on Si(100) substrate using gas-source molecular beam epitaxy method have been systematically studied. Mechanisms of defect formation and stress relaxation process have been studied, which is essential f or the growth of high quality crystal. P-type MOSFETs with compressively strained Si channel layer were fabricated. Electrical characterization revealed hole mobility improvement in this material system.

Research Products

• [Journal Article] Formation of compressively strained Si/Si1-xCx/Si(100) heterostructures using gas-source molecular beam epitaxy (2013)
  • Author(s): K. Arimoto, H. Furukawa, J. Yamanaka, C. Yamamoto, K. Nakagawa, N. Uasmi, K. Sawano, Y. Shiraki, J. Cryst
  • Journal Title: Growth Volume: 362 Pages: 276-281
  • Peer Reviewed
• [Journal Article] Reflectance anisotropies of compressively strained Si grown on vicinal Si_1-x C_x (001) (2013)
  • Author(s): R. E. Balderas-Navarro, N. A. Ulloa-Castillo, K. Arimoto, G. Ramierz-Melendez, L. F. Lastras-Martinez, H. Furukawa, J. Yamanaka, A. Lastras-Martinez, J. M. Flores-Camacho, N. Usami, D. Stifter, K. Hingerl
  • Journal Title: Appl. Phys. Lett Volume: 102 Pages: 11902-11902
  • Peer Reviewed
• [Journal Article] Gas-source MBE growth of strain-relaxed Si_1-x C_x on Si(100) substrates (2013)
  • Author(s): K. Arimoto, S. Sakai, H.Furukawa, J. Yamanaka, K. Nakagawa, N.Usami, Y. Hoshi, K. Sawano, Y. Shiraki, J. Cryst
  • Journal Title: Growth
  • Peer Reviewed
• [Journal Article] Formation of compressively strained Si/Si1-xCx/Si(100) heterostructures using gas-source molecular beam epitaxy (2013)
  • Author(s): Keisuke Arimoto
  • Journal Title: Journal of Crystal Growth Volume: 362 Pages: 276-281
  • DOI: 10.1016/j.jcrysgro.2011.12.084
  • Peer Reviewed
• [Journal Article] Reflectance anisotropies of compressively strained Si grown on vicinal Si1-xCx(001) (2013)
  • Author(s): R. E. Balderas-Navarro
  • Journal Title: Applied Physics Letters Volume: 102 Issue: 1 Pages: 11902-11902
  • DOI: 10.1063/1.4773560
  • Peer Reviewed
• [Presentation] ガスソース MBE 法による圧縮歪み Si/緩和 Si_1-x C_x /Si ヘテロ構造の形成と構造評価 (2013)
  • Author(s): 古川洋志、酒井翔一朗、有元圭介、山中淳二、中川清和、星裕介、宇佐美徳隆
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学
  • Year and Date: 2013-03-28
• [Presentation] ガスソースMBE法による圧縮歪みSi/緩和Si1-xCx /Siヘテロ構造の形成と構造評価 (2013)
  • Author(s): 有元圭介
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学（神奈川県厚木市）
• [Presentation] Gas-source MBE growth of compressively strained-Si/Si1-xCx/Si(100) heterostructures (2012)
  • Author(s): S. Sakai, H. Furukawa, K. Arimoto, J. Yamanaka, K. Nakagawa, Y. Hoshi, K. Sawano, Y. Shiraki, N. Usami
  • Organizer: The 17th International Conference on Molecular Beam Epitaxy
  • Place of Presentation: 奈良県新公会堂
  • Year and Date: 2012-09-27
• [Presentation] 圧縮歪み Si/Si_1-X C_X /Si(100)ヘテロ構造の形成と評価 (2012)
  • Author(s): 酒井翔一朗、古川洋志、有元圭介、山中淳二、中川清和、宇佐美徳隆、星裕介、澤野憲太郎、白木靖寛
  • Organizer: 第59回応用物理学会春季学術講演会
  • Place of Presentation: 早稲田大学
  • Year and Date: 2012-03-16
• [Presentation] Gas-source MBE growth of compressively strained-Si/Si1-xCx/Si(100) heterostructures (2012)
  • Author(s): Keisuke Arimoto
  • Organizer: The 17th International Conference on Molecular Beam Epitaxy
  • Place of Presentation: 奈良県新公会堂（奈良県奈良市）
• [Presentation] 圧縮歪みSi/Si1-xCx/Si(100)ヘテロ構造の形成と評価 (2012)
  • Author(s): 酒井翔一郎、古川洋志、有元圭介、山中淳二、中川清和、宇佐美徳隆、星裕介、澤野憲太郎、白木靖寛
  • Organizer: 第59回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学
• [Presentation] Formation of Compressively Strained Si/Si1-xCx/Si(100) Heterostructure Using Gas-source MBE (2011)
  • Author(s): H. Furukawa, K. Arimoto, J. Yamanaka, K. Nakagawa, N. Usami, K. Sawano, Y. Shiraki
  • Organizer: The 5th Asian Conference on Crystal Growth and Crystal Technology
  • Place of Presentation: シンガポール
• [Remarks]
  • URL: http://www.inorg.yamanashi.ac.jp/ccst/laboratories/nakagawa-lab
• [Remarks] 中川・有元研究室ホームページ
  • URL: http://www.inorg.yamanashi.ac.jp/ccst/laboratories/nakagawa-lab
• [Remarks]
  • URL: http://erdb.yamanashi.ac.jp/rdb/A_DispInfo.Scholar/4_3_20/CDD495F4347CD50D.html