Studies on defect formation process and electrical properties of Silicon-Carbon strained heterostructures
| Project/Area Number |
23760011
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | University of Yamanashi |
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Principal Investigator |
ARIMOTO Keisuke 山梨大学, 大学院・医学工学総合研究部, 准教授 (30345699)
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| Project Period (FY) |
2011 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2012: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2011: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
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| Keywords | 結晶工学 / 結晶成長 / 半導体物性 / シリコン・カーボン混晶 / 歪みシリコン |
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| Research Abstract |
Growth conditions appropriate for formation of compressively strained Si/Si1-xCx heterostructure on Si(100) substrate using gas-source molecular beam epitaxy method have been systematically studied. Mechanisms of defect formation and stress relaxation process have been studied, which is essential f or the growth of high quality crystal. P-type MOSFETs with compressively strained Si channel layer were fabricated. Electrical characterization revealed hole mobility improvement in this material system.
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Report
(3 results)
Research Products
(15 results)
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[Journal Article] Reflectance anisotropies of compressively strained Si grown on vicinal Si_1-x C_x (001)2013
Author(s)
R. E. Balderas-Navarro, N. A. Ulloa-Castillo, K. Arimoto, G. Ramierz-Melendez, L. F. Lastras-Martinez, H. Furukawa, J. Yamanaka, A. Lastras-Martinez, J. M. Flores-Camacho, N. Usami, D. Stifter, K. Hingerl
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Journal Title
Appl. Phys. Lett
Volume: 102
Pages: 11902-11902
Related Report
Peer Reviewed
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