| Budget Amount *help |
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2013: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2012: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2011: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
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| Research Abstract |
In order to realize high-performance SiC power MOSFETs, defects at the SiC/insulator interface should be reduced greatly. In this study, effects of phosphorus introduction into the interface on the reduction of interface defects and improvement in MOSFET performance were investigated. In addition combination effects of phosphorus with hydrogen or nitrogen were also investigated. The channel mobility was improved by combination of phosphorus and hydrogen. The flatband and threshold voltage shifts were successfully minimized by both methods of combination of phosphorus and nitrogen and localization of phosphorus near the interface. The model of trap distribution in the SiC MOS structure was built from the threshold voltage instability experiments using various bias conditions and temperatures.
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