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Ultrafast wavelength conversion device by semiconductor multilayer coupled cavity with quantum dots

Research Project

Project/Area Number 24360028
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypePartial Multi-year Fund
Section一般
Research Field Applied optics/Quantum optical engineering
Research InstitutionThe University of Tokushima

Principal Investigator

Isu Toshiro  徳島大学, ソシオテクノサイエンス研究部, 特任教授 (00379546)

Co-Investigator(Kenkyū-buntansha) KITADA TAKAHIRO  徳島大学, 大学院ソシオテクノサイエンス研究部, 特任准教授 (90283738)
KUMAGAI NAOTO  徳島大学, 大学院ソシオテクノサイエンス研究部, 特任講師 (40732152)
LU XIANGMENG  徳島大学, 大学院ソシオテクノサイエンス研究部, 特任助教 (80708800)
MORITA KEN  千葉大学, 工学研究科, 准教授 (30448344)
Project Period (FY) 2012-04-01 – 2016-03-31
Project Status Completed (Fiscal Year 2015)
Budget Amount *help
¥18,850,000 (Direct Cost: ¥14,500,000、Indirect Cost: ¥4,350,000)
Fiscal Year 2015: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2014: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2013: ¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2012: ¥5,980,000 (Direct Cost: ¥4,600,000、Indirect Cost: ¥1,380,000)
Keywords量子ドット / 微小共振器 / 超高速光スイッチ / 非線形光学応答 / キャリア緩和 / MBE,エピタキシャル成長 / 化合物半導体多層膜 / 波長変換 / 超高速全光スイッチ / 微笑共振器
Outline of Final Research Achievements

In order to realize an ultrafast wavelength-conversion device, we investigated nonlinear responses of a semiconductor multi-layer triple-coupled cavity with quantum dots (QDs) and crystal growth of the structure. We obtained ultrafast nonlinear transmission change of a cavity with the Er-doped quantum dots embedded in a thin strain-relaxed layer. We also found that the wavelength conversion signal by the four-wave-mixing was absorbed in the QDs, although degenerate four-wave-mixing signals were clearly observed due to saturable absorption. In the case of a triple-coupled cavity with QDs which were transparent for the incident lights, wavelength conversion signals were clearly observed. We confirmed that the triple-coupled cavity structure with QDs was promising for application to ultrafast wavelength-conversion devices.

Report

(5 results)
  • 2015 Annual Research Report   Final Research Report ( PDF )
  • 2014 Annual Research Report
  • 2013 Annual Research Report
  • 2012 Annual Research Report
  • Research Products

    (42 results)

All 2016 2015 2014 2013 2012

All Journal Article (7 results) (of which Peer Reviewed: 7 results,  Acknowledgement Compliant: 1 results) Presentation (35 results) (of which Int'l Joint Research: 2 results)

  • [Journal Article] Suppression of photoluminescence from wetting layer of InAs quantum dots grown on (113)B GaAs with AlAs cap2015

    • Author(s)
      X. M. Lu, S. Matsubara, Y. Nakagawa, T. Kitada, and T. Isu
    • Journal Title

      Journal of Crystal Growth

      Volume: 425 Pages: 106-109

    • DOI

      10.1016/j.jcrysgro.2015.02.074

    • Related Report
      2015 Annual Research Report 2014 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Four-wave mixing in GaAs/AlAs triple-coupled cavity with InAs quantum dots2015

    • Author(s)
      Masanori Ogarane, Yukinori Yasunaga, Yoshinori Nakagawa, Ken Morita, Takahiro Kitada and Toshiro Isu
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 54 Issue: 4S Pages: 04DG05-04DG05

    • DOI

      10.7567/jjap.54.04dg05

    • NAID

      210000145018

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Four-wave mixing in a GaAs/AlAs triple-coupled multilayer cavity for novel ultrafast wavelength conversion devices2014

    • Author(s)
      Takahiro Kitada, Yukinori Yasunaga, Yoshinori Nakagawa, Ken Morita, and Toshiro Isu
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 53 Issue: 4S Pages: 04EG03-04EG03

    • DOI

      10.7567/jjap.53.04eg03

    • NAID

      210000143632

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] GaAa/AlAs multilayer cavity with Er-doped InAs quantum dots embedded in extremely thin strain-relaxed InGaAs barriers for ultrafast all-optical switches2013

    • Author(s)
      Morita K., et al.
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 52 Issue: 4S Pages: 04CG04-04CG04

    • DOI

      10.7567/jjap.52.04cg04

    • Related Report
      2013 Annual Research Report 2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Wavelength conversion via four-wave mixing in a triple-coupled multilayer cavity2013

    • Author(s)
      Takahiro Kitada, Yukinori Yasunaga, Yoshinori Nakagawa, Ken Morita, and Toshiro Isu
    • Journal Title

      Applied Physics Letters

      Volume: 103 Issue: 10

    • DOI

      10.1063/1.4820813

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Ultrafast photocarrier relaxation processes in Er-doped InAs quantum dots embedded in strain-relaxed InGaAs barriers2012

    • Author(s)
      Kitada T., et al.
    • Journal Title

      Journal of Crystal Growth

      Volume: 378 Pages: 485-488

    • DOI

      10.1016/j.jcrysgro.2012.11.005

    • Related Report
      2013 Annual Research Report 2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] GaAs/ AlAs Multilayer Cavity with Er-Doped InAs Quantum Dots Embedded in Strain-Relaxed InGaAs Barriers for Ultrafast All-Optical Switches2012

    • Author(s)
      Hyuga Ueyama, Tomoya Takahashi, Yoshinori Nakagawa, Ken Morita, Takahiro Kitada, Toshiro Isu
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: Vol.51 Issue: 4S Pages: 04DG06-04DG06

    • DOI

      10.1143/jjap.51.04dg06

    • NAID

      210000140532

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Presentation] 超高速波長変換素子に向けたInAs量子ドットを有するGaAs/AlAs多層膜三結合共振器2016

    • Author(s)
      盧翔孟、熊谷直人、北田貴弘、井須俊郎
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学大岡山キャンパス(東京都目黒区)
    • Year and Date
      2016-03-19
    • Related Report
      2015 Annual Research Report
  • [Presentation] (001)と(113)B GaAs 基板上に成長したInAs 量子ドットに対するSb 照射の効果2015

    • Author(s)
      盧翔孟,熊谷直人,北田貴弘,井須俊郎
    • Organizer
      2015年度 第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場(愛知県名古屋市)
    • Year and Date
      2015-09-13
    • Related Report
      2015 Annual Research Report
  • [Presentation] Investigation of Carriers Thermal Transfer in Self-asssembled Quantum Dots Grown on (311)B GaAs by Temperature Dependence Photoluminescence2015

    • Author(s)
      X. M. Lu, A. Kawaguchi, N. Kumagai, T. Kitada, and T. Isu
    • Organizer
      17th International Conference on Modulated Semiconductor Structures(MSS17)
    • Place of Presentation
      仙台国際センター(宮城県仙台市)
    • Year and Date
      2015-07-26
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Temperature dependence photoluminescence of quantum dots grown on (311)B GaAs by molecular beam epitaxy2015

    • Author(s)
      X. M. Lu, A. Kawaguchi, N. Kumagai, T. Kitada, and T. Isu
    • Organizer
      第34回電子材料シンポジウム(EMS-34)
    • Place of Presentation
      ラフォーレ琵琶湖(滋賀県守山市)
    • Year and Date
      2015-07-15
    • Related Report
      2015 Annual Research Report
  • [Presentation] Temperature Dependence Photoluminescence From InAs Quantum Dots With AlAs Cap Grown on (311)B and (100) GaAs Substrate2015

    • Author(s)
      X. M. Lu, A. Kawaguchi, N. Kumagai, T. Kitada, and T. Isu
    • Organizer
      The 42th International Symposium on Compound Semiconductors (ISCS2015)
    • Place of Presentation
      University of California Santa Barbara, CA USA
    • Year and Date
      2015-06-28
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] (113)B GaAs基板上に成長した量子ドットのPLの温度依存性2015

    • Author(s)
      盧翔孟,川口晃弘,熊谷直人,北田貴弘,井須俊郎
    • Organizer
      2015年第62回応用物理学春季学術講演会
    • Place of Presentation
      東海大学湘南キャンパス(神奈川県平塚市)
    • Year and Date
      2015-03-11 – 2015-03-15
    • Related Report
      2014 Annual Research Report
  • [Presentation] AlAsキャップ付InAs量子ドットのフォトルミネツセンスに対するInGaAs層の影響2014

    • Author(s)
      盧翔孟,川口晃弘,中河義典,熊谷直人,北田貴弘,井須俊郎
    • Organizer
      2014年第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学札幌キャンパス(北海道札幌市)
    • Year and Date
      2014-09-17 – 2014-09-20
    • Related Report
      2014 Annual Research Report
  • [Presentation] InAs 量子ドットを有するGaAs/AlAs 多層膜三結合共振器の四光波混合信号測定2014

    • Author(s)
      大柄根斉宣,安長千徳,中河義典,森田健,北田貴弘,井須俊郎
    • Organizer
      2014年第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学札幌キャンパス(北海道札幌市)
    • Year and Date
      2014-09-17 – 2014-09-20
    • Related Report
      2014 Annual Research Report
  • [Presentation] GaAs/AlAs triple-coupled cavity with InAs quantum dots for an ultrafast wavelength conversion device via the four-wave-mixing2014

    • Author(s)
      Masanori Ogarane, Yukinori Yasunaga, Yoshinori Nakagawa, Ken Morita, Takahiro Kitada and Toshiro Isu
    • Organizer
      2014 International Conference on Solid State Devices and Materials (SSDM2014)
    • Place of Presentation
      Tsukuba International Congress Center( 茨城県つくば市)
    • Year and Date
      2014-09-08 – 2014-09-11
    • Related Report
      2014 Annual Research Report
  • [Presentation] Suppression of photoluminescence from wetting layer of InAs quantum dots grown on (113)B GaAs with AlAs cap2014

    • Author(s)
      X. M. Lu, S. Matsubara, Y. Nakagawa, T. Kitada, and T. Isu
    • Organizer
      The 18th International Conference on Molecular Beam Epitaxy(MBE2014)
    • Place of Presentation
      High Country Conference Center ( Flagstaff, Arizona)
    • Year and Date
      2014-09-07 – 2014-09-12
    • Related Report
      2014 Annual Research Report
  • [Presentation] Effects of AlAs cap and InGaAs Layer on optical property of InAs quantum dots grown on (113)B GaAs by molecular beam epitaxy2014

    • Author(s)
      盧翔孟,川口晃弘,中河義典,熊谷直人,北田貴弘,井須俊郎
    • Organizer
      2014年度 応用物理・物理系学会 中国四国支部合同学術講演会
    • Place of Presentation
      島根大学松江キャンパス(島根県松江市)
    • Year and Date
      2014-07-26
    • Related Report
      2014 Annual Research Report
  • [Presentation] GaAs/AlAs triple-coupled cavity with InAs quantum dots for novel ultrafast wavelength conversion devices2014

    • Author(s)
      Masanori Ogarane, Yukinori Yasunaga, Yoshinori Nakagawa, Ken Morita, Takahiro Kitada, and Toshiro Isu
    • Organizer
      第33回電子材料シンポジウム(EMS-33)
    • Place of Presentation
      ラフォーレ修善寺(静岡県伊豆市)
    • Year and Date
      2014-07-09 – 2014-07-11
    • Related Report
      2014 Annual Research Report
  • [Presentation] Reduced wetting layer and enhanced photoluminescence of InAs quantum dots with AlAs cap grown on (113)B GaAs by molecular beam epitaxy2014

    • Author(s)
      X. M. Lu, S. Matsubara, Y. Nakagawa, T. Kitada, and T. Isu
    • Organizer
      第33回電子材料シンポジウム(EMS-33)
    • Place of Presentation
      ラフォーレ修善寺(静岡県伊豆市)
    • Year and Date
      2014-07-09 – 2014-07-11
    • Related Report
      2014 Annual Research Report
  • [Presentation] Enhanced photoluminescence from InAs quantum dots with a thin AlAs cap layer grown on (100) and (311)B GaAs substrate2014

    • Author(s)
      Xiangmeng Lu, Shuzo Matsubara, Takahiro Kitada, and Toshiro Isu
    • Organizer
      The 41th International Symposium on Compound Semiconductors (ISCS2014)
    • Place of Presentation
      Le Corum (Montpellier, France)
    • Year and Date
      2014-05-11 – 2014-05-15
    • Related Report
      2014 Annual Research Report
  • [Presentation] 超高速波長変換素子に向けたInAs 量子ドットを有するGaAs/AlAs 多層膜三結合共振器の作製2014

    • Author(s)
      大柄根斉宣,安長千徳,中河義典,森田健,北田貴弘,井須俊郎
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学相模原キャンパス(神奈川県)
    • Related Report
      2013 Annual Research Report
  • [Presentation] 分子線エピタキシーによる(001)と(113)B GaAs基板上に成長したInAs量子ドットのフォトルミネッセンスに与えるAlAsキャップの影響2014

    • Author(s)
      盧 翔孟,松原修三,中河義典,北田貴弘,井須俊郎
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学相模原キャンパス(神奈川県)
    • Related Report
      2013 Annual Research Report
  • [Presentation] 選択エッチングにより作製したGaAs/Air多層膜共振器構造の反射率面内分布2013

    • Author(s)
      小松秀士, 他.
    • Organizer
      2013年第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川工科大学 (神奈川県)
    • Year and Date
      2013-03-30
    • Related Report
      2012 Annual Research Report
  • [Presentation] Clear observation of cavity mode of GaAs/air multilayer structure2013

    • Author(s)
      Hidetada Komatsu, Yoshinori Nakagawa, Ken Morita, Takahiro Kitada, and Toshiro Isu
    • Organizer
      The 32nd Electronic Materials Symposium
    • Place of Presentation
      ラフォーレ琵琶湖
    • Related Report
      2013 Annual Research Report
  • [Presentation] 微小開口部アレイからの選択エッチングにより作製したGaAs/Air多層膜共振器構造2013

    • Author(s)
      小松秀士,中河義典,森田健,北田貴弘, 井須俊郎
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学京田辺キャンパス(滋賀県)
    • Related Report
      2013 Annual Research Report
  • [Presentation] GaAs/AlAs三結合共振器への波長帯域制限したパルス光照射による四光波混合信号光のスペクトル形状2013

    • Author(s)
      北田貴弘,安長千徳,中河義典,森田健,井須俊郎
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学京田辺キャンパス(滋賀県)
    • Related Report
      2013 Annual Research Report
  • [Presentation] Four-wave mixing in a GaAs/AlAs triple-coupled multilayer cavity for novel ultrafast wavelength conversion devices2013

    • Author(s)
      Takahiro Kitada, Yukinori Yasunaga, Yoshinori Nakagawa, Ken Morita and Toshiro Isu
    • Organizer
      2013 International Conference on Solid State Devices and Materials (SSDM2013)
    • Place of Presentation
      Hilton Fukuoka Sea Hawk Fukuoka(福岡県)
    • Related Report
      2013 Annual Research Report
  • [Presentation] 半導体多層膜結合共振器構造の非線形光学応答とそのデバイス応用2013

    • Author(s)
      井須俊郎,北田貴弘,森田健,盧翔孟,中河義典
    • Organizer
      第9回量子ナノ材料セミナー
    • Place of Presentation
      阿南工業高等専門学校(徳島県)
    • Related Report
      2013 Annual Research Report
  • [Presentation] Molecular Beam Epitaxy of InAs Quantum Dots Embedded in Strain-Relaxed Barriers for Ultrafast Nonlinear Optical Devices2012

    • Author(s)
      Kitada T., at al.
    • Organizer
      Collaborative Conference on Crystal Growth (3CG)
    • Place of Presentation
      Orland, (Florida, USA)(招待講演)
    • Year and Date
      2012-12-11
    • Related Report
      2012 Annual Research Report
  • [Presentation] Novel semiconductor quantum dots for ultrafast nonlinear optical devices2012

    • Author(s)
      Kitada T., at al.
    • Organizer
      International Conference on Emerging Advanced Nanomaterials(ICEAN2012)
    • Place of Presentation
      Mercure Hotel, (Brisbane, Austraria)(招待講演)
    • Year and Date
      2012-10-23
    • Related Report
      2012 Annual Research Report
  • [Presentation] Four-wave mixing signal measurements of GaAs/AlAs multilayer cavity with InAs QDs embedded in strain-relaxed barriers2012

    • Author(s)
      Yasunaga Y, at al.
    • Organizer
      International Conference on Emerging Advanced Nanomaterials(ICEAN2012)
    • Place of Presentation
      Mercure Hotel, (Brisbane, Austraria)
    • Year and Date
      2012-10-23
    • Related Report
      2012 Annual Research Report
  • [Presentation] GaAs/AlAs multilayer cavity with Er-doped InAs quantum dots embedded in extremely thin strain-relaxed InGaAs barriers for ultrafast alloptical switches2012

    • Author(s)
      Morita K., at al.
    • Organizer
      2012 International Conference on Solid State Devices and Materials (SSDM 2012)
    • Place of Presentation
      京都国際会館 (京都府)
    • Year and Date
      2012-09-27
    • Related Report
      2012 Annual Research Report
  • [Presentation] Strongly enhanced four-wave mixing signal from GaAs/AlAs cavity with InAs QDs embedded in strain-relaxed barriers2012

    • Author(s)
      Yasunaga Y, at al.
    • Organizer
      2012 International Conference on Solid State Devices and Materials (SSDM 2012)
    • Place of Presentation
      京都国際会館 (京都府)
    • Year and Date
      2012-09-26
    • Related Report
      2012 Annual Research Report
  • [Presentation] A GaAs/Air multilayer cavity for a planar-type non-linear optical device2012

    • Author(s)
      Komatsu H., at al.
    • Organizer
      2012 International Conference on Solid State Devices and Materials (SSDM 2012)
    • Place of Presentation
      京都国際会館 (京都府)
    • Year and Date
      2012-09-26
    • Related Report
      2012 Annual Research Report
  • [Presentation] Ultrafast photocarrier relaxation processes in Er-doped InAs quantum dots embedded in strain-relaxed InGaAs barriers2012

    • Author(s)
      Kitada T., at al.
    • Organizer
      The 17th International Conference on Molecular Beam Epitaxy (MBE 2012)
    • Place of Presentation
      奈良新公会堂 (奈良県)
    • Year and Date
      2012-09-25
    • Related Report
      2012 Annual Research Report
  • [Presentation] 歪緩和バリア層に埋め込んだEr添加InAs量子ドットにおける超高速キャリア緩和の励起波長依存性2012

    • Author(s)
      北田貴弘, 他.
    • Organizer
      2012年秋季第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学 (愛媛県)
    • Year and Date
      2012-09-11
    • Related Report
      2012 Annual Research Report
  • [Presentation] InAs量子ドット共振器による四光波混合信号の増強2012

    • Author(s)
      安長千徳, 他.
    • Organizer
      応用物理学会学中国四国支部2012年度支部学術講演会
    • Place of Presentation
      山口大学(山口県)
    • Year and Date
      2012-07-28
    • Related Report
      2012 Annual Research Report
  • [Presentation] 選択エッチングにより作製したGaAs/Air多層膜光共振器の反射率スペクトル測定2012

    • Author(s)
      小松秀士, 他.
    • Organizer
      応用物理学会学中国四国支部2012年度支部学術講演会
    • Place of Presentation
      山口大学(山口県)
    • Year and Date
      2012-07-28
    • Related Report
      2012 Annual Research Report
  • [Presentation] 波長変換機能を実現するGaAs/AlAs多層膜三結合共振器の四光波混合信号の時間分解測定2012

    • Author(s)
      安長千徳, 他.
    • Organizer
      2012年秋季第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学 (愛媛県)
    • Year and Date
      2012-07-28
    • Related Report
      2012 Annual Research Report
  • [Presentation] GaAs/Air多層膜共振器を用いた面型非線形光学デバイス2012

    • Author(s)
      小松秀士, 他.
    • Organizer
      2012年秋季第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学 (愛媛県)
    • Year and Date
      2012-07-28
    • Related Report
      2012 Annual Research Report
  • [Presentation] Strongly enhanced four-wave mixing signal from GaAs/AlAs cavity2012

    • Author(s)
      Yasunaga Y., at al.
    • Organizer
      第31回電子材料シンポジウム(EMS-31)
    • Place of Presentation
      ラフォーレ修繕寺(静岡県)
    • Year and Date
      2012-07-13
    • Related Report
      2012 Annual Research Report

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Published: 2012-04-24   Modified: 2019-07-29  

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