Fabrication of vertical strained-Ge MOSFETs by channel-last process and the electrical characterization

• Project/Area Number: 24360120
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Osaka University
• Principal Investigator: SHIMURA Takayoshi 大阪大学, 工学(系)研究科(研究院), 准教授 (90252600)
• Co-Investigator(Renkei-kenkyūsha): WATABABE Heiji 大阪大学, 大学院工学研究科, 教授 (90379115) ; HOSOI Takuji 大阪大学, 大学院工学研究科, 助教 (90452466)
• Project Period (FY): 2012-04-01 – 2015-03-31
• Project Status: Completed (Fiscal Year 2014)
• Budget Amount: ¥18,590,000 (Direct Cost: ¥14,300,000、Indirect Cost: ¥4,290,000); Fiscal Year 2014: ¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000); Fiscal Year 2013: ¥6,240,000 (Direct Cost: ¥4,800,000、Indirect Cost: ¥1,440,000); Fiscal Year 2012: ¥6,890,000 (Direct Cost: ¥5,300,000、Indirect Cost: ¥1,590,000)
• Keywords: 電気・電子材料 / 作成・評価技術 / エピタキシャル成長 / 半導体 / ゲルマニウム / 格子歪み

Outline of Final Research Achievements

We have fabricated Ge wires by liquid-phase epitaxy during rapid thermal annealing. The field effect transistors with the Ge wires exhibited high on/off current ratio under the accumulation mode. Moreover, effective hole mobility of 500 cm2/Vs was obtained, which was almost 1.6 times higher than the reference Si device. Direct band gap shrinkage was also investigated by means of photoluminescence spectroscopy. We observed a significant redshift of direct gap emission amounting to 45 meV for the Ge wire, which was mainly due to a tensile strain of approximately 0.4% induced by rapid crystallization from the Ge melting point.

Research Products

• [Journal Article] Mobility characterization of Ge-on-insulator metal-oxide-semiconductor field-effect transistors with striped Ge channels fabricated by lateral liquid-phase epitaxy (2014)
  • Author(s): T. Hosoi, Y. Suzuki, T. Shimura, and H. Watanabe
  • Journal Title: Appl. Phys. Lett. Volume: 105 Issue: 17 Pages: 173502-173502
  • DOI: 10.1063/1.4900442
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Strain-induced direct band gap shrinkage in local Ge-on-insulator structures fabricated by lateral liquid-phase epitaxy (2014)
  • Author(s): M. Matsue, Y. Yasutake, S. Fukatsu, T. Hosoi, T. Shimura, and H. Watanabe
  • Journal Title: Appl. Phys. Lett Volume: 104 Issue: 3 Pages: 31106-31106
  • DOI: 10.1063/1.4862890
  • Peer Reviewed
• [Journal Article] High-mobility p-channel metal-oxide-semiconductor field-effect transistors on Ge-on-insulator structures fprmed by lateral liquid-phase epitaxy (2012)
  • Author(s): Yuichiro Suzuki
  • Journal Title: Applied Physics Letters Volume: 101 Issue: 20
  • DOI: 10.1063/1.4766917
  • Peer Reviewed
• [Journal Article] Fabrication of High-Quality GOI and SGOI Structures by Rapid Melt Growth Method-Novel Platform for High-Mobility Transistors and Photonic Devices (2012)
  • Author(s): Heiji Watanabe
  • Journal Title: ECS Transaction Volume: 50 Issue: 4 Pages: 261-266
  • DOI: 10.1149/05004.0261ecst
  • Peer Reviewed
• [Presentation] 急速加熱処理により作製したGeSn-on-quartz構造のフォトルミネッセンス測定 (2015)
  • Author(s): 天本 隆史, 冨永 幸平, 梶村 恵子, 細井 卓治, 志村 考功, 渡部 平司
  • Organizer: 第62回応用物理学関係連合講演会
  • Place of Presentation: 東海大学（神奈川県）
  • Year and Date: 2015-03-11 – 2015-03-14
• [Presentation] Fabrication of GeSn-on-insulator Structure by Utilizing Lateral Liquid-Phase Epitaxy (2014)
  • Author(s): T. Hosoi, K. Kajimura, K. Tominaga, T. Shimura, and H. Watanabe
  • Organizer: The 45th IEEE Semiconductor Interface Specialists Conference (SISC)
  • Place of Presentation: San Diego, CA, USA
  • Year and Date: 2014-12-10 – 2014-12-13
• [Presentation] 横方向液相成長法で作製したSi基板上GeSn細線の初期結晶方位とその安定性 (2014)
  • Author(s): 冨永 幸平，梶村 恵子，天本 隆史，細井 卓治，志村 考功，渡部 平司
  • Organizer: 第75回応用物理学関係連合講演会
  • Place of Presentation: 北海道大学（北海道）
  • Year and Date: 2014-09-17 – 2014-09-20
• [Presentation] 横方向液相エピタキシャル成長法により形成したGeSn-on-insulator層の電気特性評価 (2014)
  • Author(s): 梶村 恵子，細井 卓治，志村 考功，渡部 平司
  • Organizer: 第75回応用物理学関係連合講演会
  • Place of Presentation: 北海道大学（北海道）
  • Year and Date: 2014-09-17 – 2014-09-20
• [Presentation] 横方向液相エピタキシャル成長によって作製したGeワイヤのフォトルミネッセンス測定によるバンドギャップ変調評価 (2014)
  • Author(s): 梶村 恵子, 松江 将博, 安武 裕輔, 深津 晋, 細井 卓治, 志村 考功, 渡部 平司
  • Organizer: ゲートスタック研究会 ―材料・プロセス・評価の物理―」(第１９回研究会）
  • Place of Presentation: 静岡県熱海市
• [Presentation] 横方向液相成長法により作製したn型Ge-on-insulator層の直接遷移発光の増強 (2014)
  • Author(s): 梶村 恵子，松江 将博，細井 卓治，志村 考功，渡部 平司
  • Organizer: 2014年春季 第61回応用物理学関係連合講演会
  • Place of Presentation: 神奈川県相模原市
• [Presentation] 横方向液相エピタキシャル成長法によりY2O3層上に形成した局所GOI層の電気特性評価 (2014)
  • Author(s): 梶村 恵子，松江 将博，細井 卓治，志村 考功，渡部 平司
  • Organizer: 2014年春季 第61回応用物理学関係連合講演会
  • Place of Presentation: 神奈川県相模原市
• [Presentation] 横方向液相成長法で作製した局所GeSn-on-insulator層の優先結晶方位 (2014)
  • Author(s): 3.冨永 幸平，松江 将博，細井 卓治，志村 考功，渡部 平司
  • Organizer: 2014年春季 第61回応用物理学関係連合講演会
  • Place of Presentation: 神奈川県相模原市
• [Presentation] 横方向液相成長によって作製したGeSn-on-insulator構造のバンドギャップ変調評価 (2014)
  • Author(s): 4.冨永 幸平，松江 将博，細井 卓治，志村 考功，渡部 平司
  • Organizer: 2014年春季 第61回応用物理学関係連合講演会
  • Place of Presentation: 神奈川県相模原市
• [Presentation] 横方向液相成長により作製したGOIバックゲートトランジスタのキャリア移動度評価 (2013)
  • Author(s): 西川弘晃
  • Organizer: 2013年春季第60回応用物理学関係連合講演会
  • Place of Presentation: 厚木市、神奈川
  • Year and Date: 2013-03-27
• [Presentation] 横方向液相エピタキシャル成長により作製したGOI MOSFETのキャリア移動度評価 (2013)
  • Author(s): 松江将博
  • Organizer: ゲートスタック研究会
  • Place of Presentation: 熱海市、静岡
  • Year and Date: 2013-01-25
• [Presentation] 高移動度Ge CMOSの実現に向けたGeON/Geゲートスタツクのプロセス設計 (2013)
  • Author(s): 箕浦佑也
  • Organizer: ゲートスタック研究会
  • Place of Presentation: 熱海市、静岡
  • Year and Date: 2013-01-25
• [Presentation] Enhanced direct bandgap photoluminescence from local Ge-on-insulator structures fabricated by lateral liquid-phase epitaxy -Material and strain engineering toward CMOS compatible group-IV photonics- (2013)
  • Author(s): M. Matsue, Y. Yasutake, S. Fukatsu, T. Hosoi, T. Shimura, and H. Watanabe
  • Organizer: The 44th IEEE Semiconductor Interface Specialists Conference (SISC)
  • Place of Presentation: Arlington, VA, USA
• [Presentation] Effective Hole Mobility of GOI MOSFET Fabricated by Lateral Liquid-Phase Epitaxiay (2013)
  • Author(s): T. Hosoi, Y. Suzuki, H. Nishikawa, M. Matsue, T. Shimura, and H. Watanabe
  • Organizer: 2013 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (IWDTF2013),
  • Place of Presentation: Tokyo, Japan
• [Presentation] 横方向液相成長によって作製したGOI構造のフォトルミネッセンス測定 (2013)
  • Author(s): 松江 将博，安武 裕輔，深津 晋，細井 卓治，志村 考功，渡部 平司
  • Organizer: 2013年秋季 第74回応用物理学関係連合講演会
  • Place of Presentation: 京都府田辺市
• [Presentation] Implementation of GeON Gate Dielectrics for Dual-Channel Ge CMOS Technology (2012)
  • Author(s): Yuya Minoura
  • Organizer: IEEE Semiconductor Interface Specialists Conference
  • Place of Presentation: San Diego, USA
  • Year and Date: 2012-12-08
• [Presentation] Fabrication of High-quality SiGe-on-Insulator and Ge-on-Insulator Structures by Rapid Melt Growth (2012)
  • Author(s): Takayoshi Shimura
  • Organizer: The International Symposium on Visualization in Joining & Welding Science through Advanced Measurements and Simulation
  • Place of Presentation: Suita, Osaka(招待講演)
  • Year and Date: 2012-11-30
• [Presentation] Fabrication of Ge-on-i nsu1ator structure by lateral liquid-phase epitaxy and its electrical characterization using back-gate transistors (2012)
  • Author(s): Takayoshi Shimura
  • Organizer: The 6th International Symposium on Advanced Science and Technology of Silicon Materials
  • Place of Presentation: Kailua-Kona, USA
  • Year and Date: 2012-11-20
• [Presentation] High-mobility Ge-on-insulator p-channel MOSFETs fabricated by lateral liquid-phase epitaxy (2012)
  • Author(s): 鈴木雄一郎
  • Organizer: 第12回関西コロキアム電子デバイスワークショップ
  • Place of Presentation: 大阪市(招待講演)
  • Year and Date: 2012-10-26
• [Presentation] Fabrication of high-quality GOI and SGOI structures by rapid melt growth method - Novel platform for high-mobility transistors and photonic devices - (2012)
  • Author(s): Heiji Watanabe
  • Organizer: Pacific Rim Meeting on Electrochemical and Solid-state Science
  • Place of Presentation: Kailua-Kona, USA(招待講演)
  • Year and Date: 2012-10-10
• [Presentation] Rapid Melt Growth of Fully Relaxed SiGe Layers with High Ge Concentration on Silicon-on-Insulator Substrates (2012)
  • Author(s): Takayoshi Shimura
  • Organizer: International Union of Materials Research Societies - International Conference on Electronic Materials 2012
  • Place of Presentation: Yokohama, Kanagawa
  • Year and Date: 2012-09-28
• [Presentation] 横方向液相成長により作製したGOI構造のキャリア移動度評価 (2012)
  • Author(s): 鈴木雄一郎
  • Organizer: 2012年秋季第73回応用物理学関係連合講演会
  • Place of Presentation: 松山市、愛媛
  • Year and Date: 2012-09-13