Accurate measurement and statistical analysis of gate leakage current of MOSFETs with atomically flat interface

• Project/Area Number: 24360129
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: Tohoku University
• Principal Investigator: SUGAWA Shigetoshi 東北大学, 工学(系)研究科(研究院), 教授 (70321974)
• Co-Investigator(Renkei-kenkyūsha): KURODA Rihito 東北大学, 大学院工学研究科, 准教授 (40581294)
• Project Period (FY): 2012-04-01 – 2015-03-31
• Project Status: Completed (Fiscal Year 2014)
• Budget Amount: ¥18,980,000 (Direct Cost: ¥14,600,000、Indirect Cost: ¥4,380,000); Fiscal Year 2014: ¥3,380,000 (Direct Cost: ¥2,600,000、Indirect Cost: ¥780,000); Fiscal Year 2013: ¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000); Fiscal Year 2012: ¥12,090,000 (Direct Cost: ¥9,300,000、Indirect Cost: ¥2,790,000)
• Keywords: 電子デバイス・機器 / 電子デバイス・集積回路 / MOSFET / シリコン / リーク電流 / ストレス誘起電流 / 平坦化

Outline of Final Research Achievements

Atomically flattening technology of gate insulator film/Si interface was introduced to a 0.22 um CMOS LSI manufacturing technology. It was clarified that the atomic level flatness is obtained at the interface of miniaturized MOSFET by introducing the Si surface flattening process at a temperature less than 850 C right before gate insulator film formation process step. The array test circuit was fabricated based on the introduced technology. By measuring gate current of over 80000 MOSFETs with gate insulator film thickness of 7.7 nm within 80 sec with 10aA accuracy using the developed high accuracy statistical measurement technology, it was confirmed that the appearance probability of MOSFETs with large gate current is decreased by one order of magnitude in comparison to the conventional MOSFETs of which roughness at the gate insulator film/Si interface is about 1 nm.

Research Products

• [Journal Article] Atomically flattening of Si surface of silicon on insulator and isolation-patterned wafers (2015)
  • Author(s): Tetsuya Goto, Rihito Kuroda, Naoya Akagawa, Tomoyuki Suwa, Akinobu Teramoto, Xiang Li, Toshiki Obara, Daiki Kimoto, Shigetoshi Sugawa, Tadahiro Ohmi, Yutaka Kamata, Yuki Kumagai, and Katsuhiko Shibusawa
  • Journal Title: Japanese Journal of Applied Physics Volume: 54 Issue: 4S Pages: 04DA04-04DA04
  • DOI: 10.7567/jjap.54.04da04
  • NAID: 210000144951
  • Peer Reviewed
• [Journal Article] Analysis of breakdown voltage of area surrounded by multiple trench gaps in 4 kV monolithic isolator for communication network interface (2015)
  • Author(s): Yusuke Takeuchi, Rihito Kuroda and Shigetoshi Sugawa
  • Journal Title: Japanese Journal of Applied Physics Volume: 54 Issue: 4S Pages: 04DB01-04DB01
  • DOI: 10.7567/jjap.54.04db01
  • NAID: 210000144957
  • Peer Reviewed
• [Journal Article] Si image sensors with wide spectral response and high robustness to ultraviolet light exposure (2014)
  • Author(s): Rihito Kuroda and Shigetoshi Sugawa
  • Journal Title: IEICE Electronics Express Volume: 11 Issue: 10 Pages: 20142004-20142004
  • DOI: 10.1587/elex.11.20142004
  • NAID: 130004725750
  • ISSN: 1349-2543
  • Peer Reviewed
• [Journal Article] High Selectivity in Dry Etching of Silicon Nitride over Si Using a Novel Hydrofluorocarbon Etch Gas in a Microwave Excited Plasma for FinFET (2014)
  • Author(s): Y. Nakao, T. Matsuo, A. Teramoto, H. Utsumi, K. Hashimoto, R. Kuroda, Y. Shirai, S. Sugawa, and T. Ohmi
  • Journal Title: ECS Transactions Volume: 61 Issue: 3 Pages: 29-37
  • DOI: 10.1149/06103.0029ecst
  • Peer Reviewed
• [Journal Article] Flattening Technique of (551) Silicon Surface Using Xe/H2 Plasma (2014)
  • Author(s): Tomoyuki Suwa, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi
  • Journal Title: ECS Transactions Volume: 61 Issue: 2 Pages: 401-407
  • DOI: 10.1149/06102.0401ecst
  • Peer Reviewed
• [Journal Article] Amorphous InGaZnO Thin-Film Transistors Prepared by Magnetron Sputtering Using Kr and Xe Instead of Ar (2014)
  • Author(s): Tetsuya Goto, Shigetoshi Sugawa and Tadahiro Ohmi
  • Journal Title: Journal of the Society for Information Volume: 21 Issue: 12 Pages: 517-523
  • DOI: 10.1002/jsid.210
  • Peer Reviewed
• [Journal Article] Stress induced leakage current generated by hot-hole injection (2013)
  • Author(s): Akinobu Teramoto, Hyeonwoo Park, Takuya Inatsuka, Rihito Kuroda, Shigetoshi Sugawa, Tadahiro Ohmi
  • Journal Title: Microelectronic Engineering Volume: 109 Pages: 298-301
  • DOI: 10.1016/j.mee.2013.03.116
  • Peer Reviewed
• [Journal Article] Recovery Characteristic of Anomalous Stress Induced Leakage Current of 5.6nm Oxide Films (2012)
  • Author(s): Takuya Inatsuka
  • Journal Title: Japanese Journal of Applied Physics Volume: 51 Issue: 4S Pages: 04DC02-04DC02
  • DOI: 10.1143/jjap.51.04dc02
  • Peer Reviewed
• [Journal Article] A Simple Test Structure for Evaluating the Variability in Key Characte ristics of a Large Number of MOSFETs (2012)
  • Author(s): Shunichi Watabe
  • Journal Title: IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING Volume: 25 Issue: 2 Pages: 145-154
  • DOI: 10.1109/tsm.2011.2181667
  • Peer Reviewed
• [Journal Article] Electrical Properties of Silicon Nitride Using High Density and Low Plasma Damage PECVD Formed at 4000C (2012)
  • Author(s): Yukihisa Nakao
  • Journal Title: ECS Transactions Volume: 45 Issue: 3 Pages: 421-428
  • DOI: 10.1149/1.3700907
  • Peer Reviewed
• [Journal Article] A Test Circuit for Statistical Evaluation of p-n Junction Leakage Current and Its Noise (2012)
  • Author(s): Kenichi Abe
  • Journal Title: IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING Volume: 25 Pages: 303-309
  • Peer Reviewed
• [Presentation] Analysis of Pixel Gain and Linearity of CMOS Image Sensor using Floating Capacitor Load Readout Operation (2015)
  • Author(s): S. Wakashima, F. Kusuhara, R. Kuroda, S. Sugawa
  • Organizer: IS&T/SPIE Electronic Imaging
  • Place of Presentation: San Francisco, USA
  • Year and Date: 2015-02-08 – 2015-02-12
• [Presentation] Wide spectral response and highly robust Si image sensor technology (2014)
  • Author(s): Rihito Kuroda and Shigetoshi Sugawa
  • Organizer: 2nd Asian Image Sensor and Imaging System Symposium
  • Place of Presentation: 東京工業大学キャンパス・イノベーションセンター（東京都・港区）
  • Year and Date: 2014-12-01 – 2014-12-02
  • Invited
• [Presentation] Atomically Flattening of Si Surface of SOI and Isolation-patterned Wafers (2014)
  • Author(s): T. Goto, R. Kuroda, N. Akagawa, T. Suwa, A. Teramoto, X. Li, S. Sugawa, T. Ohmi, Y. Kumagai, Y. Kamata, and T. Shibusawa
  • Organizer: 2014 International Conference on Solid State Devices and Materials
  • Place of Presentation: つくば国際会議場（茨城県・つくば市）
  • Year and Date: 2014-09-08 – 2014-09-11
• [Presentation] Analysis of the breakdown voltage of an area surrounded by the multi-trench gaps in a 4kV monolithic isolator for a communication network interface (2014)
  • Author(s): Yusuke Takeuchi, Rihito Kuroda and Shigetoshi Sugawa
  • Organizer: 2014 International Conference on Solid State Devices and Materials
  • Place of Presentation: つくば国際会議場（茨城県・つくば市）
  • Year and Date: 2014-09-08 – 2014-09-11
• [Presentation] A Novel Analysis of Oxide Breakdown based on Dynamic Observation using Ultra-High Speed Video Capturing Up to 10,000,000 Frames Per Second (2014)
  • Author(s): Rihito Kuroda, Fan Shao, Daiki Kimoto, Kiichi Furukawa, Hidetake Sugo, Tohru Takeda, Ken Miyauchi, Yasuhisa Tochigi, Akinobu Teramoto and Shigetoshi Sugawa
  • Organizer: 2014 IEEE International Reliability Physics Symposium
  • Place of Presentation: Waikoloa, USA
  • Year and Date: 2014-06-03 – 2014-06-05
• [Presentation] Demonstrating Individual Leakage Path from Random Telegraph Signal of Stress Induced Leakage Current (2014)
  • Author(s): A. Teramoto, T. Inatsuka, T. Obara, N. Akagawa, R. Kuroda, S. Sugawa and T. Ohmi
  • Organizer: 2014 IEEE International Reliability Physics Symposium
  • Place of Presentation: Waikoloa, USA
  • Year and Date: 2014-06-03 – 2014-06-05
• [Presentation] Analyzing Correlation between Multiple Traps in RTN Characteristics (2014)
  • Author(s): Toshiki Obara, Akinobu Teramoto, Akihiro Yonezawa, Rihito Kuroda, Shigetoshi Sugawa, and Tadahiro Ohmi
  • Organizer: Toshiki Obara, Akinobu Teramoto, Akihiro Yonezawa, Rihito Kuroda, Shigetoshi Sugawa, and Tadahiro Ohmi
  • Place of Presentation: Waikoloa, USA
  • Year and Date: 2014-06-03 – 2014-06-05
• [Presentation] Application of Rotation Magnet Sputtering Technology to a-IGZO Film Depositions (2014)
  • Author(s): Tetsuya Goto, Shigetoshi Sugawa, Tadahiro Ohmi
  • Organizer: Society for Information Display, SID International Symposium 2014
  • Place of Presentation: San Diego, USA
  • Year and Date: 2014-06-01 – 2014-06-06
  • Invited
• [Presentation] High Selectivity in a Dry Etching of Silicon Nitride over Si Using a Novel Hydrofluorocarbon Etch Gas in a Microwave Excited Plasma for FinFET (2014)
  • Author(s): Yukihisa Nakao, Takatoshi Matsuo, Akinobu Teramoto, Hidetoshi Utsumi, Keiichi Hashimoto, Rihito Kuroda, Yasuyuki Shirai, Shigetoshi Sugawa, and Tadahiro Ohmi
  • Organizer: 225th Meeting of The Electrochemical Society
  • Place of Presentation: Orlando, USA
  • Year and Date: 2014-05-11 – 2014-05-15
• [Presentation] Flattening Technique of (551) Silicon Surface Using Xe/H2 Plasma (2014)
  • Author(s): Tomoyuki Suwa, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi
  • Organizer: 225th Meeting of The Electrochemical Society
  • Place of Presentation: Orlando, USA
  • Year and Date: 2014-05-11 – 2014-05-15
• [Presentation] Effect of Composition Ratio on Erbium Silicide Work Function on Different Morphology of Si(100) Surface Changed by Alkaline Etching (2014)
  • Author(s): Hiroaki Tanaka, Tomoyuki Suwa, Akinobu Teramoto, Tsukasa Motoya, Shigetoshi Sugawa, and Tadahiro Ohmi
  • Organizer: 225th Meeting of The Electrochemical Society
  • Place of Presentation: Orlando, USA
  • Year and Date: 2014-05-11 – 2014-05-15
• [Presentation] Demonstrating Individual Leakage Path from RTS of SILC (2014)
  • Author(s): A. Teramoto, T. Inatsuka, T. Obara, N. Akagawa, R. Kuroda, S. Sugawa and T. Ohmi
  • Organizer: 2014 IEEE International Reliability Physics Symposium
  • Place of Presentation: Waikoloa, USA
• [Presentation] Stress induced leakage current generated by hot-hole injection(発表確定) (2013)
  • Author(s): Akinobu Teramoto
  • Organizer: 18 th Conference of Insulating Films on Semiconductors
  • Place of Presentation: クラクフ、ポーランド
  • Year and Date: 2013-06-26
• [Presentation] Demonstrating Distribution of SILC Values at Individual Leakage Spots (発表確定) (2013)
  • Author(s): Akinobu Teramoto
  • Organizer: 2013 IEEE International Reliability Physics Symposium
  • Place of Presentation: モントレー、米国
  • Year and Date: 2013-04-17
• [Presentation] Demonstrating Distribution of SILC Values at Individual Leakage Spots (2013)
  • Author(s): Takuya Inatsuka, Rihito Kuroda, Akinobu Teramoto, Yuki Kumagai, Shigetoshi Sugawa, and Tadahiro Ohmi
  • Organizer: IEEE International Reliability Physics Symposium 2013
  • Place of Presentation: Monterey, USA
• [Presentation] High-Speed and Highly Accurate Evaluation of Electrical Characteristics in MOSFETs (2013)
  • Author(s): Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi
  • Organizer: Proceedings of International Conference on IC Design and Technology 2013
  • Place of Presentation: Pavia, Italy
  • Invited
• [Presentation] Stress induced leakage current generated by hot-hole injection (2013)
  • Author(s): A. Teramoto, H.W. Park, T. Inatsuka, R. Kuroda, S. Sugawa, T. Ohmi
  • Organizer: 18th Conference of “Insulating Films on Semiconductors”
  • Place of Presentation: Krakow, Poland
• [Presentation] Impact of Injected Carrier Types to Stress Induced Leakage Current Using Substrate Hot Carrier Injection Stress (2013)
  • Author(s): H. W. Park, A. Teramoto, T. Inatsuka, R. Kuroda, S. Sugawa, and T. Ohmi
  • Organizer: 2013 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices
  • Place of Presentation: Seoul, Korea
• [Presentation] Electrical Properties of Silicon Nitride Using High Density and Low Plasma Damage PECVD Formed at 4000C (2012)
  • Author(s): Yukihisa Nakao
  • Organizer: 221st Meeting of The Electrochemical Society
  • Place of Presentation: シアトル、米国
  • Year and Date: 2012-05-09