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Accurate measurement and statistical analysis of gate leakage current of MOSFETs with atomically flat interface

Research Project

Project/Area Number 24360129
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypePartial Multi-year Fund
Section一般
Research Field Electron device/Electronic equipment
Research InstitutionTohoku University

Principal Investigator

SUGAWA Shigetoshi  東北大学, 工学(系)研究科(研究院), 教授 (70321974)

Co-Investigator(Renkei-kenkyūsha) KURODA Rihito  東北大学, 大学院工学研究科, 准教授 (40581294)
Project Period (FY) 2012-04-01 – 2015-03-31
Project Status Completed (Fiscal Year 2014)
Budget Amount *help
¥18,980,000 (Direct Cost: ¥14,600,000、Indirect Cost: ¥4,380,000)
Fiscal Year 2014: ¥3,380,000 (Direct Cost: ¥2,600,000、Indirect Cost: ¥780,000)
Fiscal Year 2013: ¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000)
Fiscal Year 2012: ¥12,090,000 (Direct Cost: ¥9,300,000、Indirect Cost: ¥2,790,000)
Keywords電子デバイス・機器 / 電子デバイス・集積回路 / MOSFET / シリコン / リーク電流 / ストレス誘起電流 / 平坦化
Outline of Final Research Achievements

Atomically flattening technology of gate insulator film/Si interface was introduced to a 0.22 um CMOS LSI manufacturing technology. It was clarified that the atomic level flatness is obtained at the interface of miniaturized MOSFET by introducing the Si surface flattening process at a temperature less than 850 C right before gate insulator film formation process step. The array test circuit was fabricated based on the introduced technology. By measuring gate current of over 80000 MOSFETs with gate insulator film thickness of 7.7 nm within 80 sec with 10aA accuracy using the developed high accuracy statistical measurement technology, it was confirmed that the appearance probability of MOSFETs with large gate current is decreased by one order of magnitude in comparison to the conventional MOSFETs of which roughness at the gate insulator film/Si interface is about 1 nm.

Report

(4 results)
  • 2014 Annual Research Report   Final Research Report ( PDF )
  • 2013 Annual Research Report
  • 2012 Annual Research Report
  • Research Products

    (30 results)

All 2015 2014 2013 2012

All Journal Article (11 results) (of which Peer Reviewed: 11 results) Presentation (19 results) (of which Invited: 3 results)

  • [Journal Article] Atomically flattening of Si surface of silicon on insulator and isolation-patterned wafers2015

    • Author(s)
      Tetsuya Goto, Rihito Kuroda, Naoya Akagawa, Tomoyuki Suwa, Akinobu Teramoto, Xiang Li, Toshiki Obara, Daiki Kimoto, Shigetoshi Sugawa, Tadahiro Ohmi, Yutaka Kamata, Yuki Kumagai, and Katsuhiko Shibusawa
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 54 Issue: 4S Pages: 04DA04-04DA04

    • DOI

      10.7567/jjap.54.04da04

    • NAID

      210000144951

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Analysis of breakdown voltage of area surrounded by multiple trench gaps in 4 kV monolithic isolator for communication network interface2015

    • Author(s)
      Yusuke Takeuchi, Rihito Kuroda and Shigetoshi Sugawa
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 54 Issue: 4S Pages: 04DB01-04DB01

    • DOI

      10.7567/jjap.54.04db01

    • NAID

      210000144957

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Si image sensors with wide spectral response and high robustness to ultraviolet light exposure2014

    • Author(s)
      Rihito Kuroda and Shigetoshi Sugawa
    • Journal Title

      IEICE Electronics Express

      Volume: 11 Issue: 10 Pages: 20142004-20142004

    • DOI

      10.1587/elex.11.20142004

    • NAID

      130004725750

    • ISSN
      1349-2543
    • Related Report
      2014 Annual Research Report
    • Peer Reviewed
  • [Journal Article] High Selectivity in Dry Etching of Silicon Nitride over Si Using a Novel Hydrofluorocarbon Etch Gas in a Microwave Excited Plasma for FinFET2014

    • Author(s)
      Y. Nakao, T. Matsuo, A. Teramoto, H. Utsumi, K. Hashimoto, R. Kuroda, Y. Shirai, S. Sugawa, and T. Ohmi
    • Journal Title

      ECS Transactions

      Volume: 61 Issue: 3 Pages: 29-37

    • DOI

      10.1149/06103.0029ecst

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Flattening Technique of (551) Silicon Surface Using Xe/H2 Plasma2014

    • Author(s)
      Tomoyuki Suwa, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi
    • Journal Title

      ECS Transactions

      Volume: 61 Issue: 2 Pages: 401-407

    • DOI

      10.1149/06102.0401ecst

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Amorphous InGaZnO Thin-Film Transistors Prepared by Magnetron Sputtering Using Kr and Xe Instead of Ar2014

    • Author(s)
      Tetsuya Goto, Shigetoshi Sugawa and Tadahiro Ohmi
    • Journal Title

      Journal of the Society for Information

      Volume: 21 Issue: 12 Pages: 517-523

    • DOI

      10.1002/jsid.210

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Stress induced leakage current generated by hot-hole injection2013

    • Author(s)
      Akinobu Teramoto, Hyeonwoo Park, Takuya Inatsuka, Rihito Kuroda, Shigetoshi Sugawa, Tadahiro Ohmi
    • Journal Title

      Microelectronic Engineering

      Volume: 109 Pages: 298-301

    • DOI

      10.1016/j.mee.2013.03.116

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Recovery Characteristic of Anomalous Stress Induced Leakage Current of 5.6nm Oxide Films2012

    • Author(s)
      Takuya Inatsuka
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 51 Issue: 4S Pages: 04DC02-04DC02

    • DOI

      10.1143/jjap.51.04dc02

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] A Simple Test Structure for Evaluating the Variability in Key Characte ristics of a Large Number of MOSFETs2012

    • Author(s)
      Shunichi Watabe
    • Journal Title

      IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING

      Volume: 25 Issue: 2 Pages: 145-154

    • DOI

      10.1109/tsm.2011.2181667

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Electrical Properties of Silicon Nitride Using High Density and Low Plasma Damage PECVD Formed at 4000C2012

    • Author(s)
      Yukihisa Nakao
    • Journal Title

      ECS Transactions

      Volume: 45 Issue: 3 Pages: 421-428

    • DOI

      10.1149/1.3700907

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] A Test Circuit for Statistical Evaluation of p-n Junction Leakage Current and Its Noise2012

    • Author(s)
      Kenichi Abe
    • Journal Title

      IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING

      Volume: 25 Pages: 303-309

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Presentation] Analysis of Pixel Gain and Linearity of CMOS Image Sensor using Floating Capacitor Load Readout Operation2015

    • Author(s)
      S. Wakashima, F. Kusuhara, R. Kuroda, S. Sugawa
    • Organizer
      IS&T/SPIE Electronic Imaging
    • Place of Presentation
      San Francisco, USA
    • Year and Date
      2015-02-08 – 2015-02-12
    • Related Report
      2014 Annual Research Report
  • [Presentation] Wide spectral response and highly robust Si image sensor technology2014

    • Author(s)
      Rihito Kuroda and Shigetoshi Sugawa
    • Organizer
      2nd Asian Image Sensor and Imaging System Symposium
    • Place of Presentation
      東京工業大学キャンパス・イノベーションセンター(東京都・港区)
    • Year and Date
      2014-12-01 – 2014-12-02
    • Related Report
      2014 Annual Research Report
    • Invited
  • [Presentation] Atomically Flattening of Si Surface of SOI and Isolation-patterned Wafers2014

    • Author(s)
      T. Goto, R. Kuroda, N. Akagawa, T. Suwa, A. Teramoto, X. Li, S. Sugawa, T. Ohmi, Y. Kumagai, Y. Kamata, and T. Shibusawa
    • Organizer
      2014 International Conference on Solid State Devices and Materials
    • Place of Presentation
      つくば国際会議場(茨城県・つくば市)
    • Year and Date
      2014-09-08 – 2014-09-11
    • Related Report
      2014 Annual Research Report
  • [Presentation] Analysis of the breakdown voltage of an area surrounded by the multi-trench gaps in a 4kV monolithic isolator for a communication network interface2014

    • Author(s)
      Yusuke Takeuchi, Rihito Kuroda and Shigetoshi Sugawa
    • Organizer
      2014 International Conference on Solid State Devices and Materials
    • Place of Presentation
      つくば国際会議場(茨城県・つくば市)
    • Year and Date
      2014-09-08 – 2014-09-11
    • Related Report
      2014 Annual Research Report
  • [Presentation] A Novel Analysis of Oxide Breakdown based on Dynamic Observation using Ultra-High Speed Video Capturing Up to 10,000,000 Frames Per Second2014

    • Author(s)
      Rihito Kuroda, Fan Shao, Daiki Kimoto, Kiichi Furukawa, Hidetake Sugo, Tohru Takeda, Ken Miyauchi, Yasuhisa Tochigi, Akinobu Teramoto and Shigetoshi Sugawa
    • Organizer
      2014 IEEE International Reliability Physics Symposium
    • Place of Presentation
      Waikoloa, USA
    • Year and Date
      2014-06-03 – 2014-06-05
    • Related Report
      2014 Annual Research Report
  • [Presentation] Demonstrating Individual Leakage Path from Random Telegraph Signal of Stress Induced Leakage Current2014

    • Author(s)
      A. Teramoto, T. Inatsuka, T. Obara, N. Akagawa, R. Kuroda, S. Sugawa and T. Ohmi
    • Organizer
      2014 IEEE International Reliability Physics Symposium
    • Place of Presentation
      Waikoloa, USA
    • Year and Date
      2014-06-03 – 2014-06-05
    • Related Report
      2014 Annual Research Report
  • [Presentation] Analyzing Correlation between Multiple Traps in RTN Characteristics2014

    • Author(s)
      Toshiki Obara, Akinobu Teramoto, Akihiro Yonezawa, Rihito Kuroda, Shigetoshi Sugawa, and Tadahiro Ohmi
    • Organizer
      Toshiki Obara, Akinobu Teramoto, Akihiro Yonezawa, Rihito Kuroda, Shigetoshi Sugawa, and Tadahiro Ohmi
    • Place of Presentation
      Waikoloa, USA
    • Year and Date
      2014-06-03 – 2014-06-05
    • Related Report
      2014 Annual Research Report
  • [Presentation] Application of Rotation Magnet Sputtering Technology to a-IGZO Film Depositions2014

    • Author(s)
      Tetsuya Goto, Shigetoshi Sugawa, Tadahiro Ohmi
    • Organizer
      Society for Information Display, SID International Symposium 2014
    • Place of Presentation
      San Diego, USA
    • Year and Date
      2014-06-01 – 2014-06-06
    • Related Report
      2014 Annual Research Report
    • Invited
  • [Presentation] High Selectivity in a Dry Etching of Silicon Nitride over Si Using a Novel Hydrofluorocarbon Etch Gas in a Microwave Excited Plasma for FinFET2014

    • Author(s)
      Yukihisa Nakao, Takatoshi Matsuo, Akinobu Teramoto, Hidetoshi Utsumi, Keiichi Hashimoto, Rihito Kuroda, Yasuyuki Shirai, Shigetoshi Sugawa, and Tadahiro Ohmi
    • Organizer
      225th Meeting of The Electrochemical Society
    • Place of Presentation
      Orlando, USA
    • Year and Date
      2014-05-11 – 2014-05-15
    • Related Report
      2014 Annual Research Report
  • [Presentation] Flattening Technique of (551) Silicon Surface Using Xe/H2 Plasma2014

    • Author(s)
      Tomoyuki Suwa, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi
    • Organizer
      225th Meeting of The Electrochemical Society
    • Place of Presentation
      Orlando, USA
    • Year and Date
      2014-05-11 – 2014-05-15
    • Related Report
      2014 Annual Research Report
  • [Presentation] Effect of Composition Ratio on Erbium Silicide Work Function on Different Morphology of Si(100) Surface Changed by Alkaline Etching2014

    • Author(s)
      Hiroaki Tanaka, Tomoyuki Suwa, Akinobu Teramoto, Tsukasa Motoya, Shigetoshi Sugawa, and Tadahiro Ohmi
    • Organizer
      225th Meeting of The Electrochemical Society
    • Place of Presentation
      Orlando, USA
    • Year and Date
      2014-05-11 – 2014-05-15
    • Related Report
      2014 Annual Research Report
  • [Presentation] Demonstrating Individual Leakage Path from RTS of SILC2014

    • Author(s)
      A. Teramoto, T. Inatsuka, T. Obara, N. Akagawa, R. Kuroda, S. Sugawa and T. Ohmi
    • Organizer
      2014 IEEE International Reliability Physics Symposium
    • Place of Presentation
      Waikoloa, USA
    • Related Report
      2013 Annual Research Report
  • [Presentation] Stress induced leakage current generated by hot-hole injection(発表確定)2013

    • Author(s)
      Akinobu Teramoto
    • Organizer
      18 th Conference of Insulating Films on Semiconductors
    • Place of Presentation
      クラクフ、ポーランド
    • Year and Date
      2013-06-26
    • Related Report
      2012 Annual Research Report
  • [Presentation] Demonstrating Distribution of SILC Values at Individual Leakage Spots (発表確定)2013

    • Author(s)
      Akinobu Teramoto
    • Organizer
      2013 IEEE International Reliability Physics Symposium
    • Place of Presentation
      モントレー、米国
    • Year and Date
      2013-04-17
    • Related Report
      2012 Annual Research Report
  • [Presentation] Demonstrating Distribution of SILC Values at Individual Leakage Spots2013

    • Author(s)
      Takuya Inatsuka, Rihito Kuroda, Akinobu Teramoto, Yuki Kumagai, Shigetoshi Sugawa, and Tadahiro Ohmi
    • Organizer
      IEEE International Reliability Physics Symposium 2013
    • Place of Presentation
      Monterey, USA
    • Related Report
      2013 Annual Research Report
  • [Presentation] High-Speed and Highly Accurate Evaluation of Electrical Characteristics in MOSFETs2013

    • Author(s)
      Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi
    • Organizer
      Proceedings of International Conference on IC Design and Technology 2013
    • Place of Presentation
      Pavia, Italy
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] Stress induced leakage current generated by hot-hole injection2013

    • Author(s)
      A. Teramoto, H.W. Park, T. Inatsuka, R. Kuroda, S. Sugawa, T. Ohmi
    • Organizer
      18th Conference of “Insulating Films on Semiconductors”
    • Place of Presentation
      Krakow, Poland
    • Related Report
      2013 Annual Research Report
  • [Presentation] Impact of Injected Carrier Types to Stress Induced Leakage Current Using Substrate Hot Carrier Injection Stress2013

    • Author(s)
      H. W. Park, A. Teramoto, T. Inatsuka, R. Kuroda, S. Sugawa, and T. Ohmi
    • Organizer
      2013 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices
    • Place of Presentation
      Seoul, Korea
    • Related Report
      2013 Annual Research Report
  • [Presentation] Electrical Properties of Silicon Nitride Using High Density and Low Plasma Damage PECVD Formed at 4000C2012

    • Author(s)
      Yukihisa Nakao
    • Organizer
      221st Meeting of The Electrochemical Society
    • Place of Presentation
      シアトル、米国
    • Year and Date
      2012-05-09
    • Related Report
      2012 Annual Research Report

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Published: 2012-04-24   Modified: 2019-07-29  

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