Current control of graphene channel transistors using semiconductor contacts
| Project/Area Number |
24656204
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Japan Advanced Institute of Science and Technology |
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Principal Investigator |
TOKUMITSU Eisuke 北陸先端科学技術大学院大学, グリーンデバイス研究センター, 教授 (10197882)
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| Project Period (FY) |
2012-04-01 – 2014-03-31
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2013: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Fiscal Year 2012: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
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| Keywords | グラフェン / シリコンカーバイド / トランジスタ / 半導体コンタクト / 単極性動作 / SiC |
|---|
| Research Abstract |
Graphene has attracted much interest for next-generation electronics applications due to its extremely high mobility. However, conventional graphene channel transistors with metal source/drain contacts show ambipolar behavior in their transfer characteristics and on/off drain current ratio is usually low because bandgap of graphene is zero. In this research project, it has been demonstrated that unipolar behavior with high on/off ratio of more than 10^3 can be obtained by using SiC semiconductor source/drain contacts. In particular, improvement of interface properties between graphene and SiC is important to obtain high on/off ratio.
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Report
(3 results)
Research Products
(12 results)
