| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2014: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2013: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Fiscal Year 2012: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
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| Outline of Final Research Achievements |
In this project, we fabricated W encapsulating Si cage cluster (WSin) films on Si surfaces to develop new element technologies for upcoming Si nanoelectronics. The WSin films were 1nm thick very thin semiconductor film. The electron density and the mobility of the WSin film were estimated to be 6.5×1019 cm-3 and of 8.8 cm2/Vs from measurements of two dimensional carrier transport properties. To use WSin films widely in the device fabrication process, we developed a thermal chemical vapor deposition method of WSin films.
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