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Development of SiC-based plasmonic transistors with Schottky source/drain

Research Project

Project/Area Number 24686008
Research Category

Grant-in-Aid for Young Scientists (A)

Allocation TypePartial Multi-year Fund
Research Field Thin film/Surface and interfacial physical properties
Research InstitutionOsaka University

Principal Investigator

HOSOI Takuji  大阪大学, 工学(系)研究科(研究院), 助教 (90452466)

Co-Investigator(Renkei-kenkyūsha) WATANABE Heiji  大阪大学, 工学研究科, 教授 (90379115)
SHIMURA Takayoshi  大阪大学, 工学研究科, 准教授 (90252600)
Project Period (FY) 2012-04-01 – 2015-03-31
Project Status Completed (Fiscal Year 2014)
Budget Amount *help
¥26,780,000 (Direct Cost: ¥20,600,000、Indirect Cost: ¥6,180,000)
Fiscal Year 2014: ¥6,500,000 (Direct Cost: ¥5,000,000、Indirect Cost: ¥1,500,000)
Fiscal Year 2013: ¥6,760,000 (Direct Cost: ¥5,200,000、Indirect Cost: ¥1,560,000)
Fiscal Year 2012: ¥13,520,000 (Direct Cost: ¥10,400,000、Indirect Cost: ¥3,120,000)
KeywordsSiC / パワーデバイス / ゲート絶縁膜 / ショットキー接合 / MOSFET / MOSトランジスタ
Outline of Final Research Achievements

This work aims a development of SiC-based transistors with novel operating principle utilizing transparency of SiC against visible and infrared light. For this purpose, control of Schottky barrier height (SBH) at metal/SiC interface and improvement of MOS interface properties are the technological challenges. Device simulation revealed that SBH smaller than 0.3 eV is required for normal operation of SiC MOSFET with metal source/drain. To obtain such small SBH, we examined Ba electrode which has very low vacuum work function (2-3 eV) compared with electron affinity of SiC (3.6 eV), but instability of Ba layer due to its high reactivity against atmosphere was a serious roadblock. We found that bilayer electrode consisting of thin Ba layer with thick Al capping demonstrated a stable effective work function of 3.1 eV.

Report

(4 results)
  • 2014 Annual Research Report   Final Research Report ( PDF )
  • 2013 Annual Research Report
  • 2012 Annual Research Report
  • Research Products

    (18 results)

All 2015 2014 2013 2012 Other

All Journal Article (6 results) (of which Peer Reviewed: 6 results) Presentation (11 results) (of which Invited: 1 results) Remarks (1 results)

  • [Journal Article] Improved bias-temperature instability characteristics in SiC metal-oxide-semiconductor devices with aluminum oxynitride dielectrics2014

    • Author(s)
      A. Chanthaphan, T. Hosoi, Y. Nakano, T. Nakamura, T. Shimura, and H. Watanabe
    • Journal Title

      Applied Physics Letters

      Volume: 104 Issue: 12 Pages: 122105-122105

    • DOI

      10.1063/1.4870047

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Degradation of SiO2/SiC Interface Properties due to Mobile Ions Intrinsically Generated by High-Temperature Hydrogen Annealing2014

    • Author(s)
      A. Chanthaphan, T. Hosoi, Y. Nakano, T. Nakamura, T. Shimura, and H. Watanabe
    • Journal Title

      Mater. Sci. Forum

      Volume: 778-780 Pages: 541-541

    • DOI

      10.4028/www.scientific.net/msf.778-780.541

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Retarded oxide growth on 4H-SiC(0001) substrates due to sacrificial oxidation2014

    • Author(s)
      細井 卓治、上西 悠介、中野 佑紀、中村 孝、志村 考功、渡部 平司
    • Journal Title

      Materials Science Forum

      Volume: 778-780 Pages: 562-565

    • DOI

      10.4028/www.scientific.net/msf.778-780.562

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Understanding and controlling bias-temperature instability in SiC metal-oxide- semiconductor devices induced by unusual generation of mobile ions2013

    • Author(s)
      チャンタパン・アタウット
    • Journal Title

      Applied Physics Letters

      Volume: 102 Issue: 9 Pages: 93510-93510

    • DOI

      10.1063/1.4794942

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Dielectric Properties of Thermally Grown S102 0n 4H-SiC (0001) Substrates2013

    • Author(s)
      細井卓治
    • Journal Title

      Materials Science Forum

      Volume: 740-742 Pages: 605-608

    • DOI

      10.4028/www.scientific.net/msf.740-742.605

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Novel Approach for Improving Interface Quality of 4H-SiC MOS Devices with UV Irradiation and Subsequent Thermal Annealing2013

    • Author(s)
      渡部平司
    • Journal Title

      Materials Science Forum

      Volume: 740-742 Pages: 741-744

    • DOI

      10.4028/www.scientific.net/msf.740-742.741

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Presentation] NOアニールを施したSiC MOSデバイスのフラットバンド電圧安定性2015

    • Author(s)
      勝 義仁, 細井 卓治, 南園 悠一郎, 木本 恒暢, 志村 考功, 渡部 平司
    • Organizer
      第62回応用物理学関係連合講演会
    • Place of Presentation
      東海大学、平塚市
    • Year and Date
      2015-03-11 – 2015-03-14
    • Related Report
      2014 Annual Research Report
  • [Presentation] Understanding of Bias-Temperature Instability due to Mobile Ions in SiC Metal-Oxide-Semiconductor Devices2015

    • Author(s)
      チャンタパン アタウット, 中野佑紀, 中村 孝, 細井 卓治, 志村 考功, 渡部 平司
    • Organizer
      「ゲートスタック研究会 ―材料・プロセス・評価の物理―」(第20回研究会)
    • Place of Presentation
      東レ研修センター、三島市
    • Year and Date
      2015-01-29 – 2015-01-30
    • Related Report
      2014 Annual Research Report
  • [Presentation] 4H-SiC(0001)面の熱酸化における酸化種と酸化速度の関係2014

    • Author(s)
      永井 大介, 福島 悠太, 勝 義仁, 細井 卓治, 志村 考功, 渡部 平司
    • Organizer
      先進パワー半導体分科会 第1回講演会
    • Place of Presentation
      愛知県産業労働センター、名古屋市
    • Year and Date
      2014-11-19 – 2014-11-20
    • Related Report
      2014 Annual Research Report
  • [Presentation] Synchrotron radiation photoemission spectroscopy study of SiO2/4H-SiC(0001) interfaces with NO annealing2014

    • Author(s)
      細井 卓治, 南園 悠一郎, 木本 恒暢, 吉越 章隆, 寺岡 有殿, 志村 考功, 渡部 平司
    • Organizer
      10th European Conference on Silicon Carbide & Related Materials (ECSCRM-2014)
    • Place of Presentation
      Grenoble, France
    • Year and Date
      2014-09-21 – 2014-09-25
    • Related Report
      2014 Annual Research Report
  • [Presentation] 4H-SiC(0001)面のウェット酸化における水分子の役割2014

    • Author(s)
      永井 大介, 細井 卓治, 志村 考功, 渡部 平司
    • Organizer
      第75回応用物理学関係連合講演会
    • Place of Presentation
      北海道大学、札幌市
    • Year and Date
      2014-09-17 – 2014-09-20
    • Related Report
      2014 Annual Research Report
  • [Presentation] 犠牲酸化処理が熱酸化Si02/4H-S iC(0001)構造に及ぼす影響2013

    • Author(s)
      細井卓治
    • Organizer
      第60回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(神奈川県)
    • Year and Date
      2013-03-28
    • Related Report
      2012 Annual Research Report
  • [Presentation] Impacts of hydrogen annealing induced mobile ions on thermal Si02/SiC interface property2013

    • Author(s)
      アタウット・チャンタパン
    • Organizer
      第60回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(神奈川県)
    • Year and Date
      2013-03-28
    • Related Report
      2012 Annual Research Report
  • [Presentation] Mobile Ions Generated in Thermal Sio_2 on SiC by Hydrogen Passivation and Its Impact on Interface Property2012

    • Author(s)
      細井卓治
    • Organizer
      43rd IEEE Semiconductor Interface Specialists Conference
    • Place of Presentation
      サンディエゴ(米国)
    • Year and Date
      2012-12-06
    • Related Report
      2012 Annual Research Report
  • [Presentation] Electrical and physical properties of SiO2 gate dielectrics grown on 4H-SiC

    • Author(s)
      細井 卓治、上西 悠介、チャンタパン アタウット、池口 大輔、中野 佑紀、中村 孝、志村 考功、渡部 平司
    • Organizer
      The 8th international conference on advanced materials upon the proven concept and continues the tradition of its seven predecessors (THERMEC2013)
    • Place of Presentation
      Las Vegas, NV, USA
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] AlON/SiO2積層ゲート絶縁膜によるSiC MOSデバイスのBTI特性改善

    • Author(s)
      チャンタパン アタウット、中野 佑紀、中村 孝、細井 卓治、志村 考功、渡部 平司
    • Organizer
      SiC及び関連半導体研究 第22回講演会
    • Place of Presentation
      埼玉会館
    • Related Report
      2013 Annual Research Report
  • [Presentation] Diffusivity of Mobile Ions Inherent to Thermal SiO2/SiC Structures in Deposited SiO2 Gate Dielectrics

    • Author(s)
      チャンタパン アタウット、中野 佑紀、中村 孝、細井 卓治、志村 考功、渡部 平司
    • Organizer
      第74回応用物理学関係連合講演会
    • Place of Presentation
      同志社大学
    • Related Report
      2013 Annual Research Report
  • [Remarks]

    • URL

      http://www-asf.mls.eng.osaka-u.ac.jp/index.html

    • Related Report
      2012 Annual Research Report

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Published: 2012-04-24   Modified: 2019-07-29  

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