Preparation of multi functional oxynitride nanowires in high crystallinity
| Project/Area Number |
24750196
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Inorganic industrial materials
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| Research Institution | Hokkaido University |
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Principal Investigator |
MASUBUCHI Yuji 北海道大学, 工学(系)研究科(研究院), 助教 (80466440)
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| Co-Investigator(Renkei-kenkyūsha) |
KIKKAWA Shinichi 北海道大学, 大学院工学研究院, 教授 (10127219)
MOTOHASHI Teruki 北海道大学, 大学院工学研究院, 准教授 (00323840)
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| Project Period (FY) |
2012-04-01 – 2014-03-31
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2013: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2012: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
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| Keywords | 酸窒化物 / ナノワイヤ / 光学特性 |
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| Research Abstract |
In this study, gallium oxynitirde nanowire exhibiting a characteristic UV emission was grown in high crystallinity. 1. Zn doped gallium oxynitride nanowire was obtained through ammonia nitridation of oxide precursors, resulting in improvement in its crystallinity due to a lowering of cation vacancy. 2. Gallium oxinitride nanowire homogeneously doped with 3at% of Zn was prepared by annealing of preformed gallium oxynitride nanowire with ZnO powder in evacuated silica tube. 3. The Ga-Zn oxynitride nanowire showed cathodoluminescence peaking at 3.4 eV and 2.7 eV.
Crystallinity of the oxynitride nanowire was improved by Zn doping to decrease its cation vacancy. Two kinds of CL emission can result from a combination of energy level of Zn-O in gallium oxynitride and stacking disorder in hexagonal wurtzite and zinc blende lattice.
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Report
(3 results)
Research Products
(10 results)
