| Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2013: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2012: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
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| Research Abstract |
We enhanced the Neel temperature TN and blocking temperature TB of magnetoelectric (ME) Cr2O3 film, toward the realization of voltage controlled magnetic recording devices. We found TB can be increased by forming relative angles between spin easy axis direction of Cr2O3 and direction of applied magnetic field. We also demonstrated the control of TN and TB experimentally by making Fe2O3/Cr2O3 hetero-structure, which achieved by multiple effects of both lattice distortions and magnetic correlations between Cr2O3 and Fe2O3 antiferromagnet. Since we succeeded to demonstrate the control of TN and TB individually, enhancement of both TN and TB would be possible.
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