| Project/Area Number |
24760611
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Metal making engineering
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| Research Institution | Tohoku University |
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Principal Investigator |
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| Project Period (FY) |
2012-04-01 – 2014-03-31
|
| Project Status |
Completed (Fiscal Year 2013)
|
| Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2013: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2012: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
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| Keywords | 窒化アルミニウム / 液相成長 / Ga-Alフラックス / 結晶育成 / 窒化アルニミウム |
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| Research Abstract |
AlN is a promising substrate material for AlGaN-based deep UV-LED. Recently, authors investigate an original liquid phase epitaxial growth technique using Ga-Al solution. In this study, it was clarified the role of oxygen in the liquid phase epitaxy technique, and, based on the results, growth mechanism of this technique was discussed. Moreover, we have attempted to grow AlN on nitrided a-plane sapphire template. In consequence, high-quality AlN layer successfully grew using nitrided a-plane sapphire.
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